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Pasiskevicius, ValdasORCID iD iconorcid.org/0000-0002-2508-391X
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Publications (10 of 488) Show all publications
Widarsson, M., Henriksson, M., Mutter, P., Canalias, C., Pasiskevicius, V. & Laurell, F. (2020). High resolution and sensitivity up-conversion mid-infrared photon-counting LIDAR. Applied Optics
Open this publication in new window or tab >>High resolution and sensitivity up-conversion mid-infrared photon-counting LIDAR
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2020 (English)In: Applied Optics, ISSN 1559-128X, E-ISSN 2155-3165Article in journal (Refereed) Published
Abstract [en]

A single-photon-counting mid-infrared LIDAR is presented. 2.4 µm mid-infrared photons were up-converted to 737 nm by intra-cavity mixing in a periodically poled rubidium-doped KTiOPO4 crystal inside a Nd:YVO4 laser. The up-converted photons were detected by a Si single-photon avalanche photodiode (SPAD). A temporal resolution of 42 ps and a dark count rate of 500 Hz were achieved, limited by the SPAD and ambient light leakage. It allowed for detection of two targets separated by only a few millimeters. This technique is easily extendable to longer wavelengths, limited primarily by the nonlinear crystal transparency.

National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-271863 (URN)
Available from: 2020-04-08 Created: 2020-04-08 Last updated: 2020-04-08
Tjörnhammar, S., Maestroni, V., Uždavinys, T. K., Zukauskas, A., Canalias, C., Pasiskevicius, V. & Laurell, F. (2019). Blue light induced infrared absorption and color-center fluorescence in KTP isomorphs. In: Proceedings 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, CLEO/Europe-EQEC 2015: . Paper presented at 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, CLEO/Europe-EQEC 2015; International Congress Centre (ICM)Munich; Germany; 21 June 2015 through 25 June 2015. Optical Society of America
Open this publication in new window or tab >>Blue light induced infrared absorption and color-center fluorescence in KTP isomorphs
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2019 (English)In: Proceedings 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, CLEO/Europe-EQEC 2015, Optical Society of America, 2019Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
Optical Society of America, 2019
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-251855 (URN)2-s2.0-85063818612 (Scopus ID)9781467374750 (ISBN)
Conference
2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, CLEO/Europe-EQEC 2015; International Congress Centre (ICM)Munich; Germany; 21 June 2015 through 25 June 2015
Note

QC 20190528

Available from: 2019-05-28 Created: 2019-05-28 Last updated: 2019-05-28Bibliographically approved
Viotti, A.-L., Laurell, F., Zukauskas, A., Canalias, C. & Pasiskevicius, V. (2019). Coherent phase transfer and pulse compressionat 1.4μm in a backward-wave OPO [Letter to the editor]. Optics Letters, 44(12), 3066-3069
Open this publication in new window or tab >>Coherent phase transfer and pulse compressionat 1.4μm in a backward-wave OPO
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2019 (English)In: Optics Letters, ISSN 0146-9592, E-ISSN 1539-4794, Vol. 44, no 12, p. 3066-3069Article in journal, Letter (Refereed) Published
Abstract [en]

The frequency modulation transfer property of a backward-wave optical parametric oscillator (BWOPO) is investigated in the context of near-IR pulse compression. The maximum transferrable bandwidth from the pump to the forward wave in a BWOPO is determined by the group dispersion mismatch. In comparison, the third-order phase introduced in a single-grating compressor setup is more detrimental to achieve optimum compression of the BWOPO forward wave. Nevertheless, we demonstrate a 220 GHz bandwidth transfer from 800 nm to 1.4 μm, with a compression factor of 115, leading to near-IR pulses as short as 1.3 ps with μJ energy.

National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-252767 (URN)10.1364/OL.44.003066 (DOI)000471636700031 ()31199382 (PubMedID)2-s2.0-85067983411 (Scopus ID)
Note

QC 20190610

Available from: 2019-06-07 Created: 2019-06-07 Last updated: 2020-03-09Bibliographically approved
Viotti, A.-L., Laurell, F., Zukauskas, A., Canalias, C. & Pasiskevicius, V. (2019). Coherent Temporal Phase Transfer in Backward Wave Parametric Oscillator at 1.4 mu m. In: 2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO): . Paper presented at Conference on Lasers and Electro-Optics (CLEO), MAY 05-10, 2019, San Jose, CA. IEEE
Open this publication in new window or tab >>Coherent Temporal Phase Transfer in Backward Wave Parametric Oscillator at 1.4 mu m
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2019 (English)In: 2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), IEEE , 2019Conference paper, Published paper (Refereed)
Abstract [en]

The frequency modulation transfer property of a backward wave optical parametric oscillator is employed to generate compressed near-IR pulses at 1.4 mu m with 1.3ps duration. Limitations to the linear frequency modulation transfer in BWOPO are investigated.

Place, publisher, year, edition, pages
IEEE, 2019
Series
Conference on Lasers and Electro-Optics, ISSN 2160-9020
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-259468 (URN)10.1364/CLEO_SI.2019.SF1H.4 (DOI)000482226303038 ()2-s2.0-85069227937 (Scopus ID)978-1-943580-57-6 (ISBN)
Conference
Conference on Lasers and Electro-Optics (CLEO), MAY 05-10, 2019, San Jose, CA
Note

QC 20190920

Available from: 2019-09-20 Created: 2019-09-20 Last updated: 2020-01-13Bibliographically approved
Viotti, A.-L., Laurell, F., Zukauskas, A., Canalias, C. & Pasiskevicius, V. (2019). Coherent temporal phase transfer in backward wave parametric oscillator at 1.4 µm. In: Optics InfoBase Conference Papers: . Paper presented at CLEO: Science and Innovations, CLEO_SI 2019, 5 May 2019 through 10 May 2019. OSA - The Optical Society
Open this publication in new window or tab >>Coherent temporal phase transfer in backward wave parametric oscillator at 1.4 µm
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2019 (English)In: Optics InfoBase Conference Papers, OSA - The Optical Society , 2019Conference paper, Published paper (Refereed)
Abstract [en]

The frequency modulation transfer property of a backward wave optical parametric oscillator is employed to generate compressed near-IR pulses at 1.4µm with 1.3ps duration. Limitations to the linear frequency modulation transfer in BWOPO are investigated.

Place, publisher, year, edition, pages
OSA - The Optical Society, 2019
Keywords
Chirp modulation, Optical parametric oscillators, Backward waves, Linear frequency modulation, Modulation transfer, Near-IR, Temporal phase, Frequency modulation
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-262475 (URN)10.1364/CLEO_SI.2019.SF1H.4 (DOI)2-s2.0-85068126852 (Scopus ID)9781557528209 (ISBN)
Conference
CLEO: Science and Innovations, CLEO_SI 2019, 5 May 2019 through 10 May 2019
Note

QC 20191016

Available from: 2019-10-16 Created: 2019-10-16 Last updated: 2019-10-16Bibliographically approved
Viotti, A.-L., Mutter, P., Zukauskas, A., Canalias, C. & Pasiskevicius, V. (2019). Degenerate Mirrorless Optical Parametric Oscillator. In: : . Paper presented at CLEO Europe 2019.
Open this publication in new window or tab >>Degenerate Mirrorless Optical Parametric Oscillator
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2019 (English)Conference paper, Oral presentation with published abstract (Refereed)
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-265575 (URN)
Conference
CLEO Europe 2019
Available from: 2019-12-16 Created: 2019-12-16 Last updated: 2019-12-18Bibliographically approved
Strömberg, A., Omanakuttan, G., Mu, T., Natesan, P. V., Tofa, T. S., Bailly, M., . . . Sun, Y.-T. (2019). Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi-Phase-Matching Applications. Physica status solidi. A, Applied research
Open this publication in new window or tab >>Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi-Phase-Matching Applications
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2019 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396XArticle in journal (Refereed) Epub ahead of print
Abstract [en]

Heteroepitaxial growth of orientation‐patterned (OP) GaP (OP‐GaP) on wafer‐bonded OP‐GaAs templates is investigated by low‐pressure hydride vapor phase epitaxy for exploiting the beneficial low two‐photon absorption properties of GaP with the matured processing technologies and higher‐quality substrates afforded by GaAs. First, GaP homoepitaxial selective area growth (SAG) is conducted to investigate the dependence of GaP SAG on precursor flows and temperatures toward achieving a high vertical growth rate and equal lateral growth rate in the [110] and [-110]‐oriented openings. Deteriorated domain fidelity is observed in the heteroepitaxial growth of OP‐GaP on OP‐GaAs due to the enhanced growth rate on domain boundaries by threading dislocations generated by 3.6% lattice matching in GaP/GaAs. The dependence of dislocation dynamics on heteroepitaxial growth conditions of OP‐GaP on OP‐GaAs is studied. High OP‐GaP domain fidelity associated with low threading dislocation density and a growth rate of 57 μm h−1 are obtained by increasing GaCl flow. The properties of heteroepitaxial GaP on semi‐insulating GaAs is studied by terahertz time‐domain spectroscopy in the terahertz range. The outcomes of this work will pave the way to exploit heteroepitaxial OP‐GaP growth on OP‐GaAs for frequency conversion by quasi‐phase‐matching in the mid‐infrared and terahertz regions.

Keywords
heteroepitaxy, hydride vapor phase epitaxy, orientation-patterned GaP, quasi-phase-matching, wafer-bonded orientation-patterned GaAs
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-263074 (URN)10.1002/pssa.201900627 (DOI)000491109100001 ()2-s2.0-85074368712 (Scopus ID)
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20191111

Available from: 2019-10-29 Created: 2019-10-29 Last updated: 2019-11-11Bibliographically approved
Strömberg, A., Omanakuttan, G., Natesan, P. V., Tofa, T. S., Grisard, A., Gérard, B., . . . Sun, Y. T. (2019). Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapour Phase Epitaxy for Quasi-Phase-Matching Applications. In: 2019 compound semiconductor week, csw 2019 - proceedings: . Paper presented at 2019 Compound Semiconductor Week, CSW 2019, 19 May 2019 through 23 May 2019. Institute of Electrical and Electronics Engineers Inc.
Open this publication in new window or tab >>Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapour Phase Epitaxy for Quasi-Phase-Matching Applications
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2019 (English)In: 2019 compound semiconductor week, csw 2019 - proceedings, Institute of Electrical and Electronics Engineers Inc. , 2019Conference paper, Published paper (Refereed)
Abstract [en]

Heteroepitaxial growth of orientation-patterned GaP on patterned GaAs template was developed by using hydride vapor phase epitaxy for quasi-phase-matching applications. We present the growth with well-defined periodic boundaries between (001) and (00 1) GaP domains. The GaP layer on planar GaAs was characterized by terahertz time-domain spectroscopy and the conductivity of GaP (0.16 S cm-1) was obtained in terahertz range.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc., 2019
Keywords
Hydride vapour phase epitaxy, Orientation patterned GaP on GaAs, Terahertz time-domain spectroscopy, Gallium arsenide, Gallium phosphide, Hydrides, Phase matching, Plasmons, Reflectometers, Semiconducting gallium, Spectrophotometers, Terahertz spectroscopy, Vapor phase epitaxy, GaAs, Hydride vapor phase epitaxy, Hydride vapour phase epitaxies, Periodic boundaries, Quasi phase matching, Terahertz range, Terahertz time domain spectroscopy, III-V semiconductors
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-268565 (URN)10.1109/ICIPRM.2019.8819110 (DOI)2-s2.0-85072976556 (Scopus ID)9781728100807 (ISBN)
Conference
2019 Compound Semiconductor Week, CSW 2019, 19 May 2019 through 23 May 2019
Note

QC 20200331

Available from: 2020-03-31 Created: 2020-03-31 Last updated: 2020-03-31Bibliographically approved
Zukauskas, A., Pasiskevicius, V., Laurell, F. & Canalias, C. (2019). Fan-out periodically poled structures in Rb-doped KTiOPO4 for continuously tunable QPM devices. In: Schunemann, PG Schepler, KL (Ed.), NONLINEAR FREQUENCY GENERATION AND CONVERSION: MATERIALS AND DEVICES XVIII. Paper presented at Conference on Nonlinear Frequency Generation and Conversion - Materials and Devices XVIII, FEB 05-07, 2019, San Francisco, CA. SPIE-INT SOC OPTICAL ENGINEERING, Article ID UNSP 109020N.
Open this publication in new window or tab >>Fan-out periodically poled structures in Rb-doped KTiOPO4 for continuously tunable QPM devices
2019 (English)In: NONLINEAR FREQUENCY GENERATION AND CONVERSION: MATERIALS AND DEVICES XVIII / [ed] Schunemann, PG Schepler, KL, SPIE-INT SOC OPTICAL ENGINEERING , 2019, article id UNSP 109020NConference paper, Published paper (Refereed)
Abstract [en]

Since the first demonstration of electric field poling in 1993, the use of quasi-phase matching (QPM) technique has gained wide adoption in a multitude of applications. The QPM field today is dominated mainly by the ferroelectric oxide materials from LiNbO3 (LN) and KTiOPO4 (KTP) families, where QPM structures are implemented by the electric field poling technique. While typical QPM devices have a fixed-period, one-dimensional domain grating design, which is the most straightforward to implement, numerous applications require the ability to continuously tune the wavelength over a wider spectral range. For applications where temperature tuning is not desired, a fan-out QPM grating design may be advantageous. The tuning here is performed by transverse translation of the structure in respect to the pump beam, while keeping the crystal temperature constant. While the implementation of fan-out gratings is reasonably well researched in LN, there is a lack of reliable data for KTP isomorphs. Taking into account the high domain growth anisotropy in KTP, an important factor becomes the angle between the domain walls and the b-axis of the crystal. This angle directly affects the quality and dimensions of the QPM device. However, its upper boundary has not been determined to date. In this work we discuss the prospects and limitations of PPKTP devices with fan-out grating designs. We present a fan-out PPRKTP device, where the transverse fan-out rate is 0.5 mu m/mm. In an OPO configuration pumped by 532 nm such PPRKTP crystal is able to provide continuously tunable radiation between 0.7 -2.2 mu m.

Place, publisher, year, edition, pages
SPIE-INT SOC OPTICAL ENGINEERING, 2019
Series
Proceedings of SPIE, ISSN 0277-786X ; 10902
Keywords
periodic poling, KTP, frequency conversion, fan-out, OPO, parametric devices
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-255236 (URN)10.1117/12.2505623 (DOI)000471820400013 ()2-s2.0-85066756130 (Scopus ID)978-1-5106-2447-4 (ISBN)
Conference
Conference on Nonlinear Frequency Generation and Conversion - Materials and Devices XVIII, FEB 05-07, 2019, San Francisco, CA
Note

QC 20190730

Available from: 2019-07-30 Created: 2019-07-30 Last updated: 2019-08-19Bibliographically approved
Widarsson, M., Henriksson, M., Mutter, P., Canalias, C., Pasiskevicius, V. & Laurell, F. (2019). Mid-Infrared Photon Counting by Intra-Cavity Up-Conversion for LIDAR. In: : . Paper presented at CLEO Europe 2019.
Open this publication in new window or tab >>Mid-Infrared Photon Counting by Intra-Cavity Up-Conversion for LIDAR
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2019 (English)Conference paper, Oral presentation with published abstract (Refereed)
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-265593 (URN)
Conference
CLEO Europe 2019
Available from: 2019-12-18 Created: 2019-12-18 Last updated: 2020-02-18Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-2508-391X

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