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Marcinkevičius, SauliusORCID iD iconorcid.org/0000-0002-4606-4865
Alternative names
Publications (10 of 93) Show all publications
Omanakuttan, G., Martinez Sacristan, O., Marcinkevičius, S., Uzdavinys, T. K., Jimenez, J., Ali, H., . . . Sun, Y.-T. (2019). Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth. Optical Materials Express, 9(3), 1488-1500
Open this publication in new window or tab >>Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth
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2019 (English)In: Optical Materials Express, ISSN 2159-3930, E-ISSN 2159-3930, Vol. 9, no 3, p. 1488-1500Article in journal (Refereed) Published
Abstract [en]

We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Place, publisher, year, edition, pages
OPTICAL SOC AMER, 2019
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-247834 (URN)10.1364/OME.9.001488 (DOI)000460134500051 ()
Note

QC 20190326

Available from: 2019-03-26 Created: 2019-03-26 Last updated: 2019-05-10Bibliographically approved
Marcinkevičius, S., Mensi, M., Ivanov, R., Kuritzky, L. Y., DenBaars, S. P., Nakamura, S. & Speck, J. S. (2018). Multimode scanning near-field photoluminescence spectroscopy of InGaN quantum wells. In: 2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID): . Paper presented at 1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018; Hilton Sandestin Beach Golf Resort and Spa Mirimar Beach; United States; 22 August 2018 through 24 August 2018 (pp. 93-95). IEEE
Open this publication in new window or tab >>Multimode scanning near-field photoluminescence spectroscopy of InGaN quantum wells
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2018 (English)In: 2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID), IEEE , 2018, p. 93-95Conference paper, Published paper (Refereed)
Abstract [en]

Multimode scanning near-field photoluminescence spectroscopy was developed and applied to study carrier localization and dynamics in m-plane InGaN quantum wells. The study showed that localized hole states maintain properties of extended bands, radiative and nonradiative carrier lifetimes are spatially nonuniform, and hole diffusion is anisotropic.

Place, publisher, year, edition, pages
IEEE, 2018
Keywords
InGaN, near-field, localization, recombination, diffusion
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-241348 (URN)000454636400029 ()2-s2.0-85057087653 (Scopus ID)
Conference
1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018; Hilton Sandestin Beach Golf Resort and Spa Mirimar Beach; United States; 22 August 2018 through 24 August 2018
Note

QC 20190118

Available from: 2019-01-18 Created: 2019-01-18 Last updated: 2019-01-18Bibliographically approved
Butte, R., Lahourcade, L., UŽdavinys, T. K., Callsen, G., Mensi, M., Glauser, M., . . . Grandjean, N. (2018). Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations. Applied Physics Letters, 112(3), Article ID 032106.
Open this publication in new window or tab >>Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
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2018 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, no 3, article id 032106Article in journal (Refereed) Published
Abstract [en]

To assess the impact of random alloying on the optical properties of the InGaN alloy, high-quality InxGa1-xN (0 < x < 0.18) epilayers grown on c-plane free-standing GaN substrates are characterized both structurally and optically. The thickness (25-100 nm) was adjusted to keep these layers pseudomorphically strained over the whole range of explored indium content as checked by x-ray diffraction measurements. The evolution of the low temperature optical absorption (OA) edge line-width as a function of absorption energy, and hence the indium content, is analyzed in the framework of the random alloy model. The latter shows that the OA edge linewidth should not markedly increase above an indium content of 4%, varying from 17 meV to 30 meV for 20% indium. The experimental data initially follow the same trend with, however, a deviation from this model for indium contents exceeding only similar to 2%. Complementary room temperature near-field photoluminescence measurements carried out using a scanning near-field optical microscope combined with simultaneous surface morphology mappings reveal spatial disorder due to growth meandering. We conclude that for thick high-quality pseudomorphic InGaN layers, a deviation from pure random alloying occurs due to the interplay between indium incorporation and longer range fluctuations induced by the InGaN step-meandering growth mode.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2018
National Category
Other Materials Engineering
Identifiers
urn:nbn:se:kth:diva-222433 (URN)10.1063/1.5010879 (DOI)000423027300027 ()2-s2.0-85041435015 (Scopus ID)
Note

QC 20180223

Available from: 2018-02-23 Created: 2018-02-23 Last updated: 2018-05-24Bibliographically approved
Ivanov, R., Marcinkevičius, S., Mensi, M. D., Martinez, O., Kuritzky, L. Y., Myers, D. J., . . . Speck, J. S. (2017). Polarization-Resolved Near-Field Spectroscopy of Localized States in m -Plane InxGa1-x N/Ga N Quantum Wells. Physical Review Applied, 7(6)
Open this publication in new window or tab >>Polarization-Resolved Near-Field Spectroscopy of Localized States in m -Plane InxGa1-x N/Ga N Quantum Wells
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2017 (English)In: Physical Review Applied, Vol. 7, no 6Article in journal (Refereed) Published
Abstract [en]

We present a polarization, spectrally, and spatially resolved near-field photoluminescence (PL) measurement technique and apply it to the study of wide m-plane InxGa1-xN/GaN quantum wells grown on on-axis and miscut GaN substrates. It is found that PL originates from localized states; nevertheless, its degree of linear polarization (DLP) is high with little spatial variation. This allows an unambiguous assignment of the localized states to InxGa1-xN composition-related band potential fluctuations. Spatial PL variations, occurring due to morphology features of the on-axis samples, play a secondary role compared to the variations of the alloy composition. The large PL peak wavelength difference for polarizations parallel and perpendicular to the c axis, the weak correlation between the peak PL wavelength and the DLP, and the temperature dependence of the DLP suggest that effective potential variations and the hole mass in the second valence-band level are considerably smaller than that for the first level. DLP maps for the long wavelength PL tails have revealed well-defined regions with a small DLP, which have been attributed to a partial strain relaxation around dislocations.

Place, publisher, year, edition, pages
American Physical Society, 2017
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-214571 (URN)10.1103/PhysRevApplied.7.064033 (DOI)000404555000002 ()2-s2.0-85021732534 (Scopus ID)
Note

QC 20170918

Available from: 2017-09-17 Created: 2017-09-17 Last updated: 2017-09-18Bibliographically approved
Ivanov, R., Marcinkevičius, S., UŽdavinys, T. K., Kuritzky, L. Y., Nakamura, S. & Speck, J. S. (2017). Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells. Applied Physics Letters, 110(3), Article ID 031109.
Open this publication in new window or tab >>Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells
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2017 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 110, no 3, article id 031109Article in journal (Refereed) Published
Abstract [en]

Time-resolved scanning near-field photoluminescence (PL) spectroscopy was applied to map carrier lifetimes in wide m-plane InGaN/GaN quantum wells grown on on-axis and miscut substrates. Both radiative and nonradiative lifetimes were found to be spatially nonuniform. Lifetime variations were smaller for quantum wells grown on miscut, as compared to on-axis substrates. Correlation with surface topography showed that largest deviations of recombination times occur at +c planes of pyramidal hillocks of the on-axis sample. Observed correlation between radiative lifetimes and PL peak wavelength was assigned to a partial electron localization.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2017
Keywords
Photoluminescence spectroscopy, Surface topography, Electron localizations, InGaN quantum wells, InGaN/GaN quantum well, Largest deviation, Non-radiative lifetimes, Radiative lifetime, Scanning near field microscopy, Time-resolved scanning, Semiconductor quantum wells
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-202216 (URN)10.1063/1.4974297 (DOI)000392836900009 ()2-s2.0-85009999442 (Scopus ID)
Note

Funding text: The research at KTH was performed within the frame of Linnaeus Excellence Center for Advanced Optics and Photonics (ADOPT) and was financially supported by the Swedish Energy Agency (Contract No. 36652-1) and the Swedish Research Council (Contract No. 621-2013-4096). The work at UCSB was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC). QC 20170320

Available from: 2017-03-20 Created: 2017-03-20 Last updated: 2018-05-21Bibliographically approved
Marcinkevičius, S., UŽdavinys, T. K., Foronda, H. M., Cohen, D. A., Weisbuch, C. & Speck, J. S. (2016). Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy. Physical Review B. Condensed Matter and Materials Physics, 94(23), Article ID 235205.
Open this publication in new window or tab >>Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy
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2016 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 94, no 23, article id 235205Article in journal (Refereed) Published
Abstract [en]

Time-resolved transmission and reflection measurements were performed for bulk GaN at room temperature to evaluate the energy of the first conduction band satellite valley. The measurements showed clear threshold-like spectra for transmission decay and reflection rise times. The thresholds were associated with the onset of the intervalley electron scattering. Transmission measurements with pump and probe pulses in the near infrared produced an intervalley energy of 0.97±0.02 eV. Ultraviolet pump and infrared probe reflection provided a similar value. Comparison of the threshold energies obtained in these experiments allowed estimating the hole effective mass in the upper valence band to be 1.4m0. Modeling of the reflection transients with rate equations has allowed estimating electron-LO (longitudinal optical) phonon scattering rates and the satellite valley effective mass.

Place, publisher, year, edition, pages
American Physical Society, 2016
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-202864 (URN)10.1103/PhysRevB.94.235205 (DOI)000400687800005 ()2-s2.0-85007564015 (Scopus ID)
Note

QC 20170317

Available from: 2017-03-17 Created: 2017-03-17 Last updated: 2018-05-21Bibliographically approved
Wickramaratne, D., Shen, J.-X., Dreyer, C. E., Engel, M., Marsman, M., Kresse, G., . . . Van de Walle, C. G. (2016). Iron as a source of efficient Shockley-Read-Hall recombination in GaN. Applied Physics Letters, 109(16), Article ID 162107.
Open this publication in new window or tab >>Iron as a source of efficient Shockley-Read-Hall recombination in GaN
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2016 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 109, no 16, article id 162107Article in journal (Refereed) Published
Abstract [en]

Transition metal impurities are known to adversely affect the efficiency of electronic and optoelectronic devices by introducing midgap defect levels that can act as efficient Shockley-Read-Hall centers. Iron impurities in GaN do not follow this pattern: their defect level is close to the conduction band and hence far from midgap. Using hybrid functional first-principles calculations, we uncover the electronic properties of Fe and we demonstrate that its high efficiency as a nonradiative center is due to a recombination cycle involving excited states. Unintentional incorporation of iron impurities at modest concentrations (10(15) cm(-3)) leads to nanosecond nonradiative recombination lifetimes, which can be detrimental for the efficiency of electronic and optoelectronic devices.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2016
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-198977 (URN)10.1063/1.4964831 (DOI)000386933200021 ()2-s2.0-84992436629 (Scopus ID)
Note

QC 20170116

Available from: 2017-01-16 Created: 2016-12-22 Last updated: 2017-11-29Bibliographically approved
Mensi, M., Becerra, D. L., Ivanov, R., Marcinkevičius, S., Nakamura, S., Denbaars, S. P. & Speck, J. S. (2016). Properties of near-field photoluminescence in green emitting single and multiple semipolar (2021) plane InGaN/GaN quantum wells. Optical Materials Express, 6(1), 39-45
Open this publication in new window or tab >>Properties of near-field photoluminescence in green emitting single and multiple semipolar (2021) plane InGaN/GaN quantum wells
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2016 (English)In: Optical Materials Express, ISSN 2159-3930, E-ISSN 2159-3930, Vol. 6, no 1, p. 39-45Article in journal (Refereed) Published
Abstract [en]

Scanning near-field photoluminescence (PL) spectroscopy has been applied to green emitting (2021) plane InGaN/GaN quantum well (QW) structures with 1, 5 and 10 wells to reveal the influence of the number of QWS on PL properties and their spatial variation. The data show no additional broadening or shift of the PL spectra related to the increase of the number of QWs. The QWs in the multiple QW structures are found to be nearly identical and the well width and/or alloy composition fluctuations uncorrelated. In spite that the thickness of the 10 QW structure is over the critical, no PL changes related to a structural relaxation have been detected.

Place, publisher, year, edition, pages
Optical Society of America, 2016
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-181453 (URN)10.1364/OME.6.000039 (DOI)000369242300005 ()2-s2.0-84953455911 (Scopus ID)
Funder
Swedish Energy Agency
Note

QC 20160203. QC 20160304

Available from: 2016-02-03 Created: 2016-02-02 Last updated: 2017-11-30Bibliographically approved
Marcinkevičius, S., Jain, R., Shatalov, M., Gaska, R. & Shur, M. (2016). Scanning near-field optical microscopy of AlGaN epitaxial layers. In: UV and Higher Energy Photonics: From Materials to Applications. Paper presented at Conference on UV and Higher Energy Photonics - From Materials to Applications, AUG 28-31, 2016, San Diego, CA. SPIE - International Society for Optical Engineering, Article ID UNSP 992605.
Open this publication in new window or tab >>Scanning near-field optical microscopy of AlGaN epitaxial layers
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2016 (English)In: UV and Higher Energy Photonics: From Materials to Applications, SPIE - International Society for Optical Engineering, 2016, article id UNSP 992605Conference paper, Published paper (Refereed)
Abstract [en]

Scanning near-field PL spectroscopy was applied to study spatial variations of the emission spectra of AlGaN epilayers with AlN molar fractions between 0.3 and 0.7. Experiments were performed at 300 K with 100 nm spatial resolution. In general, photoluminescence spectra were found to be highly uniform with the peak energy deviation of 2 to 6 meV for different alloy compositions. In the 30% and 42% Al layers, a slightly lower Al content and a higher point defect concentration at the boundaries of growth domains were detected. These features were attributed to the higher mobility of Ga adatoms during growth. The inhomogeneous broadening beyond the random alloy distribution was found negligible for the 30% and 42% Al samples, and about 40 - 50 meV for the layers with a larger Al content.

Place, publisher, year, edition, pages
SPIE - International Society for Optical Engineering, 2016
Series
Proceedings of SPIE, ISSN 0277-786X ; 9926
Keywords
AlGaN, Scanning near-field optical microscopy, SNOM, NSOM, photoluminescence, localization
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-200085 (URN)10.1117/12.2236999 (DOI)000389019200004 ()2-s2.0-85006437631 (Scopus ID)978-1-5106-0243-4 (ISBN)978-1-5106-0244-1 (ISBN)
Conference
Conference on UV and Higher Energy Photonics - From Materials to Applications, AUG 28-31, 2016, San Diego, CA
Note

QC 20170125

Available from: 2017-01-25 Created: 2017-01-20 Last updated: 2017-01-25Bibliographically approved
Gelzinyte, K., Ivanov, R., Marcinkevicius, S., Zhao, Y., Becerra, D. L., Nakamura, S., . . . Speck, J. S. (2015). High spatial uniformity of photoluminescence spectra in semipolar (20(2)over-bar1) plane InGaN/GaN quantum wells. Journal of Applied Physics, 117(2), 023111
Open this publication in new window or tab >>High spatial uniformity of photoluminescence spectra in semipolar (20(2)over-bar1) plane InGaN/GaN quantum wells
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2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 2, p. 023111-Article in journal (Refereed) Published
Abstract [en]

Scanning near-field optical spectroscopy was applied to study spatial variations of emission spectra at room temperature in semipolar (20 (2) over bar1) InxGa(1-x)N/GaN single quantum wells (QWs) for 0:11 <= x <= 0:36. Photoluminescence (PL) was found to be highly uniform, with peak wavelength deviations and peak intensity deviations divided by average values in the range of 6-12 meV and 0.03-0.07, respectively. Near-field maps of PL parameters showed large, similar to 5 to 10 mu m size areas of similar values, as opposed to 100 nm scale variations, often reported for InGaN QWs. The near-field PL spectra were found to broaden with increasing InN molar fraction. In the low In content QWs, the broadening is primarily determined by the random cation distribution, while for larger InN molar fractions 10 nm scale localization sites with increasingly deeper band potentials are suggested as the linewidth broadening cause.

National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-160387 (URN)10.1063/1.4905854 (DOI)000348129300011 ()2-s2.0-84923666851 (Scopus ID)
Funder
Swedish Energy Agency, 36652-1Swedish Research Council, 621-2013-4096
Note

QC 20150226

Available from: 2015-02-26 Created: 2015-02-19 Last updated: 2017-12-04Bibliographically approved
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ORCID iD: ORCID iD iconorcid.org/0000-0002-4606-4865

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