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Lourdudoss, SebastianORCID iD iconorcid.org/0000-0002-0977-2598
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Publications (10 of 151) Show all publications
Omanakuttan, G., Martinez Sacristan, O., Marcinkevičius, S., Uzdavinys, T. K., Jimenez, J., Ali, H., . . . Sun, Y.-T. (2019). Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth. Optical Materials Express, 9(3), 1488-1500
Open this publication in new window or tab >>Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth
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2019 (English)In: Optical Materials Express, ISSN 2159-3930, E-ISSN 2159-3930, Vol. 9, no 3, p. 1488-1500Article in journal (Refereed) Published
Abstract [en]

We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Place, publisher, year, edition, pages
OPTICAL SOC AMER, 2019
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-247834 (URN)10.1364/OME.9.001488 (DOI)000460134500051 ()
Note

QC 20190326

Available from: 2019-03-26 Created: 2019-03-26 Last updated: 2019-03-26Bibliographically approved
Lourdudoss, S., Chen, R. T. & Jagadish, C. (2018). Preface. In: Semiconductors and Semimetals: (pp. ix-xi). Academic Press Inc.
Open this publication in new window or tab >>Preface
2018 (English)In: Semiconductors and Semimetals, Academic Press Inc. , 2018, p. ix-xiChapter in book (Refereed)
Place, publisher, year, edition, pages
Academic Press Inc., 2018
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-247496 (URN)10.1016/S0080-8784(18)30036-X (DOI)2-s2.0-85054383602 (Scopus ID)9780128150993 (ISBN)
Note

QC20190418

Available from: 2019-04-18 Created: 2019-04-18 Last updated: 2019-04-18Bibliographically approved
Pang, X., Ozolins, O., Zhang, L., Schatz, R., Udalcovs, A., Storck, J., . . . Lourdudoss, S. (2017). 4 Gbps PAM-4 and DMT Free Space Transmission using A 4.65-mu m Quantum Cascaded Laser at Room Temperature. In: 43RD EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC 2017): . Paper presented at Chalmers Univ Technol, Gothenburg, SEP 17-21, 2017. IEEE
Open this publication in new window or tab >>4 Gbps PAM-4 and DMT Free Space Transmission using A 4.65-mu m Quantum Cascaded Laser at Room Temperature
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2017 (English)In: 43RD EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC 2017), IEEE , 2017Conference paper, Published paper (Refereed)
Abstract [en]

We experimentally demonstrate 4Gbps PAM-4 and DMT transmissions using a quantum cascaded laser (QCL) emitting at mid-wavelength infrared of 4.65-mu m and a commercial infrared photovoltaic detector. The QCL is directly modulated and operated at room temperature with Peltier Cooling.

Place, publisher, year, edition, pages
IEEE, 2017
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-231674 (URN)000434969300159 ()
Conference
Chalmers Univ Technol, Gothenburg, SEP 17-21, 2017
Note

QC 20180829

Available from: 2018-08-29 Created: 2018-08-29 Last updated: 2018-08-29Bibliographically approved
Pang, X., Ozolins, O., Zhang, L., Schatz, R., Udalcovs, A., Storck, J., . . . Lourdudoss, S. (2017). 4 Gbps PAM-4 and DMT Free Space Transmission using a 4.65-pm Quantum Cascaded Laser at Room Temperature. In: European Conference on Optical Communication, ECOC: . Paper presented at 43rd European Conference on Optical Communication, ECOC 2017, 17 September 2017 through 21 September 2017 (pp. 1-3). Institute of Electrical and Electronics Engineers Inc.
Open this publication in new window or tab >>4 Gbps PAM-4 and DMT Free Space Transmission using a 4.65-pm Quantum Cascaded Laser at Room Temperature
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2017 (English)In: European Conference on Optical Communication, ECOC, Institute of Electrical and Electronics Engineers Inc. , 2017, p. 1-3Conference paper, Published paper (Refereed)
Abstract [en]

We experimentally demonstrate 4Gbps PAM-4 and DMT transmissions using a quantum cascaded laser (QCL) emitting at mid-wavelength infrared of 4.65μm and a commercial infrared photovoltaic detector. The QCL is directly modulated and operated at room temperature with Peltier Cooling. 

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc., 2017
Keywords
Infrared radiation, Pulse amplitude modulation, Directly modulated, Free-space transmission, Infrared photovoltaic, Mid-wavelength infrared, Peltier cooling, Quantum-cascaded lasers, Optical communication
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-236778 (URN)10.1109/ECOC.2017.8345985 (DOI)2-s2.0-85046954943 (Scopus ID)9781538656242 (ISBN)
Conference
43rd European Conference on Optical Communication, ECOC 2017, 17 September 2017 through 21 September 2017
Funder
Swedish Research CouncilKnut and Alice Wallenberg Foundation
Note

QC 20190109

Available from: 2019-01-09 Created: 2019-01-09 Last updated: 2019-01-09Bibliographically approved
Omanakuttan, G., Stergiakis, S., Sahgal, A., Sychugov, I., Lourdudoss, S. & Sun, Y.-T. (2017). Epitaxial lateral overgrowth of GaxIn1-xP toward direct GaxIn1-xP/Si heterojunction. Physica Status Solidi (a) applications and materials science, 214(3)
Open this publication in new window or tab >>Epitaxial lateral overgrowth of GaxIn1-xP toward direct GaxIn1-xP/Si heterojunction
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2017 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 214, no 3Article in journal (Refereed) Published
Abstract [en]

The growth of GaInP by hydride vapor phase epitaxy (HVPE) was studied on planar GaAs, patterned GaAs for epitaxial lateral overgrowth (ELOG), and InP/Si seed templates for corrugated epitaxial lateral overgrowth (CELOG). First results on the growth of direct GaInP/Si heterojunction by CELOG is presented. The properties of GaxIn(1-x)P layer and their dependence on the process parameters were investigated by X-ray diffraction, including reciprocal lattice mapping (XRD-RLM), scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy (SEM-EDS), photoluminescence (PL), and Raman spectroscopy. The fluctuation of Ga composition in the GaxIn(1-x)P layer was observed on planar substrate, and the strain caused by the composition variation is retained until relaxation occurs. Fully relaxed GaInP layers were obtained by ELOG and CELOG. Raman spectroscopy reveals that there is a certain amount of ordering in all of the layers except those grown at high temperatures. Orientation dependent Ga incorporation in the CELOG, but not in the ELOG GaxIn(1-x)P layer, and Si incorporation in the vicinity of direct GaxIn(1-x)P/Si heterojunction from CELOG are observed in the SEM-EDS analyses. The high optical quality of direct GaInP/Si heterojunction was observed by cross-sectional micro-PL mapping and the defect reduction effect of CELOG was revealed by high PL intensity in GaInP above Si.

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH, 2017
Keywords
III-V semiconductors, epitaxial lateral overgrowth, GaInP, heterojunctions, silicon
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-205518 (URN)10.1002/pssa.201600631 (DOI)000397577000029 ()2-s2.0-85013663617 (Scopus ID)
Note

QC 20170509

Available from: 2017-05-09 Created: 2017-05-09 Last updated: 2017-06-30Bibliographically approved
Lourdudoss, S., Junesand, C., Kataria, H., Metaferia, W., Omanakuttan, G., Sun, Y.-T., . . . Olsson, F. (2017). Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications. In: Eldada, LA Lee, EH He, S (Ed.), SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XIX: . Paper presented at Conference on Smart Photonic and Optoelectronic Integrated Circuits XIX, JAN 31-FEB 02, 2017, San Francisco, CA. , Article ID UNSP 1010705.
Open this publication in new window or tab >>Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications
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2017 (English)In: SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XIX / [ed] Eldada, LA Lee, EH He, S, 2017, article id UNSP 1010705Conference paper, Published paper (Refereed)
Abstract [en]

We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.

Series
Proceedings of SPIE, ISSN 0277-786X ; 10107
Keywords
Monolithic integration of III-Vs on Si, Photonic integration, Mulitjunction solar cells on silicon, Epitaxial lateral overgrowth, ELOG, Corrugated epitaxial lateral overgrowth, CELOG, III-V on Si, Heterogeneous integration, Silicon photonics
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-211635 (URN)10.1117/12.2255607 (DOI)000405600400002 ()2-s2.0-85019589393 (Scopus ID)978-1-5106-0655-5 (ISBN)978-1-5106-0656-2 (ISBN)
Conference
Conference on Smart Photonic and Optoelectronic Integrated Circuits XIX, JAN 31-FEB 02, 2017, San Francisco, CA
Funder
Swedish Research CouncilSwedish Energy AgencyVINNOVA
Available from: 2017-08-09 Created: 2017-08-09 Last updated: 2017-08-09Bibliographically approved
Liang, Y., Peretti, R., Liverini, V., Süess, M. J., Vigneron, P.-B. -., Wolf, J. M., . . . Faist, J. (2016). Buried heterostructure photonic crystal quantum cascade laser: Towards 2D large-area single-mode operation. In: Optics InfoBase Conference Papers: . Paper presented at Laser Applications to Chemical, Security and Environmental Analysis, LACSEA 2016, 25 July 2016 through 28 July 2016. OSA - The Optical Society
Open this publication in new window or tab >>Buried heterostructure photonic crystal quantum cascade laser: Towards 2D large-area single-mode operation
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2016 (English)In: Optics InfoBase Conference Papers, OSA - The Optical Society , 2016Conference paper, Published paper (Refereed)
Abstract [en]

We demonstrate a buried-heterostructure photonic-crystal quantum cascade laser operating at room temperature. The large-area coherent lasing enabled an output peak power of 0.88 W at 263 K with single-mode behavior and narrow far field pattern.

Place, publisher, year, edition, pages
OSA - The Optical Society, 2016
Keywords
Chemical analysis, Laser applications, Photonic crystals, Semiconductor lasers, Buried heterostructures, Narrow far fields, Output peak power, Single mode, Single mode operation, Quantum cascade lasers
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-207496 (URN)10.1364/LACSEA.2016.LTh3E.2 (DOI)2-s2.0-85019517874 (Scopus ID)9781943580156 (ISBN)
Conference
Laser Applications to Chemical, Security and Environmental Analysis, LACSEA 2016, 25 July 2016 through 28 July 2016
Note

Conference code: 134228; Export Date: 22 May 2017; Conference Paper; Correspondence Address: Liang, Y.; Institute for Quantum Electronics, ETH ZürichSwitzerland; email: liangyo@phys.ethz.ch. QC 20170607

Available from: 2017-06-07 Created: 2017-06-07 Last updated: 2017-11-13Bibliographically approved
Omanakuttan, G., Stergiakis, S., Sahgal, A., Sychugov, I., Lourdudoss, S. & Sun, Y.-T. (2016). Epitaxial lateral overgrowth of GaxIn1-xP towards coherent GaxIn1-xP/Si heterojunction by hydride vapor phase epitaxy. In: 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016: . Paper presented at 2016 Compound Semiconductor Week, CSW 2016, 26 June 2016 through 30 June 2016. IEEE
Open this publication in new window or tab >>Epitaxial lateral overgrowth of GaxIn1-xP towards coherent GaxIn1-xP/Si heterojunction by hydride vapor phase epitaxy
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2016 (English)In: 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, IEEE, 2016Conference paper, Published paper (Refereed)
Abstract [en]

Epitaxial lateral overgrowth (ELOG) of GaInP on GaAs by hydride vapor phase epitaxy (HVPE) is carried out as a pre-study to obtain GaInP/Si heterointerface. We present first results on the growth of GaInP/Si by a modified ELOG technique, corrugated epitaxial lateral overgrowth (CELOG).

Place, publisher, year, edition, pages
IEEE, 2016
Keywords
corrugated epitaxial lateral overgrowth, epitaxial lateral overgrowth, III-V/Si heterojunction solar cells, Heterojunctions, Hydrides, Semiconducting indium, Vapor phase epitaxy, Hetero interfaces, Heterojunction solar cells, Hydride vapor phase epitaxy, Epitaxial growth
National Category
Metallurgy and Metallic Materials
Identifiers
urn:nbn:se:kth:diva-202175 (URN)10.1109/ICIPRM.2016.7528828 (DOI)2-s2.0-84992035477 (Scopus ID)9781509019649 (ISBN)
Conference
2016 Compound Semiconductor Week, CSW 2016, 26 June 2016 through 30 June 2016
Note

QC 20170307

Available from: 2017-03-07 Created: 2017-03-07 Last updated: 2017-06-15Bibliographically approved
Lourdudoss, S. (2016). Heteroepitaxy of InP on Si for photonic and photovoltaic applications. In: 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS): . Paper presented at 28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), JUN 26-30, 2016, Toyama, JAPAN. IEEE
Open this publication in new window or tab >>Heteroepitaxy of InP on Si for photonic and photovoltaic applications
2016 (English)In: 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), IEEE, 2016Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
IEEE, 2016
National Category
Materials Engineering
Identifiers
urn:nbn:se:kth:diva-202474 (URN)10.1109/ICIPRM.2016.7528822 (DOI)000392285400305 ()978-1-5090-1964-9 (ISBN)
Conference
28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), JUN 26-30, 2016, Toyama, JAPAN
Note

QC 20170302

Available from: 2017-03-02 Created: 2017-03-02 Last updated: 2017-03-02Bibliographically approved
Peretti, R., Liverini, V., Süess, M. J., Liang, Y., Vigneron, P. B., Wolf, J. M., . . . Faist, J. (2016). Room temperature operation of a deep etched buried heterostructure photonic crystal quantum cascade laser. Laser & Photonics reviews, 10(5), 843-848
Open this publication in new window or tab >>Room temperature operation of a deep etched buried heterostructure photonic crystal quantum cascade laser
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2016 (English)In: Laser & Photonics reviews, ISSN 1863-8880, E-ISSN 1863-8899, Vol. 10, no 5, p. 843-848Article in journal (Refereed) Published
Abstract [en]

High power single mode quantum cascade lasers with a narrow far field are important for several applications including surgery or military countermeasure. Existing technologies suffer from drawbacks such as operation temperature and scalability. In this paper we introduce a fabrication approach that potentially solves simultaneously these remaining limitations. We demonstrate and characterize deep etched, buried photonic crystal quantum cascade lasers emitting around a wavelength of 8.5 μm. The active region was dry etched before being regrown with semi-insulating Fe:InP. This fabrication strategy results in a refractive index contrast of 10% allowing good photonic mode control, and simultaneously provides good thermal extraction during operation. Single mode emission with narrow far field pattern and peak powers up to 0.88 W at 263 K were recorded from the facet of the photonic crystal laser, and lasing operation was maintained up to room temperature. The lasing modes emitted from square photonic crystal mesas with a side length of 550μm, were identified as slow Bloch photonic crystal modes by means of three-dimensional photonic simulations and measurements. (Figure presented.).

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2016
Keywords
Mid infrared, photonic crystal, single mode, quantum cascade laser, Laser optics, Military applications, Military electronic countermeasures, Photonic crystals, Refractive index, Semiconductor lasers, Buried heterostructures, Fabrication strategies, Operation temperature, Photonic crystal laser, Room-temperature operation, Simulations and measurements, Single mode, Single mode emission, Quantum cascade lasers
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-194897 (URN)10.1002/lpor.201600047 (DOI)000384675200012 ()2-s2.0-84985906096 (Scopus ID)
Note

QC 20161207

Available from: 2016-12-07 Created: 2016-11-01 Last updated: 2017-11-29Bibliographically approved
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ORCID iD: ORCID iD iconorcid.org/0000-0002-0977-2598

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