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Lourdudoss, SebastianORCID iD iconorcid.org/0000-0002-0977-2598
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Publications (10 of 148) Show all publications
Pang, X., Ozolins, O., Zhang, L., Schatz, R., Udalcovs, A., Storck, J., . . . Lourdudoss, S. (2017). 4 Gbps PAM-4 and DMT Free Space Transmission using A 4.65-mu m Quantum Cascaded Laser at Room Temperature. In: 43RD EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC 2017): . Paper presented at Chalmers Univ Technol, Gothenburg, SEP 17-21, 2017. IEEE
Open this publication in new window or tab >>4 Gbps PAM-4 and DMT Free Space Transmission using A 4.65-mu m Quantum Cascaded Laser at Room Temperature
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2017 (English)In: 43RD EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC 2017), IEEE , 2017Conference paper, Published paper (Refereed)
Abstract [en]

We experimentally demonstrate 4Gbps PAM-4 and DMT transmissions using a quantum cascaded laser (QCL) emitting at mid-wavelength infrared of 4.65-mu m and a commercial infrared photovoltaic detector. The QCL is directly modulated and operated at room temperature with Peltier Cooling.

Place, publisher, year, edition, pages
IEEE, 2017
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-231674 (URN)000434969300159 ()
Conference
Chalmers Univ Technol, Gothenburg, SEP 17-21, 2017
Note

QC 20180829

Available from: 2018-08-29 Created: 2018-08-29 Last updated: 2018-08-29Bibliographically approved
Omanakuttan, G., Stergiakis, S., Sahgal, A., Sychugov, I., Lourdudoss, S. & Sun, Y.-T. (2017). Epitaxial lateral overgrowth of GaxIn1-xP toward direct GaxIn1-xP/Si heterojunction. Physica Status Solidi (a) applications and materials science, 214(3)
Open this publication in new window or tab >>Epitaxial lateral overgrowth of GaxIn1-xP toward direct GaxIn1-xP/Si heterojunction
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2017 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 214, no 3Article in journal (Refereed) Published
Abstract [en]

The growth of GaInP by hydride vapor phase epitaxy (HVPE) was studied on planar GaAs, patterned GaAs for epitaxial lateral overgrowth (ELOG), and InP/Si seed templates for corrugated epitaxial lateral overgrowth (CELOG). First results on the growth of direct GaInP/Si heterojunction by CELOG is presented. The properties of GaxIn(1-x)P layer and their dependence on the process parameters were investigated by X-ray diffraction, including reciprocal lattice mapping (XRD-RLM), scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy (SEM-EDS), photoluminescence (PL), and Raman spectroscopy. The fluctuation of Ga composition in the GaxIn(1-x)P layer was observed on planar substrate, and the strain caused by the composition variation is retained until relaxation occurs. Fully relaxed GaInP layers were obtained by ELOG and CELOG. Raman spectroscopy reveals that there is a certain amount of ordering in all of the layers except those grown at high temperatures. Orientation dependent Ga incorporation in the CELOG, but not in the ELOG GaxIn(1-x)P layer, and Si incorporation in the vicinity of direct GaxIn(1-x)P/Si heterojunction from CELOG are observed in the SEM-EDS analyses. The high optical quality of direct GaInP/Si heterojunction was observed by cross-sectional micro-PL mapping and the defect reduction effect of CELOG was revealed by high PL intensity in GaInP above Si.

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH, 2017
Keywords
III-V semiconductors, epitaxial lateral overgrowth, GaInP, heterojunctions, silicon
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-205518 (URN)10.1002/pssa.201600631 (DOI)000397577000029 ()2-s2.0-85013663617 (Scopus ID)
Note

QC 20170509

Available from: 2017-05-09 Created: 2017-05-09 Last updated: 2017-06-30Bibliographically approved
Lourdudoss, S., Junesand, C., Kataria, H., Metaferia, W., Omanakuttan, G., Sun, Y.-T., . . . Olsson, F. (2017). Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications. In: Eldada, LA Lee, EH He, S (Ed.), SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XIX: . Paper presented at Conference on Smart Photonic and Optoelectronic Integrated Circuits XIX, JAN 31-FEB 02, 2017, San Francisco, CA. , Article ID UNSP 1010705.
Open this publication in new window or tab >>Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications
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2017 (English)In: SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XIX / [ed] Eldada, LA Lee, EH He, S, 2017, article id UNSP 1010705Conference paper, Published paper (Refereed)
Abstract [en]

We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.

Series
Proceedings of SPIE, ISSN 0277-786X ; 10107
Keywords
Monolithic integration of III-Vs on Si, Photonic integration, Mulitjunction solar cells on silicon, Epitaxial lateral overgrowth, ELOG, Corrugated epitaxial lateral overgrowth, CELOG, III-V on Si, Heterogeneous integration, Silicon photonics
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-211635 (URN)10.1117/12.2255607 (DOI)000405600400002 ()2-s2.0-85019589393 (Scopus ID)978-1-5106-0655-5 (ISBN)978-1-5106-0656-2 (ISBN)
Conference
Conference on Smart Photonic and Optoelectronic Integrated Circuits XIX, JAN 31-FEB 02, 2017, San Francisco, CA
Funder
Swedish Research CouncilSwedish Energy AgencyVINNOVA
Available from: 2017-08-09 Created: 2017-08-09 Last updated: 2017-08-09Bibliographically approved
Liang, Y., Peretti, R., Liverini, V., Süess, M. J., Vigneron, P.-B. -., Wolf, J. M., . . . Faist, J. (2016). Buried heterostructure photonic crystal quantum cascade laser: Towards 2D large-area single-mode operation. In: Optics InfoBase Conference Papers: . Paper presented at Laser Applications to Chemical, Security and Environmental Analysis, LACSEA 2016, 25 July 2016 through 28 July 2016. OSA - The Optical Society
Open this publication in new window or tab >>Buried heterostructure photonic crystal quantum cascade laser: Towards 2D large-area single-mode operation
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2016 (English)In: Optics InfoBase Conference Papers, OSA - The Optical Society , 2016Conference paper, Published paper (Refereed)
Abstract [en]

We demonstrate a buried-heterostructure photonic-crystal quantum cascade laser operating at room temperature. The large-area coherent lasing enabled an output peak power of 0.88 W at 263 K with single-mode behavior and narrow far field pattern.

Place, publisher, year, edition, pages
OSA - The Optical Society, 2016
Keywords
Chemical analysis, Laser applications, Photonic crystals, Semiconductor lasers, Buried heterostructures, Narrow far fields, Output peak power, Single mode, Single mode operation, Quantum cascade lasers
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-207496 (URN)10.1364/LACSEA.2016.LTh3E.2 (DOI)2-s2.0-85019517874 (Scopus ID)9781943580156 (ISBN)
Conference
Laser Applications to Chemical, Security and Environmental Analysis, LACSEA 2016, 25 July 2016 through 28 July 2016
Note

Conference code: 134228; Export Date: 22 May 2017; Conference Paper; Correspondence Address: Liang, Y.; Institute for Quantum Electronics, ETH ZürichSwitzerland; email: liangyo@phys.ethz.ch. QC 20170607

Available from: 2017-06-07 Created: 2017-06-07 Last updated: 2017-11-13Bibliographically approved
Omanakuttan, G., Stergiakis, S., Sahgal, A., Sychugov, I., Lourdudoss, S. & Sun, Y.-T. (2016). Epitaxial lateral overgrowth of GaxIn1-xP towards coherent GaxIn1-xP/Si heterojunction by hydride vapor phase epitaxy. In: 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016: . Paper presented at 2016 Compound Semiconductor Week, CSW 2016, 26 June 2016 through 30 June 2016. IEEE
Open this publication in new window or tab >>Epitaxial lateral overgrowth of GaxIn1-xP towards coherent GaxIn1-xP/Si heterojunction by hydride vapor phase epitaxy
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2016 (English)In: 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, IEEE, 2016Conference paper, Published paper (Refereed)
Abstract [en]

Epitaxial lateral overgrowth (ELOG) of GaInP on GaAs by hydride vapor phase epitaxy (HVPE) is carried out as a pre-study to obtain GaInP/Si heterointerface. We present first results on the growth of GaInP/Si by a modified ELOG technique, corrugated epitaxial lateral overgrowth (CELOG).

Place, publisher, year, edition, pages
IEEE, 2016
Keywords
corrugated epitaxial lateral overgrowth, epitaxial lateral overgrowth, III-V/Si heterojunction solar cells, Heterojunctions, Hydrides, Semiconducting indium, Vapor phase epitaxy, Hetero interfaces, Heterojunction solar cells, Hydride vapor phase epitaxy, Epitaxial growth
National Category
Metallurgy and Metallic Materials
Identifiers
urn:nbn:se:kth:diva-202175 (URN)10.1109/ICIPRM.2016.7528828 (DOI)2-s2.0-84992035477 (Scopus ID)9781509019649 (ISBN)
Conference
2016 Compound Semiconductor Week, CSW 2016, 26 June 2016 through 30 June 2016
Note

QC 20170307

Available from: 2017-03-07 Created: 2017-03-07 Last updated: 2017-06-15Bibliographically approved
Lourdudoss, S. (2016). Heteroepitaxy of InP on Si for photonic and photovoltaic applications. In: 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS): . Paper presented at 28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), JUN 26-30, 2016, Toyama, JAPAN. IEEE
Open this publication in new window or tab >>Heteroepitaxy of InP on Si for photonic and photovoltaic applications
2016 (English)In: 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), IEEE, 2016Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
IEEE, 2016
National Category
Materials Engineering
Identifiers
urn:nbn:se:kth:diva-202474 (URN)10.1109/ICIPRM.2016.7528822 (DOI)000392285400305 ()978-1-5090-1964-9 (ISBN)
Conference
28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), JUN 26-30, 2016, Toyama, JAPAN
Note

QC 20170302

Available from: 2017-03-02 Created: 2017-03-02 Last updated: 2017-03-02Bibliographically approved
Peretti, R., Liverini, V., Süess, M. J., Liang, Y., Vigneron, P. B., Wolf, J. M., . . . Faist, J. (2016). Room temperature operation of a deep etched buried heterostructure photonic crystal quantum cascade laser. Laser & Photonics reviews, 10(5), 843-848
Open this publication in new window or tab >>Room temperature operation of a deep etched buried heterostructure photonic crystal quantum cascade laser
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2016 (English)In: Laser & Photonics reviews, ISSN 1863-8880, E-ISSN 1863-8899, Vol. 10, no 5, p. 843-848Article in journal (Refereed) Published
Abstract [en]

High power single mode quantum cascade lasers with a narrow far field are important for several applications including surgery or military countermeasure. Existing technologies suffer from drawbacks such as operation temperature and scalability. In this paper we introduce a fabrication approach that potentially solves simultaneously these remaining limitations. We demonstrate and characterize deep etched, buried photonic crystal quantum cascade lasers emitting around a wavelength of 8.5 μm. The active region was dry etched before being regrown with semi-insulating Fe:InP. This fabrication strategy results in a refractive index contrast of 10% allowing good photonic mode control, and simultaneously provides good thermal extraction during operation. Single mode emission with narrow far field pattern and peak powers up to 0.88 W at 263 K were recorded from the facet of the photonic crystal laser, and lasing operation was maintained up to room temperature. The lasing modes emitted from square photonic crystal mesas with a side length of 550μm, were identified as slow Bloch photonic crystal modes by means of three-dimensional photonic simulations and measurements. (Figure presented.).

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2016
Keywords
Mid infrared, photonic crystal, single mode, quantum cascade laser, Laser optics, Military applications, Military electronic countermeasures, Photonic crystals, Refractive index, Semiconductor lasers, Buried heterostructures, Fabrication strategies, Operation temperature, Photonic crystal laser, Room-temperature operation, Simulations and measurements, Single mode, Single mode emission, Quantum cascade lasers
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-194897 (URN)10.1002/lpor.201600047 (DOI)000384675200012 ()2-s2.0-84985906096 (Scopus ID)
Note

QC 20161207

Available from: 2016-12-07 Created: 2016-11-01 Last updated: 2017-11-29Bibliographically approved
Sun, Y., Omanakuttan, G. & Lourdudoss, S. (2015). An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth. Applied Physics Letters, 106(21), Article ID 213504.
Open this publication in new window or tab >>An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth
2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 21, article id 213504Article in journal (Refereed) Published
Abstract [en]

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP: Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm(2) at a reverse voltage of -1V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm(2), an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.

Keywords
Defect density, Defects, Efficiency, Epitaxial growth, Heterojunctions, Interfaces (materials), Lattice mismatch, Open circuit voltage, Photodiodes, Photovoltaic effects, Quantum efficiency, Scanning electron microscopy, Semiconductor quantum wells, Silicon, Solar cells, Current-voltage measurements, Diode characteristics, Epitaxial lateral overgrowth, External quantum efficiency, Heterojunction photodiodes, High-efficiency solar cells, Hydride vapor phase epitaxy, Internal quantum efficiency
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-169968 (URN)10.1063/1.4921992 (DOI)000355631400048 ()2-s2.0-84930941383 (Scopus ID)
Funder
Swedish Energy AgencyVINNOVA
Note

QC 20150625

Available from: 2015-06-25 Created: 2015-06-25 Last updated: 2017-12-04Bibliographically approved
Zheng, Q., Kim, H., Zhang, R., Sardela, M., Zuo, J., Manavaimaran, B., . . . Braun, P. V. (2015). Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy. Journal of Applied Physics, 118(22), Article ID 224303.
Open this publication in new window or tab >>Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy
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2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 118, no 22, article id 224303Article in journal (Refereed) Published
Abstract [en]

Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1-xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2015
Keywords
X-RAY-DIFFRACTION, LIGHT-EMITTING-DIODES, OPTOELECTRONIC DEVICES, BANDGAP CRYSTALS, SOLAR-CELLS, WAVE-GUIDES, GAINP, HETEROSTRUCTURES, RANGE, GAAS
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-180605 (URN)10.1063/1.4937273 (DOI)000367193100015 ()2-s2.0-84950115310 (Scopus ID)
Note

QC 20160121

Available from: 2016-01-21 Created: 2016-01-19 Last updated: 2017-11-30Bibliographically approved
Lourdudoss, S., Metaferia, W., Junesand, C., Manavaimaran, B., Ferre, S., Simozrag, B., . . . Faist, J. (2015). Hydride vapour phase epitaxy assisted buried heterostructure quantum cascade lasers for sensing applications. In: QUANTUM SENSING AND NANOPHOTONIC DEVICES XII: . Paper presented at Conference on Quantum Sensing and Nanophotonic Devices XII, FEB 08-12, 2015, San Francisco, CA. , 9370, Article ID 93700D.
Open this publication in new window or tab >>Hydride vapour phase epitaxy assisted buried heterostructure quantum cascade lasers for sensing applications
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2015 (English)In: QUANTUM SENSING AND NANOPHOTONIC DEVICES XII, 2015, Vol. 9370, article id 93700DConference paper, Published paper (Refereed)
Abstract [en]

Buried heterostructure (BH) lasers are routinely fabricated for telecom applications. Development of quantum cascade lasers (QCL) for sensing applications has largely benefited from the technological achievements established for telecom lasers. However, new demands are to be met with when fabricating BH-QCLs. For example, hetero-cascade and multi-stack QCLs, with several different active regions stacked on top of each other, are used to obtain a broad composite gain or increased peak output power. Such structures have thick etch ridges which puts severe demand in carrying out regrowth of semi-insulating layer around very deeply etched (>10 mu m) ridges in short time to realize BH-QCL. For comparison, telecom laser ridges are normally only <5 mu m deep. We demonstrate here that hydride vapour phase epitaxy (HVPE) is capable of meeting this new demand adequately through the fabrication of BH-QCLs in less than 45 minutes for burying ridges etched down to 10-15 mu m deep. This has to be compared with the normally used regrowth time of several hours, e.g., in a metal organic vapour phase epitaxy (MOVPE) reactor. This includes also micro-stripe lasers resembling grating-like ridges for enhanced thermal dissipation in the lateral direction. In addition, we also demonstrate HVPE capability to realize buried heterostructure photonic crystal QCLs for the first time. These buried lasers offer flexibility in collecting light from the surface and relatively facile device characterization feasibility of QCLs in general; but the more important benefits of such lasers are enhanced light matter interaction leading to ultra-high cavity Q-factors, tight optical confinement, possibility to control the emitted mode pattern and beam shape and substantial reduction in laser threshold.

Series
Proceedings of SPIE, ISSN 0277-786X
Keywords
Buried heterostructure quantum cascade lasers, Micro-stripe QCL, Photonic crystal QCL
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-164012 (URN)10.1117/12.2078763 (DOI)000350275500007 ()2-s2.0-84923788577 (Scopus ID)978-1-62841-460-8 (ISBN)
Conference
Conference on Quantum Sensing and Nanophotonic Devices XII, FEB 08-12, 2015, San Francisco, CA
Note

QC 20150423

Available from: 2015-04-23 Created: 2015-04-13 Last updated: 2015-04-23Bibliographically approved
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ORCID iD: ORCID iD iconorcid.org/0000-0002-0977-2598

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