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Lourdudoss, SebastianORCID iD iconorcid.org/0000-0002-0977-2598
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Publications (10 of 158) Show all publications
Strömberg, A., Omanakuttan, G., Mu, T., Natesan, P. V., Tofa, T. S., Bailly, M., . . . Sun, Y.-T. (2019). Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi-Phase-Matching Applications. Physica status solidi. A, Applied research
Open this publication in new window or tab >>Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi-Phase-Matching Applications
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2019 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396XArticle in journal (Refereed) Epub ahead of print
Abstract [en]

Heteroepitaxial growth of orientation‐patterned (OP) GaP (OP‐GaP) on wafer‐bonded OP‐GaAs templates is investigated by low‐pressure hydride vapor phase epitaxy for exploiting the beneficial low two‐photon absorption properties of GaP with the matured processing technologies and higher‐quality substrates afforded by GaAs. First, GaP homoepitaxial selective area growth (SAG) is conducted to investigate the dependence of GaP SAG on precursor flows and temperatures toward achieving a high vertical growth rate and equal lateral growth rate in the [110] and [-110]‐oriented openings. Deteriorated domain fidelity is observed in the heteroepitaxial growth of OP‐GaP on OP‐GaAs due to the enhanced growth rate on domain boundaries by threading dislocations generated by 3.6% lattice matching in GaP/GaAs. The dependence of dislocation dynamics on heteroepitaxial growth conditions of OP‐GaP on OP‐GaAs is studied. High OP‐GaP domain fidelity associated with low threading dislocation density and a growth rate of 57 μm h−1 are obtained by increasing GaCl flow. The properties of heteroepitaxial GaP on semi‐insulating GaAs is studied by terahertz time‐domain spectroscopy in the terahertz range. The outcomes of this work will pave the way to exploit heteroepitaxial OP‐GaP growth on OP‐GaAs for frequency conversion by quasi‐phase‐matching in the mid‐infrared and terahertz regions.

Keywords
heteroepitaxy, hydride vapor phase epitaxy, orientation-patterned GaP, quasi-phase-matching, wafer-bonded orientation-patterned GaAs
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-263074 (URN)10.1002/pssa.201900627 (DOI)000491109100001 ()2-s2.0-85074368712 (Scopus ID)
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20191111

Available from: 2019-10-29 Created: 2019-10-29 Last updated: 2019-11-11Bibliographically approved
Sun, Y.-T. & Lourdudoss, S. (2019). Epitaxial lateral overgrowth of III-V semiconductors on Si for photonic integration. In: Lourdudoss, S Bowers, JE Jagadish, C (Ed.), FUTURE DIRECTIONS IN SILICON PHOTONICS: (pp. 163-200). ELSEVIER ACADEMIC PRESS INC
Open this publication in new window or tab >>Epitaxial lateral overgrowth of III-V semiconductors on Si for photonic integration
2019 (English)In: FUTURE DIRECTIONS IN SILICON PHOTONICS / [ed] Lourdudoss, S Bowers, JE Jagadish, C, ELSEVIER ACADEMIC PRESS INC , 2019, p. 163-200Chapter in book (Refereed)
Place, publisher, year, edition, pages
ELSEVIER ACADEMIC PRESS INC, 2019
Series
Semiconductors and Semimetals, ISSN 0080-8784 ; 101
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-261342 (URN)10.1016/bs.semsem.2019.07.004 (DOI)000486568000006 ()2-s2.0-85070354997 (Scopus ID)978-0-12-820518-1 (ISBN)978-0-12-818857-6 (ISBN)
Note

QC 20191007

Available from: 2019-10-07 Created: 2019-10-07 Last updated: 2019-10-07Bibliographically approved
Wang, Z., Liang, Y., Meng, B., Sun, Y.-T., Omanakuttan, G., Gini, E., . . . Scalari, G. (2019). Large area photonic crystal quantum cascade laser with 5 W surface-emitting power. Optics Express, 27(16), 22708-22716
Open this publication in new window or tab >>Large area photonic crystal quantum cascade laser with 5 W surface-emitting power
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2019 (English)In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 27, no 16, p. 22708-22716Article in journal (Refereed) Published
Abstract [en]

Room temperature surface emission is realized on a large area (1.5 mm x 1.5 mm) photonic crystal quantum cascade laser (PhC-QCL) driven under pulsed mode, at the wavelength around 8.75 mu m. By introducing in-plane asymmetry to the pillar shape and optimizing the current injection with a grid-like window contact, the maximum peak power of the PhC-QCL is up to 5 W. The surface emitting beam has a crossing shape with 10 degrees divergence.

Place, publisher, year, edition, pages
OPTICAL SOC AMER, 2019
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-257554 (URN)10.1364/OE.27.022708 (DOI)000478790400079 ()2-s2.0-85070311588 (Scopus ID)
Note

QC 20190925

Available from: 2019-09-25 Created: 2019-09-25 Last updated: 2019-10-16Bibliographically approved
Omanakuttan, G., Martinez Sacristan, O., Marcinkevičius, S., Uzdavinys, T. K., Jimenez, J., Ali, H., . . . Sun, Y.-T. (2019). Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth. Optical Materials Express, 9(3), 1488-1500
Open this publication in new window or tab >>Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth
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2019 (English)In: Optical Materials Express, ISSN 2159-3930, E-ISSN 2159-3930, Vol. 9, no 3, p. 1488-1500Article in journal (Refereed) Published
Abstract [en]

We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Place, publisher, year, edition, pages
OPTICAL SOC AMER, 2019
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-247834 (URN)10.1364/OME.9.001488 (DOI)000460134500051 ()
Note

QC 20190326

Available from: 2019-03-26 Created: 2019-03-26 Last updated: 2019-05-10Bibliographically approved
Wang, Z., Liang, Y., Meng, B., Sun, Y.-T., Omanakuttan, G., Gini, E., . . . Scalari, G. (2019). Over 2W room temperature lasing on a large area photonic crystal quantum cascade laser. In: 2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO): . Paper presented at Conference on Lasers and Electro-Optics (CLEO), MAY 05-10, 2019, San Jose, CA. IEEE
Open this publication in new window or tab >>Over 2W room temperature lasing on a large area photonic crystal quantum cascade laser
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2019 (English)In: 2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), IEEE , 2019Conference paper, Published paper (Refereed)
Abstract [en]

We present a large-area (1.5 mm x 1.5 mm) photonic crystal quantum cascade laser, with over 2 W peak power at room temperature (289 K), and symmetrical, narrow (<1 degrees), single-lobed surface-emitting beam.

Place, publisher, year, edition, pages
IEEE, 2019
Series
Conference on Lasers and Electro-Optics, ISSN 2160-9020
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-259478 (URN)10.23919/CLEO.2019.8749311 (DOI)000482226300174 ()2-s2.0-85069174834 (Scopus ID)978-1-943580-57-6 (ISBN)
Conference
Conference on Lasers and Electro-Optics (CLEO), MAY 05-10, 2019, San Jose, CA
Note

QC 20190917

Available from: 2019-09-17 Created: 2019-09-17 Last updated: 2019-09-17Bibliographically approved
Wang, Z., Liang, Y., Meng, B., Sun, Y.-T., Omanakuttan, G., Gini, E., . . . Scalari, G. (2019). Over 2W room temperature lasing on a large area photonic crystal quantum cascade laser. In: Optics InfoBase Conference Papers: . Paper presented at Conference on Lasers and Electro-Optics, CLEO: Science and Innovations 2019, San Jose, California, United States, 5–10 May 2019. OSA - The Optical Society, Article ID SW4N.4.
Open this publication in new window or tab >>Over 2W room temperature lasing on a large area photonic crystal quantum cascade laser
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2019 (English)In: Optics InfoBase Conference Papers, OSA - The Optical Society , 2019, article id SW4N.4Conference paper, Published paper (Refereed)
Abstract [en]

We present a large-area (1.5 mm × 1.5 mm) photonic crystal quantum cascade laser, with over 2 W peak power at room temperature (289 K), and symmetrical, narrow (&lt; 1◦), single-lobed surface-emitting beam.

Place, publisher, year, edition, pages
OSA - The Optical Society, 2019
Keywords
Photonic crystals, Peak power, Room temperature lasing, Surface emitting, Quantum cascade lasers
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-262476 (URN)10.1364/CLEO_SI.2019.SW4N.4 (DOI)2-s2.0-85068165506 (Scopus ID)9781557528209 (ISBN)978-1-943580-57-6 (ISBN)
Conference
Conference on Lasers and Electro-Optics, CLEO: Science and Innovations 2019, San Jose, California, United States, 5–10 May 2019
Note

QC 20191016

Available from: 2019-10-16 Created: 2019-10-16 Last updated: 2019-11-13Bibliographically approved
Lourdudoss, S., Bowers, J. E. & Jagadish, C. (2019). SEMICONDUCTORS AND SEMIMETALS Future Directions in Silicon Photonics Preface. In: Lourdudoss, S Bowers, JE Jagadish, C (Ed.), FUTURE DIRECTIONS IN SILICON PHOTONICS: (pp. XV-XVIII). ELSEVIER ACADEMIC PRESS INC
Open this publication in new window or tab >>SEMICONDUCTORS AND SEMIMETALS Future Directions in Silicon Photonics Preface
2019 (English)In: FUTURE DIRECTIONS IN SILICON PHOTONICS / [ed] Lourdudoss, S Bowers, JE Jagadish, C, ELSEVIER ACADEMIC PRESS INC , 2019, p. XV-XVIIIChapter in book (Refereed)
Place, publisher, year, edition, pages
ELSEVIER ACADEMIC PRESS INC, 2019
Series
Semiconductors and Semimetals, ISSN 0080-8784 ; 101
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-261346 (URN)10.1016/S0080-8784(19)30046-8 (DOI)000486568000001 ()2-s2.0-85070529860 (Scopus ID)978-0-12-820518-1 (ISBN)978-0-12-818857-6 (ISBN)
Note

QC 20191007

Available from: 2019-10-07 Created: 2019-10-07 Last updated: 2019-10-07Bibliographically approved
Lourdudoss, S., Chen, R. T. & Jagadish, C. (2018). Preface. In: Semiconductors and Semimetals: (pp. ix-xi). Academic Press Inc.
Open this publication in new window or tab >>Preface
2018 (English)In: Semiconductors and Semimetals, Academic Press Inc. , 2018, p. ix-xiChapter in book (Refereed)
Place, publisher, year, edition, pages
Academic Press Inc., 2018
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-247496 (URN)10.1016/S0080-8784(18)30036-X (DOI)2-s2.0-85054383602 (Scopus ID)9780128150993 (ISBN)
Note

QC20190418

Available from: 2019-04-18 Created: 2019-04-18 Last updated: 2019-04-18Bibliographically approved
Pang, X., Ozolins, O., Zhang, L., Schatz, R., Udalcovs, A., Storck, J., . . . Lourdudoss, S. (2017). 4 Gbps PAM-4 and DMT Free Space Transmission using A 4.65-mu m Quantum Cascaded Laser at Room Temperature. In: 43RD EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC 2017): . Paper presented at Chalmers Univ Technol, Gothenburg, SEP 17-21, 2017. IEEE
Open this publication in new window or tab >>4 Gbps PAM-4 and DMT Free Space Transmission using A 4.65-mu m Quantum Cascaded Laser at Room Temperature
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2017 (English)In: 43RD EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC 2017), IEEE , 2017Conference paper, Published paper (Refereed)
Abstract [en]

We experimentally demonstrate 4Gbps PAM-4 and DMT transmissions using a quantum cascaded laser (QCL) emitting at mid-wavelength infrared of 4.65-mu m and a commercial infrared photovoltaic detector. The QCL is directly modulated and operated at room temperature with Peltier Cooling.

Place, publisher, year, edition, pages
IEEE, 2017
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-231674 (URN)000434969300159 ()
Conference
Chalmers Univ Technol, Gothenburg, SEP 17-21, 2017
Note

QC 20180829

Available from: 2018-08-29 Created: 2018-08-29 Last updated: 2018-08-29Bibliographically approved
Pang, X., Ozolins, O., Zhang, L., Schatz, R., Udalcovs, A., Storck, J., . . . Lourdudoss, S. (2017). 4 Gbps PAM-4 and DMT Free Space Transmission using a 4.65-pm Quantum Cascaded Laser at Room Temperature. In: European Conference on Optical Communication, ECOC: . Paper presented at 43rd European Conference on Optical Communication, ECOC 2017, 17 September 2017 through 21 September 2017 (pp. 1-3). Institute of Electrical and Electronics Engineers Inc.
Open this publication in new window or tab >>4 Gbps PAM-4 and DMT Free Space Transmission using a 4.65-pm Quantum Cascaded Laser at Room Temperature
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2017 (English)In: European Conference on Optical Communication, ECOC, Institute of Electrical and Electronics Engineers Inc. , 2017, p. 1-3Conference paper, Published paper (Refereed)
Abstract [en]

We experimentally demonstrate 4Gbps PAM-4 and DMT transmissions using a quantum cascaded laser (QCL) emitting at mid-wavelength infrared of 4.65μm and a commercial infrared photovoltaic detector. The QCL is directly modulated and operated at room temperature with Peltier Cooling. 

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc., 2017
Keywords
Infrared radiation, Pulse amplitude modulation, Directly modulated, Free-space transmission, Infrared photovoltaic, Mid-wavelength infrared, Peltier cooling, Quantum-cascaded lasers, Optical communication
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-236778 (URN)10.1109/ECOC.2017.8345985 (DOI)2-s2.0-85046954943 (Scopus ID)9781538656242 (ISBN)
Conference
43rd European Conference on Optical Communication, ECOC 2017, 17 September 2017 through 21 September 2017
Funder
Swedish Research CouncilKnut and Alice Wallenberg Foundation
Note

QC 20190109

Available from: 2019-01-09 Created: 2019-01-09 Last updated: 2019-01-09Bibliographically approved
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Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-0977-2598

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