We analytically solve the Landau-Lifshitz equations for the collective magnetization dynamics in a synthetic antiferromagnet (SAF) nanoparticle and uncover a regime of barrier-free switching under a short small-amplitude magnetic field pulse applied perpendicular to the SAF plane. We give examples of specific implementations for forming such low-power and ultra-fast switching pulses. For fully optical, resonant, barrier-free SAF switching we estimate the power per write operation to be ∼100 pJ, 10–100 times smaller than for conventional quasi-static rotation, which should be attractive for memory applications.

Magnetic properties of Y3AlFe4O12 garnet ceramics have been studied over a wide range of temperature (3 – 370 K) and magnetic fields (up to 2 kOe). Effects of varying the temperature on some of the application-specific magnetic characteristics have been analyzed in detail. With the decrease in temperature, the effective anisotropy constant, KEff, is found to sharply rise below ∼150 K, while the saturation magnetization, Ms, changes only slightly (<20 % within 3 – 250 K). The exchange stiffness, Aex, and spin wave stiffness, D, parameters mirror the relatively smooth behavior of the magnetization at low temperatures but display a rapid drop when T approaches TC ≈ 436 K. The temperature dependence of the domain wall thickness and the critical single-domain size correlate with the corresponding values for pure Y3Fe5O12 (YIG) and are in agreement with the theoretical estimates. We conclude by discussing the ways of how to use the obtained results for tailoring the magnetic properties of YIG-based materials for technological applications.

The dynamic magnetic properties of full Heusler alloy thin films of Co 2 FeGe, grown on MgO (001) substrates under different thermal conditions, were investigated. Brillouin light scattering and ferromagnetic resonance measurements revealed that depositing at room temperature followed by annealing at 300 ° C for 1 h produces the best results for maximizing magnetization, exchange stiffness, and minimizing spin-dynamic dissipation in the films, which are desirable characteristics for high-speed spintronic devices. Additionally, strong hybridization of spin waves in the Damon-Eshbach geometry was observed, which is attractive for applications in magnonic signal processing circuits.

The structure and magnetic properties of epitaxial Heusler alloy films (Co2FeGe) deposited on MgO (100) substrates were investigated. Films of 60 nm thickness were prepared by magnetron co-sputtering at different substrate temperatures (TS), and those deposited at room temperature were later annealed at various temperatures (Ta). X-ray diffraction confirmed (001) [110] Co2FeGe || (001) [100] MgO epitaxial growth. A slight tetragonal distortion of the film cubic structure was found in all samples due to the tensile stress induced by the mismatch of the lattice parameters between Co2FeGe and the substrate. Improved quality of epitaxy and the formation of an atomically ordered L21 structure were observed for films processed at elevated temperatures. The values of magnetization increased with increasing TS and Ta. Ferromagnetic resonance (FMR) studies revealed 45° in-plane rotation of the easy anisotropy axis direction depending on the degree of the tetragonal distortion. The film annealed at Ta = 573 K possesses the minimal FMR linewidth and magnetic damping, while both these parameters increase for another TS and Ta. Overall, this study underscores the crucial role of thermal treatment in optimizing the magnetic properties of Co2FeGe films for potential spintronic and magnonic applications.

We demonstrate a method of obtaining tunable magnetic anisotropy inCu-Al-Mn shape memory alloys, consisting of aging the material in a magnetic field of 1.5 KOe at elevated temperature ofT=200°C for the precipitation of ferromagnetic nanoparticle of an elongated shape. Using a combination of magnetic and structural measurements, the structural phase transformations of a martensitic type and paramagnetic-superparamagnetic-spin glass transitions were studied in a wide temperature range. On magnetic field aging, a decrease in magnetization and an increase in coercivity are observed, accompanied by a slight shift in the temperature of the magnetic and martensitic phase transition. The observed changes in the magnetic properties of the nanostructured material are explained by additional induced magnetic anisotropy resulting from such thermomagnetic treatment.

We investigate the switching of a magnetic nanoparticle comprising the middle free layer of a memory cell based on a double magnetic tunnel junction under the combined effect of spin-polarized current and weak on-chip magnetic field. We obtain the timing and amplitude parameters for the current and field pulses needed to achieve 100 ps range inertia-free switching under least-power dissipation. The considered method does not rely on the stochastics of thermal agitation of the magnetic nanoparticle typically accompanying spin-torque switching. The regime of ultimate switching speed efficiency found in this work is promising for applications in high-performance nonvolatile memory.

This work is focused on the synthesis of Aldoped yttrium-iron garnet ferrites via precipitation in aqueous solutions at controllably maintainedp H using different sequences for metal cations precipitation. The effect of different technological routes on the specifics of the crystalline structure formation and the temperature stability of the magnetic properties are studied in detail for Y3AlFe4O12 nanoparticles and bulk samples comprised of such nanoparticles. A comprehensive analysis of the results obtained yields the strategy for optimizing the synthesis roadmap for obtaining Al-doped yttrium-iron ferrite garnets with the desired set of physical properties for technological applications.

We present all-electrical operation of a FexCr1-x-based Curie switch at room temperature. More specifically, we study the current-induced thermally driven transition from ferromagnetic to antiferromagnetic Magnetometry measurements at different temperatures show that the transition from the ferromagnetic to the antiferromagnetic coupling at zero field is observed at approximately 325 K. Analytical modeling confirms that the observed temperature-dependent transition from indirect ferromagnetic to indirect antiferromagnetic interlayer exchange coupling originates from the modification of the effective interlayer exchange constant through the ferromagnetic-to-paramagnetic transition in the Fe17.5Cr82.5 spacer with minor contributions from the thermally driven variations of the magnetization and magnetic anisotropy of the Fe layers. Room-temperature current-in-plane magnetotransport measurements on the patterned Fe/Cr/Fe17.5Cr82.5/Cr/Fe strips show the transition from the "low-resistance" parallel to the "highresistance" antiparallel remanent magnetization configuration, upon increased probing current density. Quantitative comparison of the switching fields, obtained by magnetometry and magnetotransport, confirms that the Joule heating is the main mechanism responsible for the observed current-induced resistive switching.

We investigate the interlayer coupling between two thin ferromagnetic (F) films mediated by an antiferromagnetic (AF) spacer in F∗/AF/F trilayers and show how it transitions between different regimes on changing the AF thickness. Employing layer-selective Kerr magnetometry and ferromagnetic-resonance techniques in a complementary manner enables us to distinguish between three functionally distinct regimes of such ferromagnetic interlayer coupling. The F layers are found to be individually and independently exchange-biased for thick FeMn spacers - the first regime of no interlayer F-F∗ coupling. F-F∗ coupling appears on decreasing the FeMn thickness below 9 nm. In this second regime found in structures with 6.0-9.0-nm-thick FeMn spacers, the interlayer coupling exists only in a finite temperature interval just below the effective Néel temperature of the spacer, which is due to magnon-mediated exchange through the thermally softened antiferromagnetic spacer, vanishing at lower temperatures. The third regime, with FeMn thinner than 4 nm, is characterized by a much stronger interlayer coupling in the entire temperature interval, which is attributed to a magnetic-proximity induced ferromagnetic exchange. These experimental results, spanning the key geometrical parameters and thermal regimes of the F∗/AF/F nanostructure, complemented by a comprehensive theoretical analysis, should broaden the understanding of the interlayer exchange in magnetic multilayers and potentially be useful for applications in spin thermionics.

Ferromagnetic/antiferromagnetic bilayers are interfaced with normal metal/ferromagnetic bilayers to form F*/AF/N/F valves. The N-spacer thickness is chosen such that it mediates strong indirect exchange [Ruderman-Kittel-Kasuya-Yosida (RKKY)] between the outer ferromagnetic layers, which varies in strength/direction depending on the N thickness and changes its direction on switching F. The system exhibits a strong modulation of the F*/AF exchange bias, oscillating in strength synchronously with the oscillation in the interlayer RKKY exchange across the normal metal spacer. The effect is explained as due to a superposition taking place within the antiferromagnetic layer of the direct-exchange proximity effect from the F*/AF interface and the indirect RKKY exchange from F penetrating AF via N. The modulation, expressed via the strength of the F*/AF bias field, reaches 400% at the first RKKY peak.