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Publications (10 of 246) Show all publications
Heinig, S., Jacobs, K., Ilves, K., Bessegato, L., Bakas, P., Norrga, S. & Nee, H.-P. (2019). Implications of Capacitor Voltage Imbalance on the Operation of the Semi-Full-BridgeSubmodule. IEEE transactions on power electronics
Open this publication in new window or tab >>Implications of Capacitor Voltage Imbalance on the Operation of the Semi-Full-BridgeSubmodule
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2019 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, ISSN 0885-8993Article in journal (Refereed) Published
Abstract [en]

Future meshed high-voltage direct current grids require modular multilevel converters with extended functionality. One of the most interesting new submodule topologies is the semi-full-bridge because it enables efficient handling of DC-side short circuits while having reduced power losses compared to an implementation with full-bridge submodules. However, the semi-full-bridge submodule requires the parallel connection of capacitors during normal operation which can cause a high redistribution current in case the voltages of the two submodule capacitors are not equal. The maximum voltage difference and resulting redistribution current have been studied analytically, by means of simulations and in a full-scale standalone submodule laboratory setup. The most critical parameter is the capacitance mismatch between the two capacitors. The experimental results from the full-scale prototype show that the redistribution current peaks at 500A if the voltage difference is 10V before paralleling and increases to 2500A if the difference is 40V. However, neglecting very unlikely cases, the maximum voltage difference predicted by simulations is not higher than 20-30V for the considered case. Among other measures, a balancing controller is proposed which reduces the voltage difference safely if a certain maximum value is surpassed. The operating principle of the controller is described in detail and verified experimentally on a down-scaled submodule within a modular multilevel converter prototype. It can be concluded that excessively high redistribution currents can be prevented. Consequently, they are no obstacle for using the semi-full-bridge submodule in future HVDC converters.

Keywords
AC-DC power conversion, HVDC converters, HVDC transmission, Power transmission, Fault tolerance, Power system faults
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-240824 (URN)10.1109/TPEL.2018.2890622 (DOI)
Funder
SweGRIDS - Swedish Centre for Smart Grids and Energy Storage, CPC4
Note

QC 20190107

Available from: 2019-01-03 Created: 2019-01-03 Last updated: 2019-01-07Bibliographically approved
Nikouie, M., Zhang, H., Wallmark, O. & Nee, H.-P. (2018). A highly integrated electric drive system for tomorrow's EVs and HEVs. In: Proceedings - 2017 IEEE Southern Power Electronics Conference, SPEC 2017: . Paper presented at 2017 IEEE Southern Power Electronics Conference, SPEC 2017, Hotel Enjoy Puerto VarasPuerto Varas, Chile, 4 December 2017 through 7 December 2017 (pp. 1-5). Institute of Electrical and Electronics Engineers (IEEE)
Open this publication in new window or tab >>A highly integrated electric drive system for tomorrow's EVs and HEVs
2018 (English)In: Proceedings - 2017 IEEE Southern Power Electronics Conference, SPEC 2017, Institute of Electrical and Electronics Engineers (IEEE), 2018, p. 1-5Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents an ultra-compact integrated electric drive prototype. The prototype illustrates the integration of a fractional slot concentrated winding (FSCW) electric motor, a stacked polyphase bridges (SPB) converter, the control boards, and the water cooling plates into a common housing. This integrated prototype offers a high potential of compactness and cost reduction for electric and hybrid electric vehicles.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-238250 (URN)10.1109/SPEC.2017.8333555 (DOI)2-s2.0-85049217902 (Scopus ID)9781509064250 (ISBN)
Conference
2017 IEEE Southern Power Electronics Conference, SPEC 2017, Hotel Enjoy Puerto VarasPuerto Varas, Chile, 4 December 2017 through 7 December 2017
Note

QC 20181120

Available from: 2018-11-20 Created: 2018-11-20 Last updated: 2018-11-20Bibliographically approved
Ciftci, B., Gross, J., Norrga, S., Kildehöj, L. & Nee, H.-P. (2018). A Proposal for Wireless Control of Submodules in Modular Multilevel Converters. In: : . Paper presented at 20th European Conference on Power Electronics and Applications.
Open this publication in new window or tab >>A Proposal for Wireless Control of Submodules in Modular Multilevel Converters
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2018 (English)Conference paper, Published paper (Refereed)
Abstract [en]

The modular multilevel converter is one of the most preferred converters for high-power conversion applications. Wireless control of the submodules can contribute to its evolution by lowering the material and labor costs of cabling and by increasing the availability of the converter. However, wireless control leads to many challenges for the control and modulation of the converter as well as for proper low-latency high-reliability communication. This paper investigates the tolerable asynchronism between phase-shifted carriers used in modulation from a wireless control point of view and proposes a control method along with communication protocol for wireless control. The functionality of the proposed method is validated by computer simulations in steady state.

Keywords
Modular multilevel converter, Wireless control
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-239736 (URN)000450299300223 ()2-s2.0-85057065852 (Scopus ID)9789075815290 (ISBN)
Conference
20th European Conference on Power Electronics and Applications
Note

QC 20181203

Available from: 2018-12-02 Created: 2018-12-02 Last updated: 2018-12-10Bibliographically approved
Velander, E., Kruse, L. (., Wiik, T. (., Wiberg, A., Colmenares, J. & Nee, H.-P. (2018). An IGBT Turn-ON Concept Offering Low Losses Under Motor Drive dv/dt Constraints Based on Diode Current Adaption. IEEE transactions on power electronics, 33(2), 1143-1153
Open this publication in new window or tab >>An IGBT Turn-ON Concept Offering Low Losses Under Motor Drive dv/dt Constraints Based on Diode Current Adaption
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2018 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 33, no 2, p. 1143-1153Article in journal (Refereed) Published
Abstract [en]

In this paper, a new low-loss turn-ON concept for the silicon insulated-gate bipolar transistor (Si-IGBT) in combination with silicon p-i-n diode is presented. The concept is tailored for two-level motor converters in the 100 kW to 1 MW range under the constraint that the output voltages slopes are limited in order to protect the motor windings. Moreover, analyses of the IGBT turn-ON and diode reverse recovery voltage slopes are presented concluding that the diode reverse recovery is the worst case. The concept includes a low-cost measurement of the free-wheeling diode current and temperature by the gate driver without necessity of acquiring this information from the converter control board. By using this concept, the output dv/dt at the diode turn-OFF can be kept approximately constant regardless of the commutated current and junction temperature. Hence, the switching losses could be decreased for the currents and temperatures where the voltage slopes are lower when using a conventional gate driver optimized for the worst case. Moreover, results are shown for one such power semiconductor, showing a total switching loss reduction of up to 28% in comparison with a gate driver without current and temperature measurement. Finally, this concept is particularly suitable for high power semiconductor modules in half-bridge configuration which are recently proposed by several suppliers.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2018
Keywords
motor drives, insulated gate bipolar transistors, power semiconductor devices
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-217925 (URN)10.1109/TPEL.2017.2688474 (DOI)000414414600025 ()2-s2.0-85034081872 (Scopus ID)
Note

QC 20171121

Available from: 2017-11-21 Created: 2017-11-21 Last updated: 2017-11-21Bibliographically approved
Velander, E., Bohlin, G., Sandberg, A., Wiik, T., Botling, F., Lindahl, M., . . . Nee, H.-P. (2018). An Ultralow Loss Inductorless dv/dt Filter Concept for Medium-Power Voltage Source Motor Drive Converters With SiC Devices. IEEE transactions on power electronics, 33(7), 6072-6081
Open this publication in new window or tab >>An Ultralow Loss Inductorless dv/dt Filter Concept for Medium-Power Voltage Source Motor Drive Converters With SiC Devices
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2018 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 33, no 7, p. 6072-6081Article in journal (Refereed) Published
Abstract [en]

In this paper, a novel dv/dt filter is presented targeted for 100-kW to 1-MW voltage source converters using silicon carbide (SiC) power devices. This concept uses the stray inductance between the power device and the converter output as a filter component in combination with an additional small RC-link. Hence, a lossy, bulky, and costly filter inductor is avoided and the resulting output dv/dt is limited to 5-10 kV/mu s independent of the output current and switching speed of the SiC devices. As a consequence, loads with dv/dt constraints, e.g., motor drives can be fed from SiC devices enabling full utilization of their high switching speed. Moreover, a filter-model is proposed for the selection of filter component values for a certain dv/dt requirement. Finally, results are shown using a 300-A 1700-V SiC metal-oxide-semiconductor field-effect transistor (MOSFET). These results show that the converter output dv/dt can be limited to 7.5 kV/mu s even though values up to 47 kV/mu s weremeasured across the SiC MOSFET module. Hence, the total switching losses, including the filter losses, are verified to be three times lower compared to when the MOSFET dv/dt was slowed down by adjusting the gate driver.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2018
Keywords
AC motor drives, dv/dt control methods, electromagnetic interference (EMI), filters, power semiconductor devices, SiC MOSFET
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-226180 (URN)10.1109/TPEL.2017.2739839 (DOI)000428645100047 ()2-s2.0-85028466153 (Scopus ID)
Note

QC 20180516

Available from: 2018-05-16 Created: 2018-05-16 Last updated: 2018-11-29Bibliographically approved
Jacobs, K., Nee, H.-P. & Norrga, S. (2018). Dissipation Loop for Shoot-Through Faults in HVDC Converter Cells. In: 2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA): . Paper presented at 8th International Power Electronics Conference (IPEC-Niigata ECCE Asia) Location: Niigata, JAPAN (pp. 3292-3298). Institute of Electrical and Electronics Engineers (IEEE)
Open this publication in new window or tab >>Dissipation Loop for Shoot-Through Faults in HVDC Converter Cells
2018 (English)In: 2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA), Institute of Electrical and Electronics Engineers (IEEE), 2018, p. 3292-3298Conference paper, Published paper (Refereed)
Abstract [en]

Converter cells for HVDC applications store large amounts of energy. This energy might be dissipated in a very short time in case of a shoot-through fault. Measures to avoid shoot-through or handle the extreme currents during a fault and prevent damage from neighboring components are essential to ensure a continued operation of the converter. With future high-voltage silicon carbide semiconductors, cell voltages can be increased leading to higher stored energy per cell. In cells with thyristor-based semiconductors, e.g. IGCTs, a di/dt reactor may have to be employed. This paper presents a method to handle the dissipated energy during shoot-through which makes use of the inherently needed di/dt reactor. The majority of the stored energy in the cell can be dissipated in a dedicated discharge loop formed by the reactor and an antiparallel bypass thyristor. After diverting the fault current into the dissipation loop, there is no current through any other component of the cell.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018
Series
International Conference on Power Electronics, ISSN 2150-6078
National Category
Energy Systems
Research subject
Electrical Engineering; Energy Technology
Identifiers
urn:nbn:se:kth:diva-239555 (URN)10.23919/IPEC.2018.8507546 (DOI)000449328903038 ()2-s2.0-85057320911 (Scopus ID)978-4-88686-405-5 (ISBN)
Conference
8th International Power Electronics Conference (IPEC-Niigata ECCE Asia) Location: Niigata, JAPAN
Funder
SweGRIDS - Swedish Centre for Smart Grids and Energy Storage
Note

QC 20181127

Available from: 2018-11-26 Created: 2018-11-26 Last updated: 2019-01-30Bibliographically approved
Sadik, D., Ranstad, P. & Nee, H.-P. (2018). Effect of Parasitic Inductance in a Soft-Switching SiC Power Converter. In: 2018 20TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'18 ECCE EUROPE): . Paper presented at 20th European Conference on Power Electronics and Applications (EPE ECCE Europe), SEP 17-21, 2018, Riga, LATVIA. IEEE
Open this publication in new window or tab >>Effect of Parasitic Inductance in a Soft-Switching SiC Power Converter
2018 (English)In: 2018 20TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'18 ECCE EUROPE), IEEE , 2018Conference paper, Published paper (Refereed)
Abstract [en]

Wide Bandgap power semiconductors such as SiC MOSFETs, have enabled compact and highly efficient power converters operated at higher frequencies. However, parasitic inductance of the package may significantly increase power losses and limit the operation. This paper aims to quantify experimentally these losses in a soft-switching converter. A "removable" stray inductance is implemented in a setup consisting of discrete SiC MOSFET units. Thus, the power loss of the transistors with and without stray inductance can be compared. Similarly slower switching speeds are also implemented to fully emulate a 62-mm module. The power loss induced by the package can thus be evaluated.

Place, publisher, year, edition, pages
IEEE, 2018
Series
European Conference on Power Electronics and Applications, ISSN 2325-0313
National Category
Environmental Engineering Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-240054 (URN)000450299300216 ()978-9-0758-1528-3 (ISBN)
Conference
20th European Conference on Power Electronics and Applications (EPE ECCE Europe), SEP 17-21, 2018, Riga, LATVIA
Note

QC 20181210

Available from: 2018-12-10 Created: 2018-12-10 Last updated: 2018-12-10Bibliographically approved
Risseh, A., Nee, H.-P. & Goupil, C. (2018). Electrical Power Conditioning System for Thermoelectric Waste Heat Recovery in Commercial Vehicles. IEEE TRANSACTIONS ON TRANSPORTATION ELECTRIFICATION (99)
Open this publication in new window or tab >>Electrical Power Conditioning System for Thermoelectric Waste Heat Recovery in Commercial Vehicles
2018 (English)In: IEEE TRANSACTIONS ON TRANSPORTATION ELECTRIFICATION, ISSN 2332-7782, no 99Article in journal (Refereed) Published
Abstract [en]

A considerable part of the fuel energy in vehicles never reaches the wheels and entirely converts to waste heat. In a heavy duty vehicle (HDV) the heat power that escapes from the exhaust system may reach 170 kW. The waste heat can be converted into useful electrical power using thermoelectric generator (TEG). During the last decades, many studies on the electrical power conditioning system of TEGs have been conducted. However, there is a lack of studies evaluating the electrical instrumentation, the impact of the converter-efficiency, and the TEG arrangement on a real large-scale TEG on-boarda drivable vehicle. In this study, the most important parameters for designing electrical power conditioning systems for two TEGs, developed for a real-scale HDV as well as experimental results demonstrating the recovered electrical power, are presented. Eight synchronous inter-leaved step-down converters with 98 % efficiency with perturb and observe maximum power point tracker was developed and tested for this purpose. The power conditioning system was communicating with the on-board computers through the controller area network and reported the status of the TEGs and the recovered electrical power. The maximum recovered electrical power from the TEGs reached 1 kW which was transmitted to the electrical system of the vehicle, relieving the internal combustion engine.

Place, publisher, year, edition, pages
IEEE, 2018
Keywords
Thermoelectricity, power converter, power management, silicon carbide MOSFET, maximum power point tracker, inter-leaved converter, internal combustion engine, energy harvesting, heavy duty vehicle, thermoelectric generator, renewable energy sources, exhaust system
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-222266 (URN)10.1109/TTE.2018.2796031 (DOI)000434447400019 ()2-s2.0-85048237914 (Scopus ID)
Note

QC 20180206

Available from: 2018-02-05 Created: 2018-02-05 Last updated: 2019-03-16Bibliographically approved
Risseh, A. E., Nee, H.-P. & Kostov, K. (2018). Fast Switching Planar Power Module With SiC MOSFETs and Ultra-low Parasitic Inductance. In: 2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA): . Paper presented at 8th International Power Electronics Conference (IPEC-Niigata ECCE Asia), MAY 20-24, 2018, Niigata, JAPAN (pp. 2732-2737). Institute of Electrical and Electronics Engineers (IEEE)
Open this publication in new window or tab >>Fast Switching Planar Power Module With SiC MOSFETs and Ultra-low Parasitic Inductance
2018 (English)In: 2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA), Institute of Electrical and Electronics Engineers (IEEE), 2018, p. 2732-2737Conference paper, Published paper (Refereed)
Abstract [en]

Parasitic inductances caused by the package of semiconductor devices in power converters, are limiting the switching speed and giving rise to higher switching losses than necessary. In this study a half-bridge planar power module with Silicon Carbide (SiC) MOSFET bare dies was designed and manufactured for ultra-low parasitic inductance. The circuit structure was simulated and the parasitic inductances were extracted from ANSYS-Q3D. The values were then fed into LT-Spice to simulate the electrical behavior of the half-bridge. The experimental and simulation results were compared to each other and were used to adjust and easily extend the simulation model with additional MOSFETs for higher current capability. It was shown that the proposed planar module, with four parallel SiC MOSFETs at each position, is able to switch 600V and 400A during 40 and 17ns with E-ON and E-OFF equal to 3.1 and 1.3mJ, respectively. Moreover, unlike the commercial modules, this design allows double-sided cooling to extract the generated heat from the device, resulting in lower operating temperature.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018
Series
International Conference on Power Electronics, ISSN 2150-6078
Keywords
SiC MOSFET, planar power module, bare die, ultra-low parasitic inductance, fast switching, PCB, double sided cooling
National Category
Other Engineering and Technologies
Identifiers
urn:nbn:se:kth:diva-239510 (URN)000449328902109 ()978-4-88686-405-5 (ISBN)
Conference
8th International Power Electronics Conference (IPEC-Niigata ECCE Asia), MAY 20-24, 2018, Niigata, JAPAN
Note

QC 20181128

Available from: 2018-11-28 Created: 2018-11-28 Last updated: 2019-03-16Bibliographically approved
Risseh, A. E., Nee, H.-P. & Kostov, K. (2018). Realization of a Planar Power Circuit With Silicon Carbide MOSFETs on Printed Circuit Board. In: SPEEDAM 2018 - Proceedings: International Symposium on Power Electronics, Electrical Drives, Automation and Motion: . Paper presented at 2018 International Symposium on Power Electronics, Electrical Drives, Automation and Motion, SPEEDAM 2018, Amalfi, Italy, 20 June 2018 through 22 June 2018 (pp. 1079-1083). Institute of Electrical and Electronics Engineers (IEEE), Article ID 8445375.
Open this publication in new window or tab >>Realization of a Planar Power Circuit With Silicon Carbide MOSFETs on Printed Circuit Board
2018 (English)In: SPEEDAM 2018 - Proceedings: International Symposium on Power Electronics, Electrical Drives, Automation and Motion, Institute of Electrical and Electronics Engineers (IEEE), 2018, p. 1079-1083, article id 8445375Conference paper, Published paper (Refereed)
Abstract [en]

Silicon Carbide (SiC) MOSFETs offer excellent properties as switches in power converters. However, the package of the device is an issue that prevents utilizing the advantages of SiC, as for instance fast switching speed. The packages of currently available SiC devices are the same as those previously used for silicon devices with moderate electrical and thermal characteristics resulting in accelerated aging and reliability issues. Moreover, the parasitic inductance caused by the package, limits the switching time and operating frequency. By excluding the package, the parasitic inductances will be eliminated to a large extent. In this study, the procedure of manufacturing a half-bridge planar power module, using four SiC MOSFET bare dies and PCB, is described. According to simulations, the parasitic inductance Lstray of the structure is approximately 96 % lower than most commercial half-bridge modules. It is also shown that double-side cooling can be employed for the proposed module if substrates with low thermal resistance are employed.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018
Keywords
SiC MOSFET, planar power module, bare die, ultra-low parasitic inductance, double-sided cooling, PCB, DBC, high power density
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-235908 (URN)10.1109/SPEEDAM.2018.8445375 (DOI)000445031300176 ()2-s2.0-85053829415 (Scopus ID)9781538649411 (ISBN)
Conference
2018 International Symposium on Power Electronics, Electrical Drives, Automation and Motion, SPEEDAM 2018, Amalfi, Italy, 20 June 2018 through 22 June 2018
Note

QC 20181008

Available from: 2018-10-08 Created: 2018-10-08 Last updated: 2019-03-16Bibliographically approved
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ORCID iD: ORCID iD iconorcid.org/0000-0002-1755-1365

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