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Publications (10 of 231) Show all publications
Velander, E., Kruse, L. (., Wiik, T. (., Wiberg, A., Colmenares, J. & Nee, H.-P. (2018). An IGBT Turn-ON Concept Offering Low Losses Under Motor Drive dv/dt Constraints Based on Diode Current Adaption. IEEE transactions on power electronics, 33(2), 1143-1153.
Open this publication in new window or tab >>An IGBT Turn-ON Concept Offering Low Losses Under Motor Drive dv/dt Constraints Based on Diode Current Adaption
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2018 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 33, no 2, 1143-1153 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, a new low-loss turn-ON concept for the silicon insulated-gate bipolar transistor (Si-IGBT) in combination with silicon p-i-n diode is presented. The concept is tailored for two-level motor converters in the 100 kW to 1 MW range under the constraint that the output voltages slopes are limited in order to protect the motor windings. Moreover, analyses of the IGBT turn-ON and diode reverse recovery voltage slopes are presented concluding that the diode reverse recovery is the worst case. The concept includes a low-cost measurement of the free-wheeling diode current and temperature by the gate driver without necessity of acquiring this information from the converter control board. By using this concept, the output dv/dt at the diode turn-OFF can be kept approximately constant regardless of the commutated current and junction temperature. Hence, the switching losses could be decreased for the currents and temperatures where the voltage slopes are lower when using a conventional gate driver optimized for the worst case. Moreover, results are shown for one such power semiconductor, showing a total switching loss reduction of up to 28% in comparison with a gate driver without current and temperature measurement. Finally, this concept is particularly suitable for high power semiconductor modules in half-bridge configuration which are recently proposed by several suppliers.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2018
Keyword
motor drives, insulated gate bipolar transistors, power semiconductor devices
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-217925 (URN)10.1109/TPEL.2017.2688474 (DOI)000414414600025 ()
Note

QC 20171121

Available from: 2017-11-21 Created: 2017-11-21 Last updated: 2017-11-21Bibliographically approved
Krismer, F., Schroth, S., Ertl, H., Kostov, K. S., Nee, H.-P. & Kolar, J. W. (2017). Analysis and Practical Relevance of CM/DM EMI Noise Separator Characteristics. IEEE transactions on power electronics, 32(4), 3112-3127.
Open this publication in new window or tab >>Analysis and Practical Relevance of CM/DM EMI Noise Separator Characteristics
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2017 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 32, no 4, 3112-3127 p.Article in journal (Refereed) Published
Abstract [en]

This work investigates sources of measurement errors that result for common mode/differential mode (CM/DM) separators in a practical measurement environment, with a particular focus on the recently presented input impedance criterion for CM/DM separators, derives the respective analytical expressions, and employs a detailed analytical model to verify the obtained findings. Furthermore, a method is derived, which determines the worst-case measurement error by reason of cross coupling for given measured DM and CM output voltage components. Based on an example, this work illustrates how the obtained expressions can be advantageously used in a computer program to automatically decide whether a particular spectral measurement component represents a useful measurement result or if it is strongly affected by cross coupling (CM to DM and DM to CM). Finally, the paper presents the realization and accompanying experimental results of an active CM/DM separator, which allows for low realization effort and features competitive separation capabilities (DMTR/CMRR > 50 dB and CMTR/DMRR > 42 dB for frequencies up to 10 MHz).

Place, publisher, year, edition, pages
IEEE Press, 2017
Keyword
Analog processing circuits, electromagnetic compatibility, electromagnetic interference (EMI), frequency domain analysis, measurement errors, power electronics, voltage measurement
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-204051 (URN)10.1109/TPEL.2016.2579267 (DOI)000395480400055 ()2-s2.0-85011060890 (Scopus ID)
Note

QC 20170330

Available from: 2017-03-30 Created: 2017-03-30 Last updated: 2017-11-29Bibliographically approved
Nikouie Harnefors, M., Wallmark, O., Jin, L., Harnefors, L. & Nee, H.-P. (2017). DC-link stability analysis and controller design for the stacked polyphase bridges converter. IEEE transactions on power electronics, 32(2), 1666-1674, Article ID 7451258.
Open this publication in new window or tab >>DC-link stability analysis and controller design for the stacked polyphase bridges converter
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2017 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 32, no 2, 1666-1674 p., 7451258Article in journal (Refereed) Published
Abstract [en]

The stacked polyphase bridges (SPB) converter consists of several submodules that all are connected in series to a voltage source. The total dc-link voltage should split in a balanced way among the submodules. This does not always occur inherently. This paper presents an analysis of the capacitor voltage stability for the SPB converter. From the analysis, criteria for stability are derived and three alternatives of a suitable balancing controller are designed. The proposed controller alternatives and their associated stability properties are verified on an experimental setup and by simulation.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2017
Keyword
Balancing control, dc-link stability, integrated electric drive, modular converter.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-185042 (URN)10.1109/TPEL.2016.2553129 (DOI)000388867300066 ()2-s2.0-84999273776 (Scopus ID)
Note

QC 20170119

Available from: 2016-04-10 Created: 2016-04-10 Last updated: 2017-11-30Bibliographically approved
Risseh, A., Nee, H.-P. & Kostov, K. (2017). Electrical performance of directly attached SiC power MOSFET bare dies in a half-bridge configuration. In: Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia), 2017 IEEE 3rd International: . Paper presented at Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia), 2017 IEEE 3rd International, 3-7 June 2017, Kaohsiung, Taiwan. Taiwan: Institute of Electrical and Electronics Engineers (IEEE).
Open this publication in new window or tab >>Electrical performance of directly attached SiC power MOSFET bare dies in a half-bridge configuration
2017 (English)In: Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia), 2017 IEEE 3rd International, Taiwan: Institute of Electrical and Electronics Engineers (IEEE), 2017Conference paper, Published paper (Refereed)
Abstract [en]

The demand for high-efficiency power converters is increasing continuously. The switching losses are typically significant in power converters. During the switching time, the component is exposed to a considerable voltage and current causing power loss. The switching time is limited by parasitic inductance produced by traces and interconnections inside and outside the package of a device. Moreover, the parasitic inductances at the input-terminal together with the Miller capacitance generate oscillations causing instability and additional losses. In order to eliminate the package parasitic inductance, four 1.2kV SiC-MOSFET bare dies, two in parallel in each position, were directly attached to a PCB sandwich designed as a half bridge. The obtained structure forms a planar power module. From ANSYS Q3D simulations it was found that the parasitic inductance between drain and source for each transistor in the proposed planar module could be reduced 92 % compared to a TO247 package. The planar module was also tested as a dc-dc converter. Switching waveforms from these experiments are also presented.

Place, publisher, year, edition, pages
Taiwan: Institute of Electrical and Electronics Engineers (IEEE), 2017
Keyword
SiC MOSTEF, bare die, low inductive circuit, fast switching, parasitic inductance, converter, planar Module
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-211510 (URN)10.1109/IFEEC.2017.7992074 (DOI)978-1-5090-5157-1 (ISBN)
Conference
Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia), 2017 IEEE 3rd International, 3-7 June 2017, Kaohsiung, Taiwan
Note

QC 20170810

Available from: 2017-08-04 Created: 2017-08-04 Last updated: 2017-11-10Bibliographically approved
Jacobs, K., Johannesson, D., Norrga, S. & Nee, H.-P. (2017). MMC Converter Cells Employing Ultrahigh-Voltage SiC Bipolar Power Semiconductors. In: 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE EUROPE): . Paper presented at 19th European Conference on Power Electronics and Applications (EPE ECCE Europe), SEP 11-14, 2017, Warsaw, Poland. Institute of Electrical and Electronics Engineers (IEEE).
Open this publication in new window or tab >>MMC Converter Cells Employing Ultrahigh-Voltage SiC Bipolar Power Semiconductors
2017 (English)In: 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE EUROPE), Institute of Electrical and Electronics Engineers (IEEE), 2017Conference paper (Refereed)
Abstract [en]

This paper investigates the benefits of using high-voltage converter cells for transmission applications. These cells employ ultrahigh-voltage SiC bipolar power semiconductors, which are optimized for low conduction losses. The Modular Multilevel Converter with half-bridge cells is used as a test case. The results indicate a reduction of converter volume and complexity, while maintaining low losses and harmonic performance.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2017
Series
European Conference on Power Electronics and Applications, ISSN 2325-0313
Keyword
HVDC transmission, Modular multilevel converters, Silicon carbide
National Category
Energy Systems
Identifiers
urn:nbn:se:kth:diva-220864 (URN)000418374403001 ()978-9-0758-1527-6 (ISBN)
Conference
19th European Conference on Power Electronics and Applications (EPE ECCE Europe), SEP 11-14, 2017, Warsaw, Poland
Funder
SweGRIDS - Swedish Centre for Smart Grids and Energy Storage
Note

QC 20180109

Available from: 2018-01-09 Created: 2018-01-09 Last updated: 2018-01-09Bibliographically approved
Toth-Pal, Z., Zhang, Y., Hammam, T., Nee, H.-P. & Bakowski, M. (2017). Thermal improvement of Press-Pack Packages: Pressure Dependent Thermal Contact Resistance with a thin Silver Interlayer between Molybdenum substrate and Silicon Carbide chip. Paper presented at IEEE International Workshop on Integrated Power Packaging (IWIPP), APR 05-07, 2017, Delft, NETHERLANDS. 2017 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP).
Open this publication in new window or tab >>Thermal improvement of Press-Pack Packages: Pressure Dependent Thermal Contact Resistance with a thin Silver Interlayer between Molybdenum substrate and Silicon Carbide chip
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2017 (English)In: 2017 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP)Article in journal (Refereed) Published
Abstract [en]

In typical press-pack, free-floating packages the thermal contact resistance between chip and substrate is a major limiting factor for the cooling ability of the power module. We report an introduction of a new, thin Silver interlayer between Molybdenum substrate and chip, and how it improves the thermal contact. The thermal contact resistances were measured with and without a Silver interlayer at different pressures. The surface roughness of the SiC chip and the Molybdenum substrate were characterized. The thermal contact resistances were measured at three different heating power levels. The results show a significant reduction of the thermal contact resistance with only a few micrometer Silver interlayer. The improved cooling effect of a Silver interlayer was also demonstrated with a fluid dynamics type of 3 D simulation comparing temperature distributions with and without a Silver interlayer. These results project a possible thermal improvement in press-pack packages.

Place, publisher, year, edition, pages
IEEE, 2017
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-218243 (URN)10.1109/IWIPP.2017.7936753 (DOI)000414286300009 ()2-s2.0-85025660047 (Scopus ID)978-1-5090-4278-4 (ISBN)
Conference
IEEE International Workshop on Integrated Power Packaging (IWIPP), APR 05-07, 2017, Delft, NETHERLANDS
Note

QC 20171124

Available from: 2017-11-24 Created: 2017-11-24 Last updated: 2017-11-24Bibliographically approved
Zhang, H., Ängquist, L., Norrga, S., Nee, H.-P. & Östlund, S. (2016). Benchmark of high-power STATCOM topologies for flicker compensation. In: 2016 18TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'16 ECCE EUROPE): . Paper presented at 18th European Conference on Power Electronics and Applications (EPE), SEP 05-09, 2016, GERMANY. IEEE.
Open this publication in new window or tab >>Benchmark of high-power STATCOM topologies for flicker compensation
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2016 (English)In: 2016 18TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'16 ECCE EUROPE), IEEE, 2016Conference paper, Published paper (Refereed)
Abstract [en]

The current from an electrical arc furnace (EAF) in a steel plant is highly unsymmetrical, i.e. it comprises a large amount of negative sequence. This causes problems with the voltage stability in the capacitor submodules for a static synchronous compensator (STATCOM), when implemented using the modular multilevel converter (M2C) concept. In order to counteract the uncontrollability of the capacitor voltage, a common practice is to circulate a zero-sequence fundamental current or a direct current. The method brings the benefit of re-balancing the active power among the individual phases while it requires over-rating of the valve current or dc voltage of the STATCOM. This would in practice give a more expensive design. This paper presents a benchmark of various M2C-based STATCOM designs considering the valve overrating. The STATCOM topologies will be benchmarked with the EAF modeled for all possible combinations of positive-and negative-sequence current. The rating comparison considering the dc capacitor ripple and zero-sequence harmonic injection are discussed.

Place, publisher, year, edition, pages
IEEE, 2016
Series
European Conference on Power Electronics and Applications, ISSN 2325-0313
Keyword
Static Synchronous Compensator (STATCOM), Multilevel Converters
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-197014 (URN)10.1109/EPE.2016.7695478 (DOI)000386637300227 ()2-s2.0-84996791605 (Scopus ID)
Conference
18th European Conference on Power Electronics and Applications (EPE), SEP 05-09, 2016, GERMANY
Note

QC 20161209

Available from: 2016-12-09 Created: 2016-11-28 Last updated: 2017-02-28Bibliographically approved
Sharifabadi, K., Harnefors, L., Nee, H.-P., Norrga, S. & Teodorescu, R. (2016). Design, control and application of modular multilevel converters for HVDC transmission systems. wiley.
Open this publication in new window or tab >>Design, control and application of modular multilevel converters for HVDC transmission systems
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2016 (English)Book (Other academic)
Abstract [en]

Design, Control and Application of Modular Multilevel Converters for HVDC Transmission Systems is a comprehensive guide to semiconductor technologies applicable for MMC design, component sizing control, modulation, and application of the MMC technology for HVDC transmission. Separated into three distinct parts, the first offers an overview of MMC technology, including information on converter component sizing, Control and Communication, Protection and Fault Management, and Generic Modelling and Simulation. The second covers the applications of MMC in offshore WPP, including planning, technical and economic requirements and optimization options, fault management, dynamic and transient stability. Finally, the third chapter explores the applications of MMC in HVDC transmission and Multi Terminal configurations, including Supergrids. Key features: Unique coverage of the offshore application and optimization of MMC-HVDC schemes for the export of offshore wind energy to the mainland. Comprehensive explanation of MMC application in HVDC and MTDC transmission technology. Detailed description of MMC components, control and modulation, different modeling approaches, converter dynamics under steady-state and fault contingencies including application and housing of MMC in HVDC schemes for onshore and offshore. Analysis of DC fault detection and protection technologies, system studies required for the integration of HVDC terminals to offshore wind power plants, and commissioning procedures for onshore and offshore HVDC terminals. A set of self-explanatory simulation models for HVDC test cases is available to download from the companion website. This book provides essential reading for graduate students and researchers, as well as field engineers and professionals who require an in-depth understanding of MMC technology.

Place, publisher, year, edition, pages
wiley, 2016
Series
Design, Control and Application of Modular Multilevel Converters for HVDC Transmission Systems
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-207492 (URN)10.1002/9781118851555 (DOI)2-s2.0-85017365122 (Scopus ID)9781118851555 (ISBN)9781118851562 (ISBN)
Note

Export Date: 22 May 2017; Book; Correspondence Address: Sharifabadi, K.; Research and Technology, Statoil ASA, Norway. QC 20170612

Available from: 2017-06-12 Created: 2017-06-12 Last updated: 2017-06-12Bibliographically approved
Ahmed, N., Ängquist, L., Mehmood, S., Antonopoulos, A., Harnefors, L., Norrga, S. & Nee, H.-P. (2016). Efficient Modeling of an MMC-Based Multiterminal DC System Employing Hybrid HVDC Breakers. In: 2016 IEEE POWER AND ENERGY SOCIETY GENERAL MEETING (PESGM): . Paper presented at IEEE-Power-and-Energy-Society General Meeting (PESGM), JUL 17-21, 2016, Boston, MA. IEEE.
Open this publication in new window or tab >>Efficient Modeling of an MMC-Based Multiterminal DC System Employing Hybrid HVDC Breakers
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2016 (English)In: 2016 IEEE POWER AND ENERGY SOCIETY GENERAL MEETING (PESGM), IEEE , 2016Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
IEEE, 2016
Series
IEEE Power and Energy Society General Meeting PESGM, ISSN 1944-9925
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-209094 (URN)000399937902157 ()978-1-5090-4168-8 (ISBN)
Conference
IEEE-Power-and-Energy-Society General Meeting (PESGM), JUL 17-21, 2016, Boston, MA
Note

QC 20170619

Available from: 2017-06-19 Created: 2017-06-19 Last updated: 2017-06-19Bibliographically approved
Colmenares, J., Kargarrazi, S., Elahipanah, H., Nee, H.-P. & Zetterling, C.-M. (2016). High-Temperature Passive Components for Extreme Environments. In: 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA): . Paper presented at 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), NOV 07-09, 2016, Fayetteville, AR (pp. 271-274). IEEE conference proceedings.
Open this publication in new window or tab >>High-Temperature Passive Components for Extreme Environments
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2016 (English)In: 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), IEEE conference proceedings, 2016, 271-274 p.Conference paper, Published paper (Refereed)
Abstract [en]

Silicon carbide is an excellent candidate when high temperature power electronics applications are considered. Integrated circuits as well as several power devices have been tested at high temperature. However, little attention has been paid to high temperature passive components that could enable the full SiC potential. In this work, the high-temperature performances of different passive components have been studied. Integrated capacitors in bipolar SiC technology have been tested up to 300 degrees C and, three different designs of inductors have been tested up to 700 degrees C.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2016
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-201295 (URN)10.1109/WiPDA.2016.7799951 (DOI)000392116100052 ()2-s2.0-85010695875 (Scopus ID)978-1-5090-1576-4 (ISBN)
Conference
4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), NOV 07-09, 2016, Fayetteville, AR
Note

QC 20170214

Available from: 2017-02-14 Created: 2017-02-14 Last updated: 2017-02-14Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-1755-1365

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