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BETA
Zetterling, Carl-MikaelORCID iD iconorcid.org/0000-0001-8108-2631
Alternative names
Publications (10 of 186) Show all publications
Hou, S., Hellström, P.-E., Zetterling, C.-M. & Östling, M. (2018). Scaling and Modeling of High Temperature 4H-SiC p-i-n Photodiodes. IEEE Journal of the Electron Devices Society, 6(1), 139-145.
Open this publication in new window or tab >>Scaling and Modeling of High Temperature 4H-SiC p-i-n Photodiodes
2018 (English)In: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 6, no 1, p. 139-145Article in journal (Refereed) Published
Abstract [en]

4H-SiC p-i-n photodiodes with various mesa areas (40 000 mu m(2), 2500 mu m(2), 1600 mu m(2), and 400 mu m(2)) have been fabricated. Both C-V and I-V characteristics of the photodiodes have been measured at room temperature, 200 degrees C, 400 degrees C, and 500 degrees C. The capacitance and photo current (at 365 nm) of the photodiodes are directly proportional to the area. However, the dark current density increases as the device is scaled down due to the perimeter surface recombination effect. The photo to dark current ratio at the full depletion voltage of the intrinsic layer (-2.7 V) of the photodiode at 500 degrees C decreases similar to 7 times as the size of the photodiode scales down 100 times. The static and dynamic behavior of the photodiodes are modeled with SPICE parameters at the four temperatures.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2018
Keyword
4H-SiC, photodiode, high temperature, scaling
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-222398 (URN)10.1109/JEDS.2017.2785618 (DOI)000423582900022 ()
Note

QC 20180223

Available from: 2018-02-23 Created: 2018-02-23 Last updated: 2018-02-23Bibliographically approved
Salemi, A., Elahipanah, H., Zetterling, C.-M. & Östling, M. (2017). 10+ kV implantation-free 4H-SiC PiN diodes. In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016: . Paper presented at 25 September 2016 through 29 September 2016 (pp. 423-426). Trans Tech Publications Ltd.
Open this publication in new window or tab >>10+ kV implantation-free 4H-SiC PiN diodes
2017 (English)In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Trans Tech Publications Ltd , 2017, p. 423-426Conference paper (Refereed)
Abstract [en]

Implantation-free mesa etched 10+ kV 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. An area-optimized junction termination extension (O-JTE) is implemented in order to achieve a high breakdown voltage. The diodes design allows a high breakdown voltage of about 19.3 kV according to simulations by Sentaurus TCAD. No breakdown voltage is recorded up to 10 kV with a very low leakage current of 0.1 μA. The current spreading within the thick drift layer is considered and a voltage drop (VF) of 8.3 V and 11.4 V are measured at 50 A/cm2 and 100 A/cm2, respectively. The differential on-resistance (Diff. Ron) of 67.7 mΩ.cm2 and 55.7 mΩ.cm2 are measured at 50 A/cm2 and 100 A/cm2, respectively.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd, 2017
Keyword
Conductivity modulation, Differential on-resistance, Forward voltage drop, Implantation-free, PiN diode, Ultra-high-voltage
National Category
Materials Engineering
Identifiers
urn:nbn:se:kth:diva-216561 (URN)10.4028/www.scientific.net/MSF.897.423 (DOI)2-s2.0-85019990289 (Scopus ID)9783035710434 (ISBN)
Conference
25 September 2016 through 29 September 2016
Note

QC 20171108

Available from: 2017-11-08 Created: 2017-11-08 Last updated: 2017-11-08Bibliographically approved
Hou, S., Hellström, P.-E., Zetterling, C.-M. & Östling, M. (2017). 4H-SiC PIN diode as high temperature multifunction sensor. In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016: . Paper presented at 25 September 2016 through 29 September 2016 (pp. 630-633). Trans Tech Publications Ltd.
Open this publication in new window or tab >>4H-SiC PIN diode as high temperature multifunction sensor
2017 (English)In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Trans Tech Publications Ltd , 2017, p. 630-633Conference paper (Refereed)
Abstract [en]

An in-house fabricated 4H-SiC PIN diode that has both optical sensing and temperature sensing functions from room temperature (RT) to 550 ºC is presented. The two sensing functions can be simply converted from one to the other by switching the bias voltage on the diode. The optical responsivity of the diode at 365 nm is 31.8 mA/W at 550 ºC. The temperature sensitivity of the diode is 2.7 mV/ºC at the forward current of 1 μA.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd, 2017
Keyword
4H-SiC, High Temperature, PIN Diode, Sensor
National Category
Materials Engineering
Identifiers
urn:nbn:se:kth:diva-216564 (URN)10.4028/www.scientific.net/MSF.897.630 (DOI)2-s2.0-85020034685 (Scopus ID)9783035710434 (ISBN)
Conference
25 September 2016 through 29 September 2016
Note

QC 20171108

Available from: 2017-11-08 Created: 2017-11-08 Last updated: 2017-11-08Bibliographically approved
Elahipanah, H., Kargarrazi, S., Salemi, A., Östling, M. & Zetterling, C.-M. (2017). 500 degrees C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits. IEEE Electron Device Letters, 38(10), 1429-1432.
Open this publication in new window or tab >>500 degrees C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits
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2017 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 38, no 10, p. 1429-1432Article in journal (Refereed) Published
Abstract [en]

High-current 4H-SiC lateral BJTs for hightemperature monolithic integrated circuits are fabricated. The BJTs have three different sizes and the designs are optimized in terms of emitter finger width and length and the device layout to have higher current density (J(C)), lower on-resistance (R-ON), and more uniform current distribution. A maximum current gain (beta) of >53 at significantly high current density was achieved for different sizes of SiC BJTs. The BJTs aremeasured fromroom temperature to 500 degrees C. An open-base breakdown voltage (V-CEO) of > 50 V is measured for the devices.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2017
Keyword
4H-SiC, lateral BJT, high-current, monolithic integrated circuit
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-217444 (URN)10.1109/LED.2017.2737558 (DOI)000413760600019 ()
Note

QC 20171117

Available from: 2017-11-17 Created: 2017-11-17 Last updated: 2017-11-17Bibliographically approved
Elahipanah, H., Asadollahi, A., Ekström, M., Salemi, A., Zetterling, C.-M. & Östling, M. (2017). A wafer-scale Ni-salicide contact technology on n-type 4H-SiC. ECS Journal of Solid State Science and Technology, 6(4), P197-P200.
Open this publication in new window or tab >>A wafer-scale Ni-salicide contact technology on n-type 4H-SiC
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2017 (English)In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, E-ISSN 2162-8777, Vol. 6, no 4, p. P197-P200Article in journal (Refereed) Published
Abstract [en]

A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed on wafer-level and a contact resistivity below 5 × 10−6 Ω · cm2 is achieved. The influence of the proposed process on the oxide quality is investigated and no significant effect is observed. The proposed self-aligned technology eliminates the undesirable effects of the lift-off process. Moreover, it is simple, fast, and manufacturable at wafer-scale which saves time and cost.

Place, publisher, year, edition, pages
Electrochemical Society, 2017
National Category
Other Engineering and Technologies
Identifiers
urn:nbn:se:kth:diva-219898 (URN)10.1149/2.0041705jss (DOI)000418886800004 ()2-s2.0-85036466021 (Scopus ID)
Note

QC 20171215

Available from: 2017-12-15 Created: 2017-12-15 Last updated: 2018-01-11Bibliographically approved
Nathan, A., Pavan, P. & Zetterling, C.-M. (2017). Editorial EIC. IEEE Journal of the Electron Devices Society, 5(3), 147-148, Article ID 7911398.
Open this publication in new window or tab >>Editorial EIC
2017 (English)In: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 5, no 3, p. 147-148, article id 7911398Article in journal (Refereed) Published
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc., 2017
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-216510 (URN)10.1109/JEDS.2017.2690078 (DOI)000400480000001 ()2-s2.0-85019579729 (Scopus ID)
Note

QC 20171201

Available from: 2017-12-01 Created: 2017-12-01 Last updated: 2017-12-01Bibliographically approved
Ekström, M., Khartsev, S., Östling, M. & Zetterling, C.-M. (2017). Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide. Journal of Electronic Materials, 46(7), 4478-4484.
Open this publication in new window or tab >>Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide
2017 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 46, no 7, p. 4478-4484Article in journal (Refereed) Published
Abstract [en]

4H-SiC electronics can operate at high temperature (HT), e.g., 300A degrees C to 500A degrees C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P-E hysteresis loops measured at room temperature showed maximum 2P (r) of 48 mu C/cm(2), large enough for wide read margins. P-E loops were measurable up to 450A degrees C, with losses limiting measurements above 450A degrees C. The phase-transition temperature was determined to be about 660A degrees C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

Place, publisher, year, edition, pages
SPRINGER, 2017
Keyword
Ferroelectric, high temperature (HT), memory device, silicon carbide (4H-SiC), thin film, vanadium-doped bismuth titanate (BiTV)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-210461 (URN)10.1007/s11664-017-5447-3 (DOI)000403016800089 ()2-s2.0-85015704004 (Scopus ID)
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20170706

Available from: 2017-07-06 Created: 2017-07-06 Last updated: 2017-07-06Bibliographically approved
Suvanam, S. S., Lanni, L., Malm, B. G., Zetterling, C.-M. & Hallén, A. (2017). Total Dose Effects on 4H-SiC Bipolar Junction Transistors. In: : . Paper presented at European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM-16). Material science Forum.
Open this publication in new window or tab >>Total Dose Effects on 4H-SiC Bipolar Junction Transistors
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2017 (English)Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
Material science Forum, 2017
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-199903 (URN)10.4028/www.scientific.net/MSF.897.579 (DOI)2-s2.0-85020007905 (Scopus ID)
Conference
European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM-16)
Note

QC 20170201

Available from: 2017-01-17 Created: 2017-01-17 Last updated: 2017-10-23Bibliographically approved
Kargarrazi, S., Lanni, L. & Zetterling, C.-M. (2016). A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier. Solid-State Electronics, 116, 33-37.
Open this publication in new window or tab >>A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier
2016 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 116, p. 33-37Article in journal (Refereed) Published
Abstract [en]

This paper reports on the design and implementation of an integrated operational amplifier in bipolar SiC, and elaborates on its operation in positive-feedback configuration. The opamp is studied in different feedback setups: closed-loop compensated amplifier, comparator with hysteresis (Schmitt trigger), and as a relaxation oscillator. Measurement results suggest a stable closed-loop opamp with similar to 40 dB gain, a Schmitt trigger with constant threshold levels over a wide temperature range, and a relaxation oscillator tested up to 540 kHz. All the setups were tested from 25 degrees C up to 500 degrees C.

Place, publisher, year, edition, pages
Elsevier, 2016
Keyword
Silicon carbide, Integrated circuit, High temperature, Operational amplifier, Oscillator
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-180959 (URN)10.1016/j.sse.2015.11.028 (DOI)000367542100007 ()2-s2.0-84949504616 (Scopus ID)
Note

QC 20160129

Available from: 2016-01-29 Created: 2016-01-26 Last updated: 2017-11-30Bibliographically approved
Kuroki, S. I., Nagatsuma, H., de Silva, M., Ishikawa, S., Maeda, T., Sezaki, H., . . . Zetterling, C.-M. (2016). Characterization of 4H-SiC nMOSFETs in harsh environments, high-temperature and high gamma-ray radiation. In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015: . Paper presented at 4 October 2015 through 9 October 2015 (pp. 864-867). Trans Tech Publications Ltd.
Open this publication in new window or tab >>Characterization of 4H-SiC nMOSFETs in harsh environments, high-temperature and high gamma-ray radiation
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2016 (English)In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Trans Tech Publications Ltd , 2016, p. 864-867Conference paper, Published paper (Refereed)
Abstract [en]

Characteristics of 4H-SiC nMOSFETs with arsenic-doped S/D and NbNi silicide contacts in harsh environments of high-temperature up to 450°C, and high gamma-ray radiation up to over 100 Mrad, were investigated. At high temperature, field effect mobility increased as proportional to T3/2, and threshold voltage was shifted with temperature coefficients of -4.3 mV/K and -2.6 mV/K for oxide thicknesses of 10 nm and 20 nm, respectively. After Co60 gamma-ray exposure of 113 Mrad, the field effect mobility was varied within 8% for oxide thickness of 10 nm, however for 20 nm oxide thickness, this variation was 26%. The threshold voltage shifts were within 6%.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd, 2016
Keyword
High gamma-ray radiation, High-temperature, SiC-nMOSFET, Characterization, Electric breakdown, MOSFET devices, Silicides, Silicon carbide, Threshold voltage, Field-effect mobilities, Gamma ray radiation, Gamma-ray exposure, Harsh environment, High temperature, NMOSFET, Temperature coefficient, Threshold voltage shifts, Gamma rays
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-195447 (URN)10.4028/www.scientific.net/MSF.858.864 (DOI)2-s2.0-84971577076 (Scopus ID)9783035710427 (ISBN)
Conference
4 October 2015 through 9 October 2015
Note

QC 20161128

Available from: 2016-11-28 Created: 2016-11-03 Last updated: 2016-11-28Bibliographically approved
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ORCID iD: ORCID iD iconorcid.org/0000-0001-8108-2631

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