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Publications (10 of 105) Show all publications
Zhou, W., Liu, S.-C., Ge, X., Zhao, D., Yang, H., Reuterskiöld-Hedlund, C. & Hammar, M. (2019). On-Chip Photonic Crystal Surface-Emitting Membrane Lasers. IEEE Journal of Selected Topics in Quantum Electronics, 25(3), Article ID 4900211.
Open this publication in new window or tab >>On-Chip Photonic Crystal Surface-Emitting Membrane Lasers
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2019 (English)In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 25, no 3, article id 4900211Article in journal (Refereed) Published
Abstract [en]

Photonic crystal lasers can be realized either based on photonic bandgap defect mode or defect-free bandedge mode, while the bandgap is not essential for the latter. We review here defect-free bandedge mode based photonic crystal surface-emitting lasers (PCSELs) for on-chip integration. We first discuss ultra-thin membrane reflector vertical-cavity surface-emitting lasers (MR-VCSELs), where single layer photonic crystal slabs can be designed as a broadband membrane reflector. Later, we discuss another type of defect-free PCSELs where the lasing cavity is formed based on evanescent coupling of gain medium with the photonic crystal bandedge mode near bandedge. Cavity designs were carried out for the optimal modal overlap and high confinement factors. Lateral cavity size scaling was also investigated both theoretically and experimentally in PCSELs. Buried tunnel junction based InGaAsP quantum well heterostructures were also designed and incorporated into electrically injected PCSELs. Finally, discussions are given toward energy efficient lasers.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2019
Keywords
Heterogeneous integration, photonic crystals, silicon photonics, surface-emitting lasers
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-251197 (URN)10.1109/JSTQE.2019.2902904 (DOI)000464754300001 ()2-s2.0-85064629686 (Scopus ID)
Note

QC 20190523

Available from: 2019-05-23 Created: 2019-05-23 Last updated: 2019-05-29Bibliographically approved
Gyger, S., Zeuner, K. D., Jöns, K. D., Elshaari, A. W., Paul, M., Popov, S., . . . Zwiller, V. (2019). Reconfigurable frequency coding of triggered single photons in the telecom C-band. Optics Express, 27(10), 14400-14406
Open this publication in new window or tab >>Reconfigurable frequency coding of triggered single photons in the telecom C-band
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2019 (English)In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 27, no 10, p. 14400-14406Article in journal (Refereed) Published
Abstract [en]

In this work, we demonstrate reconfigurable frequency manipulation of quantum states of light in the telecom C-band. Triggered single photons are encoded in a superposition state of three channels using sidebands up to 53 GHz created by an off-the-shelf phase modulator. The single photons are emitted by an InAs/GaAs quantum dot grown by metal-organic vapor-phase epitaxy within the transparency window of the backbone fiber optical network. A cross-correlation measurement of the sidebands demonstrates the preservation of the single photon nature; an important prerequisite for future quantum technology applications using the existing telecommunication fiber network.

Place, publisher, year, edition, pages
Optical Society of America, 2019
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-253738 (URN)10.1364/OE.27.014400 (DOI)000469220500072 ()31163890 (PubMedID)2-s2.0-85065830027 (Scopus ID)
Note

QC 20190617

Available from: 2019-06-17 Created: 2019-06-17 Last updated: 2019-10-14Bibliographically approved
Zeuner, K. D., Paul, M., Lettner, T., Reuterskiold Hedlund, C., Schweickert, L., Steinhauer, S., . . . Zwiller, V. (2018). A stable wavelength-tunable triggered source of single photons and cascaded photon pairs at the telecom C-band. Applied Physics Letters, 112(17), Article ID 173102.
Open this publication in new window or tab >>A stable wavelength-tunable triggered source of single photons and cascaded photon pairs at the telecom C-band
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2018 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, no 17, article id 173102Article in journal (Refereed) Published
Abstract [en]

The implementation of fiber-based long-range quantum communication requires tunable sources of single photons at the telecom C-band. Stable and easy-to-implement wavelength-tunability of individual sources is crucial to (i) bring remote sources into resonance, (ii) define a wavelength standard, and (iii) ensure scalability to operate a quantum repeater. So far, the most promising sources for true, telecom single photons are semiconductor quantum dots, due to their ability to deterministically and reliably emit single and entangled photons. However, the required wavelength-tunability is hard to attain. Here, we show a stable wavelength-tunable quantum light source by integrating strain-released InAs quantum dots on piezoelectric substrates. We present triggered single-photon emission at 1.55 mu m with a multi-photon emission probability as low as 0.097, as well as photon pair emission from the radiative biexciton-exciton cascade. We achieve a tuning range of 0.25 nm which will allow us to spectrally overlap remote quantum dots or tuning distant quantum dots into resonance with quantum memories. This opens up realistic avenues for the implementation of photonic quantum information processing applications at telecom wavelengths. 

Place, publisher, year, edition, pages
AMER INST PHYSICS, 2018
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-227769 (URN)10.1063/1.5021483 (DOI)000431072800036 ()2-s2.0-85046072975 (Scopus ID)
Funder
Swedish Research Council, 638-2013-7152VINNOVA
Note

QC 20180514

Available from: 2018-05-14 Created: 2018-05-14 Last updated: 2018-05-14Bibliographically approved
Liu, S.-C. -., Zhao, D., Reuterskiold-Hedlund, C., Liu, Z., Hammar, M. & Zhou, W. (2018). Electrically pumped hybrid III-V/Si photonic crystal surface emitting lasers with buried tunnel-junction. In: Optics InfoBase Conference Papers: . Paper presented at CLEO: Science and Innovations, CLEO_SI 2018, 13 May 2018 through 18 May 2018. Optical Society of America
Open this publication in new window or tab >>Electrically pumped hybrid III-V/Si photonic crystal surface emitting lasers with buried tunnel-junction
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2018 (English)In: Optics InfoBase Conference Papers, Optical Society of America, 2018Conference paper, Published paper (Refereed)
Abstract [en]

We report here an electrically pumped hybrid photonic crystal surface emitting laser (PCSELs) on silicon. The laser cavity consists of a transferred InGaAsP multi-quantum well (MQW) heterostructure membrane, printed on a single layer silicon photonic crystal (Si-PC) cavity. A buried tunnel-junction (BTJ) has been employed in the MQW structure for efficiency charge injection. Single mode emitted spectrum was achieved at 1504 nm for a large area laser in the continuous-wave (c.w.) mode under room temperature operation.

Place, publisher, year, edition, pages
Optical Society of America, 2018
Keywords
III-V semiconductors, Photonic crystals, Photonic devices, Quantum well lasers, Semiconductor alloys, Semiconductor quantum wells, Silicon compounds, Silicon photonics, Surface emitting lasers, Tunnel junctions, Buried tunnel junction, Continuous wave (c.w.), Crystal surfaces, Electrically pumped, Emitted spectrum, Hybrid photonic crystals, Multiquantum wells, Room-temperature operation, Pumping (laser)
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-236427 (URN)10.1364/CLEO_SI.2018.SW3Q.5 (DOI)2-s2.0-85048942949 (Scopus ID)9781557528209 (ISBN)
Conference
CLEO: Science and Innovations, CLEO_SI 2018, 13 May 2018 through 18 May 2018
Note

QC 20181026

Available from: 2018-10-26 Created: 2018-10-26 Last updated: 2018-10-26Bibliographically approved
Liu, S.-C., Zhao, D., Ge, X., Reuterskiöld-Hedlund, C., Hammar, M., Fan, S., . . . Zhou, W. (2018). Size Scaling of Photonic Crystal Surface Emitting Lasers on Silicon Substrates. IEEE Photonics Journal, 10(3), Article ID 4500506.
Open this publication in new window or tab >>Size Scaling of Photonic Crystal Surface Emitting Lasers on Silicon Substrates
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2018 (English)In: IEEE Photonics Journal, ISSN 1097-5764, E-ISSN 1943-0655, Vol. 10, no 3, article id 4500506Article in journal (Refereed) Published
Abstract [en]

We report here the lateral cavity size scaling and confinement effects on the lasing performance in defect-free photonic crystal surface-emitting lasers (PCSEL) on silicon substrates Hybrid PCSELs with different lateral cavity sizes and different lateral confinement geometries have been fabricated using transfer printing technology and controlled selective etching The measured lasing properties show a strong dependence on the lateral cavity size below 100 mu m. In particular, the finite lateral dimension significantly affects the laser threshold and side mode suppression ratio (SMSR) of the PCSEL devices On the other hand, by controlling the lateral confinement using vertical etching, a reduction of the laser threshold is observed The experimental results agree well with theoretical predictions The work presented here can lead to ultra-compact PCSELs for on-chip integration with excellent energy efficiency.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018
Keywords
Photonic crystals, silicon photonics, lasers, heterogeneous
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-229005 (URN)10.1109/JPHOT.2018.2829900 (DOI)000432477300001 ()2-s2.0-85046337132 (Scopus ID)
Funder
Swedish Research Council
Note

QC 20180531

Available from: 2018-05-31 Created: 2018-05-31 Last updated: 2018-05-31Bibliographically approved
Reuterskiold Hedlund, C., Oberg, O., Lim, J.-K., Wang, Q., Salter, M. & Hammar, M. (2018). Trench-Confined InP-Based Epitaxial Regrowth Using Metal-Organic Vapor-Phase Epitaxy. Paper presented at Compound Semiconductor Week (CSW), MAY 14-18, 2017, Berlin, GERMANY. Physica Status Solidi (a) applications and materials science, 215(8), Article ID 1700454.
Open this publication in new window or tab >>Trench-Confined InP-Based Epitaxial Regrowth Using Metal-Organic Vapor-Phase Epitaxy
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2018 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 215, no 8, article id 1700454Article in journal (Refereed) Published
Abstract [en]

In this study, an area-selective metal-organic vapor-phase epitaxy (MOVPE) for trench-confined InP-based epitaxial regrowth in-between arrayed rectangular-shaped device elements is reported. Test structures are fabricated to investigate the influence of MOVPE growth and other processing parameters on regrowth control, doping incorporation, and morphology. For correctly chosen crystallographic mesa orientation and mask geometry, good control of growth selectivity, layer morphology, and doping concentration can be achieved, although with an enhanced and non-constant growth rate. This is discussed in terms of orientation-dependent growth rate and loading effects. In addition, a selective etch and regrowth approach which allows for the processing of field-effect transistors of significance for spatial light modulators with trench-integrated driver electronics is successfully implemented.

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH, 2018
Keywords
InP, metal-organic vapor-phase epitaxy, patterned substrate epitaxy, spatial light modulator
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-227772 (URN)10.1002/pssa.201700454 (DOI)000430922700016 ()2-s2.0-85040201992 (Scopus ID)
Conference
Compound Semiconductor Week (CSW), MAY 14-18, 2017, Berlin, GERMANY
Note

QC 20180514

Available from: 2018-05-14 Created: 2018-05-14 Last updated: 2018-05-14Bibliographically approved
Liu, S.-C., Zhao, D., Liu, Y., Yang, H., Reuterskiöld-Hedlund, C., Hammar, M., . . . Zhou, W. (2017). Photonic Crystal Surface-Emitting Lasers on Silicon Substrates. In: 2017 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM): . Paper presented at 2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017; San Juan Marriott Resort, San Juan; Puerto Rico; 10 July 2017 through 12 July 2017 (pp. 77-78). Institute of Electrical and Electronics Engineers (IEEE)
Open this publication in new window or tab >>Photonic Crystal Surface-Emitting Lasers on Silicon Substrates
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2017 (English)In: 2017 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM), Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 77-78Conference paper, Published paper (Refereed)
Abstract [en]

We report here photonic crystal surface emitting lasers on bulk silicon substrates. Optically pumped lasers were demonstrated with single mode operation. Thermal resistance of such oxide-free cavity was investigated to evaluate the heat dissipation and lasing characteristics.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2017
National Category
Communication Systems
Identifiers
urn:nbn:se:kth:diva-243631 (URN)10.1109/PHOSST.2017.8012658 (DOI)000426873700038 ()2-s2.0-85029363351 (Scopus ID)9781509065707 (ISBN)
Conference
2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017; San Juan Marriott Resort, San Juan; Puerto Rico; 10 July 2017 through 12 July 2017
Note

QC 20190211

Available from: 2019-02-11 Created: 2019-02-11 Last updated: 2019-02-11Bibliographically approved
Menon, L., Yang, H., Cho, S. J., Mikael, S., Ma, Z., Reuterskiöld-Hedlund, C., . . . Zhou, W. (2016). Heterogeneously Integrated InGaAs and Si Membrane Four-Color Photodetector Arrays. IEEE Photonics Journal, 8(2), Article ID 7445929.
Open this publication in new window or tab >>Heterogeneously Integrated InGaAs and Si Membrane Four-Color Photodetector Arrays
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2016 (English)In: IEEE Photonics Journal, ISSN 1097-5764, E-ISSN 1943-0655, Vol. 8, no 2, article id 7445929Article in journal (Refereed) Published
Abstract [en]

We report the design and fabrication of heterogeneously integrated silicon and InGaAs membrane photodetector arrays. Visible and near-infrared (NIR) detection can be achieved by transfer printing a silicon membrane on InGaAs substrate. Based on the penetration-depth-dependent absorption of different wavelengths, filter-free visible color detection can be obtained via three-junction photocurrent measurement for silicon, and NIR can be detected by InGaAs. The measurements show good agreement with the optical behavior predicted by the design and simulation.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2016
Keywords
Heterogeneous, imager, near-infrared (NIR), photodetector arrays, visible.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-187202 (URN)10.1109/JPHOT.2016.2544545 (DOI)000388089100042 ()2-s2.0-84964339359 (Scopus ID)
Note

QC 20160518

Available from: 2016-05-18 Created: 2016-05-18 Last updated: 2017-11-30Bibliographically approved
Zhao, D., Liu, S., Yang, H., Ma, Z., Reuterskiöld-Hedlund, C., Hammar, M. & Zhou, W. (2016). Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon. Scientific Reports, 6
Open this publication in new window or tab >>Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon
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2016 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 6Article in journal (Refereed) Published
Abstract [en]

We report here an optically pumped hybrid III-V/Si photoic crystal surface emitting laser (PCSEL), consisting of a heterogeneously integrated III-V InGaAsP quantum well heterostructure gain medium, printed on a patterned defect-free Si photonic crystal (PC) bandedge cavity. Single mode lasing was achieved for a large area laser, with a side-mode suppression ratio of 28 dB, for lasing operation temperature ∼200 K. Two types of lasers were demonstrated operating at different temperatures. Detailed modal analysis reveals the lasing mode matches with the estimated lasing gain threshold conditions. Our demonstration promises a hybrid laser sources on Si towards three-dimensional (3D) integrated Si photonics for on-chip wavelength-division multiplex (3D WDM) systems for a wide range of volume photonic/electronic applications in computing, communication, sensing, imaging, etc.

Place, publisher, year, edition, pages
Nature Publishing Group, 2016
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-181445 (URN)10.1038/srep18860 (DOI)000391974800001 ()26727551 (PubMedID)2-s2.0-84953234838 (Scopus ID)
Note

QC 20160204

Available from: 2016-02-04 Created: 2016-02-02 Last updated: 2019-09-30Bibliographically approved
Liu, S.-C., Zhao, D., Yang, H., Ma, Z., Reuterskiold-Hedlund, C., Hammar, M. & Zhou, W. (2016). Room Temperature Photonic Crystal Bandedge Membrane Lasers on SOI Substrates. In: 2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO): . Paper presented at Conference on Lasers and Electro-Optics (CLEO), JUN 05-10, 2016, San Jose, CA. IEEE conference proceedings
Open this publication in new window or tab >>Room Temperature Photonic Crystal Bandedge Membrane Lasers on SOI Substrates
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2016 (English)In: 2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), IEEE conference proceedings, 2016Conference paper, Published paper (Refereed)
Abstract [en]

We report the experimental demonstration of room temperature photonics crystal (PC) bandedge membrane lasers on silicon based on the transfer printing technique. Single mode lasing was observed with linewidth of 4 angstrom and side-mode suppression ratio (SMSR) greater than 31.5 dB.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2016
Series
Conference on Lasers and Electro-Optics, ISSN 2160-9020
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-201288 (URN)000391286401286 ()2-s2.0-85010702958 (Scopus ID)978-1-9435-8011-8 (ISBN)
Conference
Conference on Lasers and Electro-Optics (CLEO), JUN 05-10, 2016, San Jose, CA
Note

QC 20170215

Available from: 2017-02-15 Created: 2017-02-15 Last updated: 2017-02-15Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-9040-4740

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