Change search
Link to record
Permanent link

Direct link
BETA
Alternative names
Publications (10 of 38) Show all publications
Sun, Y.-T. & Lourdudoss, S. (2019). Epitaxial lateral overgrowth of III-V semiconductors on Si for photonic integration. In: Lourdudoss, S Bowers, JE Jagadish, C (Ed.), FUTURE DIRECTIONS IN SILICON PHOTONICS: (pp. 163-200). ELSEVIER ACADEMIC PRESS INC
Open this publication in new window or tab >>Epitaxial lateral overgrowth of III-V semiconductors on Si for photonic integration
2019 (English)In: FUTURE DIRECTIONS IN SILICON PHOTONICS / [ed] Lourdudoss, S Bowers, JE Jagadish, C, ELSEVIER ACADEMIC PRESS INC , 2019, p. 163-200Chapter in book (Refereed)
Place, publisher, year, edition, pages
ELSEVIER ACADEMIC PRESS INC, 2019
Series
Semiconductors and Semimetals, ISSN 0080-8784 ; 101
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-261342 (URN)10.1016/bs.semsem.2019.07.004 (DOI)000486568000006 ()2-s2.0-85070354997 (Scopus ID)978-0-12-820518-1 (ISBN)978-0-12-818857-6 (ISBN)
Note

QC 20191007

Available from: 2019-10-07 Created: 2019-10-07 Last updated: 2019-10-07Bibliographically approved
Wang, Z., Liang, Y., Meng, B., Sun, Y.-T., Omanakuttan, G., Gini, E., . . . Scalari, G. (2019). Large area photonic crystal quantum cascade laser with 5 W surface-emitting power. Optics Express, 27(16), 22708-22716
Open this publication in new window or tab >>Large area photonic crystal quantum cascade laser with 5 W surface-emitting power
Show others...
2019 (English)In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 27, no 16, p. 22708-22716Article in journal (Refereed) Published
Abstract [en]

Room temperature surface emission is realized on a large area (1.5 mm x 1.5 mm) photonic crystal quantum cascade laser (PhC-QCL) driven under pulsed mode, at the wavelength around 8.75 mu m. By introducing in-plane asymmetry to the pillar shape and optimizing the current injection with a grid-like window contact, the maximum peak power of the PhC-QCL is up to 5 W. The surface emitting beam has a crossing shape with 10 degrees divergence.

Place, publisher, year, edition, pages
OPTICAL SOC AMER, 2019
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-257554 (URN)10.1364/OE.27.022708 (DOI)000478790400079 ()2-s2.0-85070311588 (Scopus ID)
Note

QC 20190925

Available from: 2019-09-25 Created: 2019-09-25 Last updated: 2019-09-25Bibliographically approved
Omanakuttan, G., Martinez Sacristan, O., Marcinkevičius, S., Uzdavinys, T. K., Jimenez, J., Ali, H., . . . Sun, Y.-T. (2019). Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth. Optical Materials Express, 9(3), 1488-1500
Open this publication in new window or tab >>Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth
Show others...
2019 (English)In: Optical Materials Express, ISSN 2159-3930, E-ISSN 2159-3930, Vol. 9, no 3, p. 1488-1500Article in journal (Refereed) Published
Abstract [en]

We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Place, publisher, year, edition, pages
OPTICAL SOC AMER, 2019
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-247834 (URN)10.1364/OME.9.001488 (DOI)000460134500051 ()
Note

QC 20190326

Available from: 2019-03-26 Created: 2019-03-26 Last updated: 2019-05-10Bibliographically approved
Wang, Z., Liang, Y., Meng, B., Sun, Y.-T., Omanakuttan, G., Gini, E., . . . Scalari, G. (2019). Over 2W room temperature lasing on a large area photonic crystal quantum cascade laser. In: 2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO): . Paper presented at Conference on Lasers and Electro-Optics (CLEO), MAY 05-10, 2019, San Jose, CA. IEEE
Open this publication in new window or tab >>Over 2W room temperature lasing on a large area photonic crystal quantum cascade laser
Show others...
2019 (English)In: 2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), IEEE , 2019Conference paper, Published paper (Refereed)
Abstract [en]

We present a large-area (1.5 mm x 1.5 mm) photonic crystal quantum cascade laser, with over 2 W peak power at room temperature (289 K), and symmetrical, narrow (<1 degrees), single-lobed surface-emitting beam.

Place, publisher, year, edition, pages
IEEE, 2019
Series
Conference on Lasers and Electro-Optics, ISSN 2160-9020
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-259478 (URN)10.23919/CLEO.2019.8749311 (DOI)000482226300174 ()2-s2.0-85069174834 (Scopus ID)978-1-943580-57-6 (ISBN)
Conference
Conference on Lasers and Electro-Optics (CLEO), MAY 05-10, 2019, San Jose, CA
Note

QC 20190917

Available from: 2019-09-17 Created: 2019-09-17 Last updated: 2019-09-17Bibliographically approved
Omanakuttan, G., Stergiakis, S., Sahgal, A., Sychugov, I., Lourdudoss, S. & Sun, Y.-T. (2017). Epitaxial lateral overgrowth of GaxIn1-xP toward direct GaxIn1-xP/Si heterojunction. Physica Status Solidi (a) applications and materials science, 214(3)
Open this publication in new window or tab >>Epitaxial lateral overgrowth of GaxIn1-xP toward direct GaxIn1-xP/Si heterojunction
Show others...
2017 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 214, no 3Article in journal (Refereed) Published
Abstract [en]

The growth of GaInP by hydride vapor phase epitaxy (HVPE) was studied on planar GaAs, patterned GaAs for epitaxial lateral overgrowth (ELOG), and InP/Si seed templates for corrugated epitaxial lateral overgrowth (CELOG). First results on the growth of direct GaInP/Si heterojunction by CELOG is presented. The properties of GaxIn(1-x)P layer and their dependence on the process parameters were investigated by X-ray diffraction, including reciprocal lattice mapping (XRD-RLM), scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy (SEM-EDS), photoluminescence (PL), and Raman spectroscopy. The fluctuation of Ga composition in the GaxIn(1-x)P layer was observed on planar substrate, and the strain caused by the composition variation is retained until relaxation occurs. Fully relaxed GaInP layers were obtained by ELOG and CELOG. Raman spectroscopy reveals that there is a certain amount of ordering in all of the layers except those grown at high temperatures. Orientation dependent Ga incorporation in the CELOG, but not in the ELOG GaxIn(1-x)P layer, and Si incorporation in the vicinity of direct GaxIn(1-x)P/Si heterojunction from CELOG are observed in the SEM-EDS analyses. The high optical quality of direct GaInP/Si heterojunction was observed by cross-sectional micro-PL mapping and the defect reduction effect of CELOG was revealed by high PL intensity in GaInP above Si.

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH, 2017
Keywords
III-V semiconductors, epitaxial lateral overgrowth, GaInP, heterojunctions, silicon
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-205518 (URN)10.1002/pssa.201600631 (DOI)000397577000029 ()2-s2.0-85013663617 (Scopus ID)
Note

QC 20170509

Available from: 2017-05-09 Created: 2017-05-09 Last updated: 2019-05-10Bibliographically approved
Lourdudoss, S., Junesand, C., Kataria, H., Metaferia, W., Omanakuttan, G., Sun, Y.-T., . . . Olsson, F. (2017). Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications. In: Eldada, LA Lee, EH He, S (Ed.), SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XIX: . Paper presented at Conference on Smart Photonic and Optoelectronic Integrated Circuits XIX, JAN 31-FEB 02, 2017, San Francisco, CA. , Article ID UNSP 1010705.
Open this publication in new window or tab >>Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications
Show others...
2017 (English)In: SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XIX / [ed] Eldada, LA Lee, EH He, S, 2017, article id UNSP 1010705Conference paper, Published paper (Refereed)
Abstract [en]

We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.

Series
Proceedings of SPIE, ISSN 0277-786X ; 10107
Keywords
Monolithic integration of III-Vs on Si, Photonic integration, Mulitjunction solar cells on silicon, Epitaxial lateral overgrowth, ELOG, Corrugated epitaxial lateral overgrowth, CELOG, III-V on Si, Heterogeneous integration, Silicon photonics
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-211635 (URN)10.1117/12.2255607 (DOI)000405600400002 ()2-s2.0-85019589393 (Scopus ID)978-1-5106-0655-5 (ISBN)978-1-5106-0656-2 (ISBN)
Conference
Conference on Smart Photonic and Optoelectronic Integrated Circuits XIX, JAN 31-FEB 02, 2017, San Francisco, CA
Funder
Swedish Research CouncilSwedish Energy AgencyVINNOVA
Available from: 2017-08-09 Created: 2017-08-09 Last updated: 2017-08-09Bibliographically approved
Omanakuttan, G., Stergiakis, S., Sahgal, A., Sychugov, I., Lourdudoss, S. & Sun, Y.-T. (2016). Epitaxial lateral overgrowth of GaxIn1-xP towards coherent GaxIn1-xP/Si heterojunction by hydride vapor phase epitaxy. In: 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016: . Paper presented at 2016 Compound Semiconductor Week, CSW 2016, 26 June 2016 through 30 June 2016. IEEE
Open this publication in new window or tab >>Epitaxial lateral overgrowth of GaxIn1-xP towards coherent GaxIn1-xP/Si heterojunction by hydride vapor phase epitaxy
Show others...
2016 (English)In: 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, IEEE, 2016Conference paper, Published paper (Refereed)
Abstract [en]

Epitaxial lateral overgrowth (ELOG) of GaInP on GaAs by hydride vapor phase epitaxy (HVPE) is carried out as a pre-study to obtain GaInP/Si heterointerface. We present first results on the growth of GaInP/Si by a modified ELOG technique, corrugated epitaxial lateral overgrowth (CELOG).

Place, publisher, year, edition, pages
IEEE, 2016
Keywords
corrugated epitaxial lateral overgrowth, epitaxial lateral overgrowth, III-V/Si heterojunction solar cells, Heterojunctions, Hydrides, Semiconducting indium, Vapor phase epitaxy, Hetero interfaces, Heterojunction solar cells, Hydride vapor phase epitaxy, Epitaxial growth
National Category
Metallurgy and Metallic Materials
Identifiers
urn:nbn:se:kth:diva-202175 (URN)10.1109/ICIPRM.2016.7528828 (DOI)2-s2.0-84992035477 (Scopus ID)9781509019649 (ISBN)
Conference
2016 Compound Semiconductor Week, CSW 2016, 26 June 2016 through 30 June 2016
Note

QC 20170307

Available from: 2017-03-07 Created: 2017-03-07 Last updated: 2017-06-15Bibliographically approved
Sun, Y., Omanakuttan, G. & Lourdudoss, S. (2015). An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth. Applied Physics Letters, 106(21), Article ID 213504.
Open this publication in new window or tab >>An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth
2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 21, article id 213504Article in journal (Refereed) Published
Abstract [en]

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP: Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm(2) at a reverse voltage of -1V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm(2), an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.

Keywords
Defect density, Defects, Efficiency, Epitaxial growth, Heterojunctions, Interfaces (materials), Lattice mismatch, Open circuit voltage, Photodiodes, Photovoltaic effects, Quantum efficiency, Scanning electron microscopy, Semiconductor quantum wells, Silicon, Solar cells, Current-voltage measurements, Diode characteristics, Epitaxial lateral overgrowth, External quantum efficiency, Heterojunction photodiodes, High-efficiency solar cells, Hydride vapor phase epitaxy, Internal quantum efficiency
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-169968 (URN)10.1063/1.4921992 (DOI)000355631400048 ()2-s2.0-84930941383 (Scopus ID)
Funder
Swedish Energy AgencyVINNOVA
Note

QC 20150625

Available from: 2015-06-25 Created: 2015-06-25 Last updated: 2019-05-10Bibliographically approved
Zheng, Q., Kim, H., Zhang, R., Sardela, M., Zuo, J., Manavaimaran, B., . . . Braun, P. V. (2015). Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy. Journal of Applied Physics, 118(22), Article ID 224303.
Open this publication in new window or tab >>Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy
Show others...
2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 118, no 22, article id 224303Article in journal (Refereed) Published
Abstract [en]

Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1-xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2015
Keywords
X-RAY-DIFFRACTION, LIGHT-EMITTING-DIODES, OPTOELECTRONIC DEVICES, BANDGAP CRYSTALS, SOLAR-CELLS, WAVE-GUIDES, GAINP, HETEROSTRUCTURES, RANGE, GAAS
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-180605 (URN)10.1063/1.4937273 (DOI)000367193100015 ()2-s2.0-84950115310 (Scopus ID)
Note

QC 20160121

Available from: 2016-01-21 Created: 2016-01-19 Last updated: 2017-11-30Bibliographically approved
Sun, Y., Junesand, C., Metaferia, W., Kataria, H., Julian, N., Bowers, J., . . . Lourdudoss, S. (2015). Optical and structural properties of sulfur-doped ELOG InP on Si. Journal of Applied Physics, 117(21), Article ID 215303.
Open this publication in new window or tab >>Optical and structural properties of sulfur-doped ELOG InP on Si
Show others...
2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 21, article id 215303Article in journal (Refereed) Published
Abstract [en]

Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO<inf>2</inf> mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.

Keywords
Luminescence, Structural properties, Sulfur, Transmission electron microscopy, Cross-sectional transmission electron microscopy, Diffraction conditions, Enhanced luminescence, Epitaxial lateral overgrowth, Fault propagation, Luminescence intensity, Room temperature, Situ thermal annealing
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-170308 (URN)10.1063/1.4921868 (DOI)000355925600063 ()2-s2.0-84930394456 (Scopus ID)
Funder
Swedish Research CouncilSwedish Foundation for Strategic Research Knut and Alice Wallenberg Foundation
Note

QC 20150629

Available from: 2015-06-29 Created: 2015-06-29 Last updated: 2017-12-04Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-8545-6546

Search in DiVA

Show all publications