Nowadays, the interest in the design of particles that combine therapy and diagnosis simultaneously to obtain a theranostic material has increased. One of the most used materials for MRI diagnosis is iron oxide, where clusters of superparamagnetic iron oxide (SPIONs) are noteworthy candidates. These particles are of high interest due to their broad range of applications, such as contrast agents, use in magnetic separation processes, and in hyperthermia therapy, among others. One of the major problems with their use is maintaining superparamagnetism while having the highest magnetization-to-particle ratio. In this work, microwave-assisted synthesis of clusters formed by SPIONs has been investigated. This synthesis strategy allows for significant reduction in the time and energy required to obtain SPION clusters. Also, the magnetization-to-particle ratio has been increased in comparison with single SPIONs. Subsequently, the clusters are coated with amorphous silica using the Stöber method, followed by mesoporous (MS) silica using the atrane method, which offers high and conformal coating homogeneity over the clusters. Surfactant extraction was done using a simple mixture of water, ethanol, and sodium chloride – avoiding the use of other organic solvents. Finally, as a proof of concept, the loading and release of a model molecule were studied to confirm that the SPION-NCs@MS presented in this work have great potential as theranostic agents.

Bismuth telluride-Bi2Te3 is the most promising material for harvesting thermal energy near room temperature. There are numerous works on Bi2Te3 reporting significantly different transport properties, with no clear connection to the synthetic routes used and the resultant surface chemistry of the synthesized materials. It is of utmost importance to characterize the constituent particles’ surface and interfaces to get a better understanding of their influence on the transport properties, that will significantly improve the material design starting from the synthesis step. Electrophoretic deposition (EPD) is a promising technique, enabling the formation of thick films using colloidally stabilized suspensions of pre-made nanoparticles, which can enable the study of the effect of surface chemistry, in connection to the synthetic route, on the material's transport properties. In order to explore the differences in surface chemistry and the resultant transport properties in relation to the synthetic scheme used, here we report on Bi2Te3 synthesised through two wet-chemical routes in water (Hydro-) and oil (Thermo-) as the solvents. XRD analysis showed a high phase purity of the synthesized materials. SEM analysis revealed hexagonal platelet morphology of the synthesized materials, which were then used to fabricate EPD films. Characterization of the EPD films reveal significant differences between the Hydro- and Thermo-Bi2Te3 samples, leading to about 8 times better electrical conductivity values in the Thermo-Bi2Te3. XPS analysis revealed a higher metal oxides content in the Hydro-Bi2Te3 sample, contributing to the formation of a resistive layer, thus lowering the electrical conductivity. Arrhenius plots of electrical conductivity vs inverse temperature was used for the estimation of the activation energy for conduction, revealing a higher activation energy need for the Hydro-Bi2Te3 film, in agreement with the resistive barrier oxide content. Both the samples exhibited negative Seebeck coefficient (S) in the order of 160–170 mV/K. The small difference in S of Hydro- and Themo-Bi2Te3 films was explained by the effective medium theory, revealing that the magnitude of S is linearly correlated with the surface oxide content. Based on the findings, TE materials synthesized through thermolysis route is recommended for further studies using soft treatment/processing of pre-made TE materials. EPD platform presented here is shown to clearly expose the differences in the electronic transport in connection to nanoparticle surface chemistry, proving a promising methodology for the evaluation of morphology, size and surface chemistry dependence of electronic transport for a wide range of materials.

With the recent advances in thermoelectric (TE) technology, there is an increasing demand to develop thick films that would enable large-scale TE devices. Assembly of TE-films from size and morphology-controlled nano particles has been a challenging issue that can be addressed by the use of electrophoretic deposition (EPD) technique. In this work, morphology-controlled Sb2Te3 nanoparticles were synthesized through microwave assisted thermolysis, which were subsequently used for EPD of TE films on specially developed glass substrates. The electronic transport properties were measured in the temp-range of 22-45 degrees C. The as-made EPD films showed a high initial resistance, ascribed to high porosity and the presence of surface oxide/passivating layers. The impact of two types of small organic molecules-as hexanedithiol and dodecanethiol, on the electronic transport was investigated, resulting in a significant improvement in the electrical conductivity of the films. The XPS analysis suggests that the thiols bind to the surface of nanoparticles through formation of sulfides. Seebeck coefficient in the range of + 160 to + 190 & mu;V/K was measured, revealing the p-type transport through the deposited films. Finally, a power factor of about 2.5 & mu;W/K2.m was estimated the first time for p-type EPD films, revealing the potential of the developed nanoparticles and substrate, the small molecule additives and the EPD process presented in this work.

Assembly of thermoelectric nanostructures with pre-defined morphology and surface chemistry on solid sub-strates has been one of the challenges for in-plane TE devices. Electrophoretic deposition (EPD) has the potential to be used for this purpose, where the use of non-conductive substrates is required to enable a reliable evaluation of the transport property of electrically active films. Bi2Te3 nanoparticles, which were synthesized using microwave-assisted hydrothermal route, were used for the EPD of thermoelectric films on glass substrates. A special substrate was fabricated using maskless photolithography, to evaluate the electronic transport properties of the TE films without the interference of the substrate. Electrolyte composition was optimized for high mobility of the suspended nanoparticles, and Bi2Te3 EPD films were fabricated with a high deposition rate, reaching 10 mu m/min. Initial EPD films showed high resistivity, ascribed to the surface oxide layer and capping ligands. The resistance was significantly reduced by the addition of a dithiol molecular linker, capable of interconnecting the Bi2Te3 nanoparticles through ligand-exchange. Seebeck coefficient in the range-150 to-180 mu V/K was measured, revealing the transport through the deposited films. Finally, a power factor of 169 nW/K-2.m was estimated, revealing the potential for the application of this technology to large area TE films as active coatings using the developed EPD process.

Thermoelectric (TE) materials can have a strong benefit to harvest thermal energy if they can be applied to large areas without losing their performance over time. One way of achieving large-area films is through hybrid materials, where a blend of TE materials with polymers can be applied as coating. Here, we present the development of all solution-processed TE ink and hybrid films with varying contents of TE Sb₂Te₃ and Bi₂Te₃ nanomaterials, along with their characterization. Using (1-methoxy-2-propyl) acetate (MPA) as the solvent and poly (methyl methacrylate) as the durable polymer, large-area homogeneous hybrid TE films have been fabricated. The conductivity and TE power factor improve with nanoparticle volume fraction, peaking around 60-70% solid material fill factor. For larger fill factors, the conductivity drops, possibly because of an increase in the interface resistance through interface defects and reduced connectivity between the platelets in the medium. The use of dodecanethiol (DDT) as an additive in the ink formulation enabled an improvement in the electrical conductivity through modification of interfaces and the compactness of the resultant films, leading to a 4-5 times increase in the power factor for both p- and n-type hybrid TE films, respectively. The observed trends were captured by combining percolation theory with analytical resistive theory, with the above assumption of increasing interface resistance and connectivity with polymer volume reduction. The results obtained on these hybrid films open a new low-cost route to produce and implement TE coatings on a large scale, which can be ideal for driving flexible, large-area energy scavenging technologies such as personal medical devices and the IoT. 

In this study we have developed a new fabrication technique for Tungsten Silicide (WSi) Superconducting Nanowire Single-Photon Detectors (SNSPD). These detectors arespecifically designed to interact with the photons in the infra-red region of theelectro magnetic spectrum. Fabrication process is described in great detail with the intention of giving the readers a broad view about the facts or aspects of various situations they might face in the clean room processes. Ultimate goal for the project is to integrate these high temperature SNSPD detectors with the photonic circuits.

The Josephson effect, tunnelling of a supercurrent through a thin insulator layer between two superconducting islands, is a phenomena characterized by a spatially distributed phase of the superconducting condensate. In recent years, there has been a growing focus on Josephson junction devices particularly for the applications of quantum metrology and superconducting qubits. In this study, we report the development of Josephson junction circuit formed by serially connecting many Superconducting Quantum Interference Devices, SQUIDs. We present experimental measurements as well as numerical simulations of a phase-slip center, a SQUID with weaker junctions, embedded in a Josephson junction chain. The DC transport properties of the chain are the result of phase slips which we simulate using a classical model that includes linear external damping, terminating impedance, as well as internal nonlinear quasiparticle damping. We find good agreement between the simulated and the experimental current voltage characteristics. The simulations allow us to examine the spatial and temporal distribution of phase-slip events occurring across the chains and also the existence of travelling voltage pulses which reflect at the chain edges.

In this work, a novel CMOS compatible process for Si-based materials has been presented to form SiGe nanowires (NWs) on SiGe On Insulator (SGOI) wafers with unprecedented thermoelectric (TE) power factor (PF). The TE properties of SiGe NWs were characterized in a back-gate configuration and a physical model was applied to explain the experimental data. The carrier transport in NWs was modified by biasing voltage to the gate at different temperatures. The PF of SiGe NWs was enhanced by a factor of >2 in comparison with bulk SiGe over the temperature range of 273 K to 450 K. This enhancement is mainly attributed to the energy filtering of carriers in SiGe NWs, which were introduced by imperfections and defects created during condensation process to form SiGe layer or in NWs during the processing of NWs.

In this study, the electrical properties of SiGe nanowires in terms of process and fabrication integrity, measurement reliability, width scaling, and doping levels were investigated. Nanowires were fabricated on SiGe-on oxide (SGOI) wafers with thickness of 52 nm and Ge content of 47%. The first group of SiGe wires was initially formed by using conventional I-line lithography and then their size was longitudinally reduced by cutting with a focused ion beam (FIB) to any desired nanometer range down to 60 nm. The other nanowires group was manufactured directly to a chosen nanometer level by using sidewall transfer lithography (STL). It has been shown that the FIB fabrication process allows manipulation of the line width and doping level of nanowires using Ga atoms. The resistance of wires thinned by FIB was 10 times lower than STL wires which shows the possible dependency of electrical behavior on fabrication method.