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2024 (English)In: Physica Status Solidi (A): Applications and Materials Science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 221, no 10, article id 2300958Article in journal (Refereed) Published
Abstract [en]
A pn-heterojunction is fabricated by depositing an n-type β-Ga2O3 film by pulsed laser deposition (PLD) on c-cut Al2O3. P-type cuprous oxide films, Cu2O, are then deposited by PLD, as well as by radio frequency (RF) magnetron sputtering. It is concluded that hole injection is prohibited by a 3.26 eV valence band barrier, as measured by X-ray photo-electron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Heterojunction diode structures are prepared on the front side and electrical measurements demonstrate a rectification ration of 8 orders of magnitude and an ideality factor close to 2, indicating interface recombination-controlled forward current. The junction is also optically active and shows a very fast photo-response to 275 nm UV light.
Place, publisher, year, edition, pages
Wiley, 2024
Keywords
electro-optical properties, magnetron sputtering, pulsed laser deposition, semiconducting oxides, transparent conducting oxide, UV photodetector
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-366900 (URN)10.1002/pssa.202300958 (DOI)001194738800001 ()2-s2.0-85189105203 (Scopus ID)
Note
QC 20250711
2025-07-112025-07-112025-07-11Bibliographically approved