A new analytical all-solid-state platform for intradermal potentiometric detection of potassium in interstitial fluid is presented here. Solid microneedles are modified with different coatings and polymeric membranes to prepare both the potassium-selective electrode and reference electrode needed for the potentiometric readout. These microneedle-based electrodes are fixed in an epidermal patch suitable for insertion into the skin. The analytical performances observed for the potentiometric cell (Nernstian slope, limit of detection of 10(-4.9) potassium activity, linear range of 10(-4.2) to 10(-1.1), drift of 0.35 +/- 0.28 mV h(-1)), together with a fast response time, adequate selectivity, and excellent reproducibility and repeatability, are appropriate for potassium analysis in interstitial fluid within both clinical and harmful levels. The potentiometric response is maintained after several insertions into animal skin, confirming the resiliency of the microneedle-based sensor. Ex vivo tests based on the intradermal detection of potassium in chicken and porcine skin demonstrate that the microneedle patch is suitable for monitoring potassium changes inside the skin. In addition, the dimensions of the microneedles modified with the corresponding layers necessary to enhance robustness and provide sensing capabilities (1000 mu m length, 45 degrees tip angle, 15 mu m thickness in the tip, and 435 mu m in the base) agree with the required ranges for a painless insertion into the skin. In vitro cytotoxicity experiments showed that the patch can be used for at least 24 h without any side effect for the skin cells. Overall, the developed concept constitutes important progress in the intradermal analysis of ions related to an electrolyte imbalance in humans, which is relevant for the control of certain types of diseases.

The electrical contact resistance at metal–graphene interfaces can significantly degrade the properties of graphene devices and is currently hindering the full exploitation of graphene’s potential. Therefore, the influence of environmental factors, such as humidity, on the metal–graphene contact resistance is of interest for all graphene devices that operate without hermetic packaging. We experimentally studied the influence of humidity on bottom-contacted chemical-vapor-deposited (CVD) graphene–gold contacts, by extracting the contact resistance from transmission line model (TLM) test structures. Our results indicate that the contact resistance is not significantly affected by changes in relative humidity (RH). This behavior is in contrast to the measured humidity sensitivity  of graphene’s sheet resistance. In addition, we employ density functional theory (DFT) simulations to support our experimental observations. Our DFT simulation results demonstrate that the electronic structure of the graphene sheet on top of silica is much more sensitive to adsorbed water molecules than the charge density at the interface between gold and graphene. Thus, we predict no degradation of device performance by alterations in contact resistance when such contacts are exposed to humidity. This knowledge underlines that bottom-contacting of graphene is a viable approach for a variety of graphene devices and the back end of the line integration on top of conventional integrated circuits.

Intra cranial pressure (ICP) monitoring is used in treating severe traumatic brain injury (TBI) patients. All current clinical available measurement methods are invasive presenting considerable social costs. This paper presents a preliminary investigation of the feasibility of ICP monitoring using an innovative microwave-based non-invasive approach. A phantom mimicking the dielectric characteristics of human tissues of the upper part of the head at low microwave frequencies is employed together to a proof-of-concept prototype based on the proposed approach consisting in a readout system and a sub-dermally implanted passive device, both based in split ring resonator techniques. This study shows the potential of our approach to detect two opposite pressure variation stages inside the skull. The employed phantom model needs to be improved to support finer variations in the pressure and better phantom parts, principally for the skull mimic and the loss tangent of all mimics.

Break junctions provide tip-shaped contact electrodes that are fundamental components of nano and molecular electronics. However, the fabrication of break junctions remains notoriously time-consuming and difficult to parallelize. Here we demonstrate true parallel fabrication of gold break junctions featuring sub-3 nm gaps on the wafer-scale, by relying on a novel self-breaking mechanism based on controlled crack formation in notched bridge structures. We achieve fabrication densities as high as 7 million junctions per cm(2), with fabrication yields of around 7% for obtaining crack-defined break junctions with sub-3 nm gaps of fixed gap width that exhibit electron tunneling. We also form molecular junctions using dithiol-terminated oligo(phenylene ethynylene) (OPE3) to demonstrate the feasibility of our approach for electrical probing of molecules down to liquid helium temperatures. Our technology opens a whole new range of experimental opportunities for nano and molecular electronics applications, by enabling very large-scale fabrication of solid-state break junctions.

Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

The ability to manufacture a nanogap in between two electrodes has proven a powerful catalyst for scientific discoveries in nanoscience and molecular electronics. A wide range of bottom-up and top-down methodologies are now available to fabricate nanogaps that are less than 10 nm wide. However, most available techniques involve time-consuming serial processes that are not compatible with large-scale manufacturing of nanogap devices. The scalable manufacturing of sub-10 nm gaps remains a great technological challenge that currently hinders both experimental nanoscience and the prospects for commercial exploitation of nanogap devices. Here, available nanogap fabrication methodologies are reviewed and a detailed comparison of their merits is provided, with special focus on large-scale and reproducible manufacturing of nanogaps. The most promising approaches that could achieve a breakthrough in research and commercial applications are identified. Emerging scalable nanogap manufacturing methodologies will ultimately enable applications with high scientific and societal impact, including high-speed whole genome sequencing, electromechanical computing, and molecular electronics using nanogap electrodes.

A through-glass via (TGV) provides a vertical electrical connection through a glass substrate. TGVs are used in advanced packaging solutions, such as glass interposers and wafer-level packaging of microelectromechanical systems (MEMS). However, TGVs are challenging to realize because via holes in glass typically do not have a sufficiently high-quality sidewall profile for super-conformal electroplating of metal into the via holes. To overcome this problem, we demonstrate here that the via holes can instead be filled by magnetically assembling metal wires into them. This method was used to produce TGVs with a typical resistance of 64 m Omega, which is comparable with other metal TGV types reported in the literature. In contrast to many TGV designs with a hollow center, the proposed TGVs can be more area efficient by allowing solder bump placement directly on top of the TGVs, which was demonstrated here using solder-paste jetting. The magnetic assembly process can be parallelized using an assembly robot, which was found to provide an opportunity for increased wafer-scale assembly speed. The aforementioned qualities of the magnetically assembled TGVs allow the realization of glass interposers and MEMS packages in different thicknesses without the drawbacks associated with the current TGV fabrication methods.

Novelty / Progress Claims We have developed a new method for fabrication of through-glass vias (TGVs). The method allows rapid filling of via holes with metal rods both in thin and thick glass substrates.

Background Vertical electrical feedthroughs in glass substrates, i.e. TGVs, are often required in wafer-scale packaging of MEMS that utilizes glass lids. The current methods of making TGVs have drawbacks that prevent the full utilization of the excellent properties of glass as a package material, e.g. low RF losses. Magnetic assembly has been used earlier to fabricate through-silicon vias (TSVs), and in this work we extend this method to realize TGVs [1].

Methods The entire TGV fabrication process is maskless, and the processes used include: direct patterning of wafer metallization using femtosecond laser ablation, magnetic-fieldassisted self-assembly of metal wires into via holes, and solder-paste jetting of bump bonds on TGVs.

Results We demonstrate that: (1) the magnetically assembled TGVs have a low resistance, which makes them suitable even for low-loss and high-current applications; (2) the magneticassembly process can be parallelized in order to increase the wafer-scale fabrication speed; (3) the magnetic assembly produces void-free metal filling for TGVs, which allows solder placement directly on top of the TGV for the purpose of high integration density; and (4) good thermal-expansion compatibility between TGV metals and glass substrates is possible with the right choice of materials, and several suitable metals-glass pairs are identified for possible improvement of package reliability [2].

[1] M. Laakso et al., IEEE 30th Int. Conf. on MEMS, 2017. DOI:10.1109/MEMSYS.2017.7863517

[2] M. Laakso et al., “Through-Glass Vias for Glass Interposers and MEMS Packaging Utilizing Magnetic Assembly of Microscale Metal Wires,” manuscript in preparatio

In this paper we report of a novel and very simple fabrication method for realizing amperometric gas sensors using conventional wire bonding technology. Working and counter electrodes are made of 360 vertically standing bond wires, entirely manufactured by a fully automated, standard wire bonding tool. Our process enables standing bond wires with a length of 1.24 mm, resulting in an extremely high aspect-ratio of 50, thus effectively increasing the surface area of the working electrode. All gas sensor electrodes are embedded in a polymer-based, solid electrolyte. Therefore, laborious handling of liquid electrolytes can be avoided. Here, we report of a nitric oxide (NO) gas sensor that is capable of detecting NO gas concentrations down to the single-digit ppm range. The proposed approach demonstrates the feasibility towards a scalable and entire back-end fabrication concept for low-cost NO gas sensors.

Non-dispersive infrared (NDIR) gas spectroscopy is a highly accurate optical gas sensing technology, which has been implemented in various industrial applications. However NDIR systems remain too expensive for many consumer and automotive apphcations. The cost of the infrared (IR) emitter component is a substantial part of the total system cost. In this paper we report of a single filament IR emitter that is fabricated using wire bonding technology. Our fabrication approach offers the prospect of a fully automated assembly by means of utihzing a wire bonding tool to integrate the single filament to the MEMS structured silicon substrate. An apphcation-specific wire bond trajectory enables the mechanical attachment of the filament to form the meander-shaped emitter with a total area of 1 mm². The fabricated IR emitter utilizes a Kanthal (FeCrAl) filament with very high thermal stability and excellent emitting properties under atmospheric conditions. The packaged IR emitter has been characterized using Fourier transform infrared (FTIR) spectroscopy to study the emitted IR spectrum with respect to the requirements of NDIR systems.