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Mohamed, A., Yousef, S., Ali Abdelnaby, M., Osman, T. A., Hamawandi, B., Toprak, M. S., . . . Uheida, A. (2017). Photocatalytic degradation of organic dyes and enhanced mechanical properties of PAN/CNTs composite nanofibers. Separation and Purification Technology, 182, 219-223
Open this publication in new window or tab >>Photocatalytic degradation of organic dyes and enhanced mechanical properties of PAN/CNTs composite nanofibers
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2017 (English)In: Separation and Purification Technology, ISSN 1383-5866, E-ISSN 1873-3794, Vol. 182, p. 219-223Article in journal (Refereed) Published
Abstract [en]

This work describes the enhanced mechanical properties of the composite nanofibers and the photodegradation of two organic dyes using PAN/CNTs under UV irradiation at different volume concentration (0.05, 0.1, 0.2, and 0.3 wt.%). The composite nanofibers was performed with polyacrylonitrile (PAN), and carbon nanotubes (CNTs) by electrospinning process. The composite nanofibers structure and morphology is characterized by XRD, FTIR, SEM, and TEM. The result indicates that with increasing CNTs content, the mechanical properties of the composite nanofibers was enhanced, and became more elastic, and the elastic modulus increased drastically. The results of mechanical properties exhibit improvements in tensile strengths, and elastic modulus by 38% and 84% respectively, at only 0.05 wt.% CNTs. Moreover, photocatalytic degradation performance in short time and low power intensity was achieved comparison to earlier reports.

Place, publisher, year, edition, pages
Elsevier, 2017
Keywords
Composite nanofibers, Mechanical properties, Photodegradation, Carbon, Carbon nanotubes, Elastic moduli, Irradiation, Tensile strength, Yarn, Electrospinning process, Organic dye, Photo catalytic degradation, Polyacrylonitrile (PAN), Structure and morphology, UV irradiation, Volume concentration, Nanofibers
National Category
Materials Engineering
Identifiers
urn:nbn:se:kth:diva-207443 (URN)10.1016/j.seppur.2017.03.051 (DOI)000401393700025 ()2-s2.0-85016937303 (Scopus ID)
Note

QC 20170523

Available from: 2017-05-23 Created: 2017-05-23 Last updated: 2017-06-14Bibliographically approved
Noroozi, M., Hamawandi, B., Toprak, M. . & Radamson, H. . (2014). Fabrication and thermoelectric characterization of GeSn nanowires. In: 2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014: . Paper presented at 2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014; Stockholm; Sweden; 7 April 2014 through 9 April 2014 (pp. 125-128). IEEE Computer Society
Open this publication in new window or tab >>Fabrication and thermoelectric characterization of GeSn nanowires
2014 (English)In: 2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014, IEEE Computer Society, 2014, p. 125-128Conference paper, Published paper (Refereed)
Abstract [en]

In this study, GeSn nanowires (NWs) were fabricated and the thermoelectric performance in terms of power factor and contact resistance have been investigated and compared to Ge and Si. The ohmic contact to the NWs was made by Pt/Ti whereas low contact resistance was obtained by Ni-GeSn (or Ni-Ge) layers. A detailed investigation was performed to process towards low resistance Ni-GeSn phase for GeSn NWs. The phase formation of Ni-GeSn layers was examined by x-ray diffraction (XRD) and the residual strain in GeSn beneath the Ni-GeSn was also measured by high resolution reciprocal lattice mapping (HRRLM). It was demonstrated that Ni reaction with GeSn layer resulted in strain reduction in the remained GeSn material due to Ni outdiffusion to the GeSn NWs demonstrated higher Seebeck coefficient compared to Ge and Si NWs, which suggest promising thermoelectric properties in GeSn.

Place, publisher, year, edition, pages
IEEE Computer Society, 2014
Keywords
contact resistance, GeSn nanowires, Ni-GeSn, themoelectric
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-146689 (URN)10.1109/ULIS.2014.6813914 (DOI)000341731300032 ()2-s2.0-84901336549 (Scopus ID)978-1-4799-3718-9 (ISBN)
Conference
2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014; Stockholm; Sweden; 7 April 2014 through 9 April 2014
Note

QC 20140616

Available from: 2014-06-16 Created: 2014-06-13 Last updated: 2014-10-09Bibliographically approved
Jamshidi, A., Noroozi, M., Moeen, M., Hallén, A., Hamawandi, B., Lu, J., . . . Radamson, H. (2013). Growth of GeSnSiC layers for photonic applications. Surface & Coatings Technology, 230, 106-110
Open this publication in new window or tab >>Growth of GeSnSiC layers for photonic applications
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2013 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 230, p. 106-110Article in journal (Refereed) Published
Abstract [en]

This work presents epitaxial growth of intrinsic and doped GeSnSiC layers using Ge2H6, SnCl4, CH3SiH3, B2H6, PH3 and Si2H6 deposited at 290-380 degrees C on strain relaxed Ge buffer layer or Si substrate by using reduced pressure chemical vapor deposition (RPCVD) technique. The GeSnSi layers were compressively strained on Ge buffer layer and strain relaxed on Si substrate. It was demonstrated that the quality of epitaxial layers is dependent on the growth parameters and that the Sn content in epi-layers could be tailored by growth temperature. The Sn segregation caused surface roughness which was decreased by introducing Si and Si-C into Ge layer. The Sn content in GeSn was carefully determined from the mismatch, both parallel and perpendicular, to the growth direction when the Poisson ratio was calculated for a certain Ge-Sn composition. The X-ray results were excellently consistent with Rutherford Backscattered Spectroscopy (RBS). Strain relaxed GeSn layers were also used as virtual substrate to grow tensile-strained Ge layers. The Ge cap layer had low defect density and smooth surface which makes it a viable candidate material for future photonic applications.

Keywords
GeSnSi, Sn segregation, Strain engineering, RPCVD, Germanium
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-129442 (URN)10.1016/j.surfcoat.2013.06.074 (DOI)000323855700017 ()2-s2.0-84881311813 (Scopus ID)
Funder
Swedish Research CouncilEU, European Research Council
Note

QC 20131002

Available from: 2013-10-02 Created: 2013-09-30 Last updated: 2017-12-06Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-5672-5727

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