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Publications (10 of 19) Show all publications
Velander, E., Kruse, L. (., Wiik, T. (., Wiberg, A., Colmenares, J. & Nee, H.-P. (2018). An IGBT Turn-ON Concept Offering Low Losses Under Motor Drive dv/dt Constraints Based on Diode Current Adaption. IEEE transactions on power electronics, 33(2), 1143-1153
Open this publication in new window or tab >>An IGBT Turn-ON Concept Offering Low Losses Under Motor Drive dv/dt Constraints Based on Diode Current Adaption
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2018 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 33, no 2, p. 1143-1153Article in journal (Refereed) Published
Abstract [en]

In this paper, a new low-loss turn-ON concept for the silicon insulated-gate bipolar transistor (Si-IGBT) in combination with silicon p-i-n diode is presented. The concept is tailored for two-level motor converters in the 100 kW to 1 MW range under the constraint that the output voltages slopes are limited in order to protect the motor windings. Moreover, analyses of the IGBT turn-ON and diode reverse recovery voltage slopes are presented concluding that the diode reverse recovery is the worst case. The concept includes a low-cost measurement of the free-wheeling diode current and temperature by the gate driver without necessity of acquiring this information from the converter control board. By using this concept, the output dv/dt at the diode turn-OFF can be kept approximately constant regardless of the commutated current and junction temperature. Hence, the switching losses could be decreased for the currents and temperatures where the voltage slopes are lower when using a conventional gate driver optimized for the worst case. Moreover, results are shown for one such power semiconductor, showing a total switching loss reduction of up to 28% in comparison with a gate driver without current and temperature measurement. Finally, this concept is particularly suitable for high power semiconductor modules in half-bridge configuration which are recently proposed by several suppliers.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2018
Keywords
motor drives, insulated gate bipolar transistors, power semiconductor devices
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-217925 (URN)10.1109/TPEL.2017.2688474 (DOI)000414414600025 ()2-s2.0-85034081872 (Scopus ID)
Note

QC 20171121

Available from: 2017-11-21 Created: 2017-11-21 Last updated: 2017-11-21Bibliographically approved
Barth, C., Colmenares, J., Foulkes, T., Coulson, K., Sotelo, J., Modeer, T., . . . Pilawa-Podgurski, R. C. N. (2017). Experimental Evaluation of a 1 kW, Single-Phase, 3-Level Gallium Nitride Inverter in hxtreme Cold Environment. In: 2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC): . Paper presented at 32nd IEEE Annual Applied Power Electronics Conference and Exposition (APEC), MAY 26-30, 2017, Tampa, FL (pp. 717-723). IEEE
Open this publication in new window or tab >>Experimental Evaluation of a 1 kW, Single-Phase, 3-Level Gallium Nitride Inverter in hxtreme Cold Environment
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2017 (English)In: 2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), IEEE , 2017, p. 717-723Conference paper, Published paper (Refereed)
Abstract [en]

This work investigates the potential for high power density, high efficiency power conversion at extreme cold temperatures, for hybrid electric aircraft applications. A 1 kW GaN-based 3-level power converter was designed and successfully tested from room temperature down to -140 degrees C, using a custom milled cold-plate. Along with the first demonstration of a flying capacitor multi-level converter and associated components at such low temperature, this work characterized the effect on power conversion losses of various components as a function of temperature. A key finding is that careful attention must be paid to the passive component losses which can increase as the temperature is reduced.

Place, publisher, year, edition, pages
IEEE, 2017
Series
Annual IEEE Applied Power Electronics Conference and Exposition (APEC), ISSN 1048-2334
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-243541 (URN)000403242800105 ()978-1-5090-5366-7 (ISBN)
Conference
32nd IEEE Annual Applied Power Electronics Conference and Exposition (APEC), MAY 26-30, 2017, Tampa, FL
Note

QC 20190208

Available from: 2019-02-08 Created: 2019-02-08 Last updated: 2019-08-20Bibliographically approved
Colmenares, J., Foulkes, T., Barth, C., Modeer, T. & Pilawa-Podgurski, R. C. N. (2016). Experimental Characterization of Enhancement Mode Gallium-Nitride Power Field-Effect Transistors at Cryogenic Temperatures. In: 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA): . Paper presented at 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), NOV 07-09, 2016, Fayetteville, AR (pp. 129-134). IEEE conference proceedings
Open this publication in new window or tab >>Experimental Characterization of Enhancement Mode Gallium-Nitride Power Field-Effect Transistors at Cryogenic Temperatures
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2016 (English)In: 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), IEEE conference proceedings, 2016, p. 129-134Conference paper, Published paper (Refereed)
Abstract [en]

High power density converters in combination with cryogenic power systems could have a significant impact on the electrification of transportation systems as well as other energy conversion systems. In this study, the cryogenic temperature performance of an EPC gallium-nitride (GaN) power field-effect transistor was evaluated. At - 195 degrees C, an 85 % reduction in on-state resistance, and a 16 % increase in threshold voltage were experimentally measured. Moreover, using a double-pulse test, no major changes in switching characteristics were observed. GaN transistors are thus excellent choices for operation at cryogenic temperatures.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2016
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-201293 (URN)10.1109/WiPDA.2016.7799923 (DOI)000392116100024 ()2-s2.0-85010703094 (Scopus ID)978-1-5090-1576-4 (ISBN)
Conference
4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), NOV 07-09, 2016, Fayetteville, AR
Note

QC 20170214

Available from: 2017-02-14 Created: 2017-02-14 Last updated: 2017-02-14Bibliographically approved
Colmenares, J., Kargarrazi, S., Elahipanah, H., Nee, H.-P. & Zetterling, C.-M. (2016). High-Temperature Passive Components for Extreme Environments. In: 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA): . Paper presented at 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), NOV 07-09, 2016, Fayetteville, AR (pp. 271-274). IEEE conference proceedings
Open this publication in new window or tab >>High-Temperature Passive Components for Extreme Environments
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2016 (English)In: 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), IEEE conference proceedings, 2016, p. 271-274Conference paper, Published paper (Refereed)
Abstract [en]

Silicon carbide is an excellent candidate when high temperature power electronics applications are considered. Integrated circuits as well as several power devices have been tested at high temperature. However, little attention has been paid to high temperature passive components that could enable the full SiC potential. In this work, the high-temperature performances of different passive components have been studied. Integrated capacitors in bipolar SiC technology have been tested up to 300 degrees C and, three different designs of inductors have been tested up to 700 degrees C.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2016
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-201295 (URN)10.1109/WiPDA.2016.7799951 (DOI)000392116100052 ()2-s2.0-85010695875 (Scopus ID)978-1-5090-1576-4 (ISBN)
Conference
4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), NOV 07-09, 2016, Fayetteville, AR
Note

QC 20170214

Available from: 2017-02-14 Created: 2017-02-14 Last updated: 2017-02-14Bibliographically approved
Sadik, D.-P., Colmenares, J., Tolstoy, G., Peftitsis, D., Bakowski, M., Rabkowski, J. & Nee, H.-P. (2016). Short-Circuit Protection Circuits for Silicon Carbide Power Transistors. IEEE transactions on industrial electronics (1982. Print), 63(4), 1995-2004, Article ID ITIED.
Open this publication in new window or tab >>Short-Circuit Protection Circuits for Silicon Carbide Power Transistors
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2016 (English)In: IEEE transactions on industrial electronics (1982. Print), ISSN 0278-0046, E-ISSN 1557-9948, ISSN 0278-0046, Vol. 63, no 4, p. 1995-2004, article id ITIEDArticle in journal (Refereed) Published
Abstract [en]

An experimental analysis of the behavior under short-circuit conditions of three different siliconcarbide (SiC) 1200-V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short circuits. A transient thermal device simulation was performed to determine the temperature stress on the die during a short-circuit event, for the SiC MOSFET. It was found that, for reliability reasons, the short-circuit time should be limited to values well below Si IGBT tolerances. Guidelines toward a rugged design for short-circuit protection (SCP) are presented with an emphasis on improving the reliability and availability of the overall system. A SiC device driver with an integrated SCP is presented for each device-type, respectively, where a shortcircuit detection is added to a conventional driver design in a simple way. The SCP driver was experimentally evaluated with a detection time of 180 ns. For all devices, short-circuit times well below 1 µs were achieved.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2016
Keywords
BJT Bipolar junction transistor (BJT), Driver circuits, Failure analysis, Fault detection, Fault protection, JFET Power MOSFET, Semiconductor device reliability, Short-circuit current, Silicon Carbide (SiC), Wide band gap semiconductors, driver circuits, failure analysis, fault detection, fault protection, junction field-effect transistor (JFET), power MOSFET, semiconductor device reliability, short-circuit current, silicon carbide (SiC), wide-bandgap semiconductors
National Category
Engineering and Technology
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-185456 (URN)10.1109/TIE.2015.2506628 (DOI)000372645900001 ()2-s2.0-84963729279 (Scopus ID)
Funder
VINNOVA, 76454
Note

QC 20160419

Available from: 2016-04-19 Created: 2016-04-19 Last updated: 2017-05-29Bibliographically approved
Tolstoy, G., Ranstad, P., Colmenares, J., Giezendanner, F. & Nee, H.-P. (2015). Dual control used in series-loaded resonant converter with SiC devices. In: Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on: . Paper presented at Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on (pp. 495-501). IEEE
Open this publication in new window or tab >>Dual control used in series-loaded resonant converter with SiC devices
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2015 (English)In: Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, IEEE , 2015, p. 495-501Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents the performance of silicon carbide (SiC) switches in a series-loaded resonant (SLR) converter with dual control (DuC). It is shown that the SiC metal oxide-semiconductor field-effect transistor (MOSFET) with DuC increases the overall efficiency of the SLR converter compared to frequency modulation (FM). For the SiC bipolar junction transistors (BJT), the loss reduction with DuC instead of FM is not as dramatic as for the MOSFET case. Regardless of which transistor type used, the switching losses are around 20 % of the total losses at around 25 kHz. With DuC an almost constant switching frequency is used over the full voltage range compared to FM were the switching frequency increases by 13 %. Additionally a reduction of capacitive snubbers is achieved with DuC.

Place, publisher, year, edition, pages
IEEE, 2015
Keywords
MOSFET;bipolar transistors;frequency control;frequency modulation;resonant power convertors;semiconductor switches;silicon compounds;snubbers;wide band gap semiconductors;BJT;DuC;FM;MOSFET;SLR converter;SiC;bipolar junction transistor;capacitive snubber;constant switching frequency;dual control;frequency control;frequency modulation;metal oxide-semiconductor field-effect transistor;series-loaded resonant converter;silicon carbide device;silicon carbide switch;switching loss;Frequency modulation;MOSFET;Silicon carbide;Snubbers;Switching frequency;Switching loss;Voltage control;Capacitive snubbers;Resonant converter control;SiC devices;Soft switching
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
urn:nbn:se:kth:diva-182754 (URN)10.1109/ICPE.2015.7167831 (DOI)000382948300074 ()2-s2.0-84961880181 (Scopus ID)
Conference
Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on
Funder
StandUp
Note

QC 20160317

Available from: 2016-02-23 Created: 2016-02-23 Last updated: 2016-10-24Bibliographically approved
Tolstoy, G., Ranstad, P., Colmenares, J., Giezendanner, F. & Nee, H.-P. (2015). Experimental evaluation of SiC BJTs and SiC MOSFETs in a series-loaded resonant converter. In: Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on: . Paper presented at Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on (pp. 1-9). IEEE
Open this publication in new window or tab >>Experimental evaluation of SiC BJTs and SiC MOSFETs in a series-loaded resonant converter
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2015 (English)In: Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on, IEEE , 2015, p. 1-9Conference paper, Published paper (Refereed)
Abstract [en]

SiC devices such as MOSFETs and BJTs have proven themselves to be contenders to improve the efficiency of resonant converters. The losses of the full-bridge inverter are well below 1% of the rated power at switching frequencies up to 200 kHz, making it possible to reach even higher frequencies. An experimental setup is built and two different full-bridge inverters are tested. One is built with SiC MOSFETs and no additional anti-parallel diodes and one with SiC BJTs and SiC Schottky diodes.

Place, publisher, year, edition, pages
IEEE, 2015
Keywords
Schottky diodes;bridge circuits;elemental semiconductors;invertors;power MOSFET;power bipolar transistors;resonant power convertors;efficiency improvement;full-bridge inverter losses;series-loaded resonant converter;silicon carbide BJT;silicon carbide MOSFET;silicon carbide Schottky diodes;Frequency modulation;Loss measurement;MOSFET;Resonant frequency;Silicon carbide;Snubbers;Zero voltage switching;Converter control;High frequency power converter;Resonant converter;Silicon Carbide (SiC);Soft switching
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
urn:nbn:se:kth:diva-182755 (URN)10.1109/EPE.2015.7309472 (DOI)000377101803093 ()2-s2.0-84965046356 (Scopus ID)
Conference
Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on
Funder
StandUp
Note

QC 20160317

Available from: 2016-02-23 Created: 2016-02-23 Last updated: 2016-07-06Bibliographically approved
Colmenares, J., Peftitsis, D., Rabkowski, J., Sadik, D.-P., Tolstoy, G. & Nee, H.-P. (2015). High-Efficiency 312-kVA Three-Phase Inverter Using Parallel Connection of Silicon Carbide MOSFET Power Modules. IEEE transactions on industry applications, 51(6), 4664-4676
Open this publication in new window or tab >>High-Efficiency 312-kVA Three-Phase Inverter Using Parallel Connection of Silicon Carbide MOSFET Power Modules
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2015 (English)In: IEEE transactions on industry applications, ISSN 0093-9994, E-ISSN 1939-9367, Vol. 51, no 6, p. 4664-4676Article in journal (Refereed) Published
Abstract [en]

This paper presents the design process of a 312-kVA three-phase silicon carbide inverter using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power modules in each phase leg. The design processes of the gate-drive circuits with short-circuit protection and power circuit layout are also presented. Measurements in order to evaluate the performance of the gate-drive circuits have been performed using a double-pulse setup. Moreover, electrical and thermal measurements in order to evaluate the transient performance and steady-state operation of the parallel-connected power modules are shown. Experimental results showing proper steady-state operation of the power converter are also presented. Taking into account measured data, an efficiency of approximately 99.3% at the rated power has been measured for the inverter.

Place, publisher, year, edition, pages
IEEE, 2015
Keywords
Inverter, metal-oxide-semiconductor field-effect transistors (MOSFETs), parallel connection, power module, silicon carbide (SiC)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
urn:nbn:se:kth:diva-180146 (URN)10.1109/TIA.2015.2456422 (DOI)000365415700033 ()2-s2.0-84957922544 (Scopus ID)
Funder
StandUp
Note

QC 20160113

Available from: 2016-01-13 Created: 2016-01-07 Last updated: 2017-11-30Bibliographically approved
Tolstoy, G., Ranstad, P., Colmenares, J., Giezendanner, F., Rabkowski, J. & Nee, H.-P. (2014). An experimental analysis on how the dead-time of SiC BJT and SiC MOSFET impacts the losses in a high-frequency resonant converter. In: 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014: . Paper presented at 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, Lappeenranta, Finland, 26 August 2014 through 28 August 2014 (pp. 6911042). IEEE conference proceedings
Open this publication in new window or tab >>An experimental analysis on how the dead-time of SiC BJT and SiC MOSFET impacts the losses in a high-frequency resonant converter
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2014 (English)In: 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, IEEE conference proceedings, 2014, p. 6911042-Conference paper, Published paper (Refereed)
Abstract [en]

Active control of the dead-time in a SLR converter is in this paper shown to be of great importance. The efficiency of the full-bridge will increase if the dead-time control is made in the right way. Different control algorithms are shown to work well for different power switches. For the SiC MOSFET and the SiC BJT the control algorithms are tested experimentally.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2014
Keywords
Silicon Carbid (SiC)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-166546 (URN)10.1109/EPE.2014.6911042 (DOI)000361460005028 ()2-s2.0-84923870193 (Scopus ID)978-147993015-9 (ISBN)
Conference
2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, Lappeenranta, Finland, 26 August 2014 through 28 August 2014
Note

QC 20150511

Available from: 2015-05-11 Created: 2015-05-11 Last updated: 2015-10-16Bibliographically approved
Sadik, D.-P., Colmenares, J., Peftitsis, D., Tolstoy, G., Rabkowski, J. & Nee, H.-P. (2014). Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection. In: 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014: . Paper presented at 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, Lappeenranta, Finland, 26 August 2014 through 28 August 2014 (pp. 6910789). IEEE
Open this publication in new window or tab >>Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection
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2014 (English)In: 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, IEEE , 2014, p. 6910789-Conference paper, Published paper (Refereed)
Abstract [en]

An experimental analysis of the behavior under short-circuit conditions of three different Silicon Carbide (SiC) 1200 V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short-circuits. A suitable method for short-circuit detection without any comparator is demonstrated. A SiC JFET driver with an integrated short-circuit protection (SCP) is presented where a short-circuit detection is added to a conventional driver design in a simple way. Experimental tests of the SCP driver operating under short-circuit condition and under normal operation are performed successfully.

Place, publisher, year, edition, pages
IEEE, 2014
Keywords
Silicon Carbide (SiC), Fault handling strategy, JFET, MOSFET, BJT, Power semiconductor device, Protection device, Faults, Robustness, Safety, Wide bandgap devices
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering; SRA - Energy
Identifiers
urn:nbn:se:kth:diva-166534 (URN)10.1109/EPE.2014.6910789 (DOI)000361460001041 ()2-s2.0-84923870198 (Scopus ID)978-147993015-9 (ISBN)
Conference
2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, Lappeenranta, Finland, 26 August 2014 through 28 August 2014
Funder
StandUp
Note

QC 20150511

Available from: 2015-05-11 Created: 2015-05-11 Last updated: 2016-02-26Bibliographically approved
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ORCID iD: ORCID iD iconorcid.org/0000-0001-6184-6470

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