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Publications (10 of 11) Show all publications
Sadik, D., Ranstad, P. & Nee, H.-P. (2018). Effect of Parasitic Inductance in a Soft-Switching SiC Power Converter. In: 2018 20TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'18 ECCE EUROPE): . Paper presented at 20th European Conference on Power Electronics and Applications (EPE ECCE Europe), SEP 17-21, 2018, Riga, LATVIA. IEEE
Open this publication in new window or tab >>Effect of Parasitic Inductance in a Soft-Switching SiC Power Converter
2018 (English)In: 2018 20TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'18 ECCE EUROPE), IEEE , 2018Conference paper, Published paper (Refereed)
Abstract [en]

Wide Bandgap power semiconductors such as SiC MOSFETs, have enabled compact and highly efficient power converters operated at higher frequencies. However, parasitic inductance of the package may significantly increase power losses and limit the operation. This paper aims to quantify experimentally these losses in a soft-switching converter. A "removable" stray inductance is implemented in a setup consisting of discrete SiC MOSFET units. Thus, the power loss of the transistors with and without stray inductance can be compared. Similarly slower switching speeds are also implemented to fully emulate a 62-mm module. The power loss induced by the package can thus be evaluated.

Place, publisher, year, edition, pages
IEEE, 2018
Series
European Conference on Power Electronics and Applications, ISSN 2325-0313
National Category
Environmental Engineering Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-240054 (URN)000450299300216 ()978-9-0758-1528-3 (ISBN)
Conference
20th European Conference on Power Electronics and Applications (EPE ECCE Europe), SEP 17-21, 2018, Riga, LATVIA
Note

QC 20181210

Available from: 2018-12-10 Created: 2018-12-10 Last updated: 2018-12-10Bibliographically approved
Sadik, D., Ranstad, P. & Nee, H.-P. (2018). Effect of Parasitic Inductance in a Soft-Switching SiC Power Converter Topics: 1 b: New Materials and Active Devices 7b: High-voltage DC Power Supplies (U). In: 2018 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe: . Paper presented at 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe, 17 September 2018 through 21 September 2018. Institute of Electrical and Electronics Engineers Inc.
Open this publication in new window or tab >>Effect of Parasitic Inductance in a Soft-Switching SiC Power Converter Topics: 1 b: New Materials and Active Devices 7b: High-voltage DC Power Supplies (U)
2018 (English)In: 2018 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe, Institute of Electrical and Electronics Engineers Inc. , 2018Conference paper, Published paper (Refereed)
Abstract [en]

Wide Bandgap power semiconductors such as SiC MOSFETs, have enabled compact and highly efficient power converters operated at higher frequencies. However, parasitic inductance of the package may significantly increase power losses and limit the operation. This paper aims to quantify experimentally these losses in a soft-switching converter. A 'removable' stray inductance is implemented in a setup consisting of discrete SiC MOSFET units. Thus, the power loss of the transistors with and without stray inductance can be compared. Similarly slower switching speeds are also implemented to fully emulate a 62-mm module. The power loss induced by the package can thus be evaluated.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc., 2018
Keywords
Inductance, MOSFET devices, Power converters, Power electronics, Semiconducting silicon compounds, Silicon carbide, Wide band gap semiconductors, High voltage DC power supplies, Higher frequencies, Parasitic inductances, Power semiconductors, Sic power converters, Softswitching converters, Stray inductances, Switching speed, HVDC power transmission
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-247105 (URN)2-s2.0-85057049407 (Scopus ID)9789075815283 (ISBN)
Conference
20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe, 17 September 2018 through 21 September 2018
Note

QC 20190404

Available from: 2019-04-04 Created: 2019-04-04 Last updated: 2019-04-04Bibliographically approved
Sadik, D.-P., Colmenares, J., Tolstoy, G., Peftitsis, D., Bakowski, M., Rabkowski, J. & Nee, H.-P. (2016). Short-Circuit Protection Circuits for Silicon Carbide Power Transistors. IEEE transactions on industrial electronics (1982. Print), 63(4), 1995-2004, Article ID ITIED.
Open this publication in new window or tab >>Short-Circuit Protection Circuits for Silicon Carbide Power Transistors
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2016 (English)In: IEEE transactions on industrial electronics (1982. Print), ISSN 0278-0046, E-ISSN 1557-9948, ISSN 0278-0046, Vol. 63, no 4, p. 1995-2004, article id ITIEDArticle in journal (Refereed) Published
Abstract [en]

An experimental analysis of the behavior under short-circuit conditions of three different siliconcarbide (SiC) 1200-V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short circuits. A transient thermal device simulation was performed to determine the temperature stress on the die during a short-circuit event, for the SiC MOSFET. It was found that, for reliability reasons, the short-circuit time should be limited to values well below Si IGBT tolerances. Guidelines toward a rugged design for short-circuit protection (SCP) are presented with an emphasis on improving the reliability and availability of the overall system. A SiC device driver with an integrated SCP is presented for each device-type, respectively, where a shortcircuit detection is added to a conventional driver design in a simple way. The SCP driver was experimentally evaluated with a detection time of 180 ns. For all devices, short-circuit times well below 1 µs were achieved.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2016
Keywords
BJT Bipolar junction transistor (BJT), Driver circuits, Failure analysis, Fault detection, Fault protection, JFET Power MOSFET, Semiconductor device reliability, Short-circuit current, Silicon Carbide (SiC), Wide band gap semiconductors, driver circuits, failure analysis, fault detection, fault protection, junction field-effect transistor (JFET), power MOSFET, semiconductor device reliability, short-circuit current, silicon carbide (SiC), wide-bandgap semiconductors
National Category
Engineering and Technology
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-185456 (URN)10.1109/TIE.2015.2506628 (DOI)000372645900001 ()2-s2.0-84963729279 (Scopus ID)
Funder
VINNOVA, 76454
Note

QC 20160419

Available from: 2016-04-19 Created: 2016-04-19 Last updated: 2017-05-29Bibliographically approved
Colmenares, J., Peftitsis, D., Rabkowski, J., Sadik, D.-P., Tolstoy, G. & Nee, H.-P. (2015). High-Efficiency 312-kVA Three-Phase Inverter Using Parallel Connection of Silicon Carbide MOSFET Power Modules. IEEE transactions on industry applications, 51(6), 4664-4676
Open this publication in new window or tab >>High-Efficiency 312-kVA Three-Phase Inverter Using Parallel Connection of Silicon Carbide MOSFET Power Modules
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2015 (English)In: IEEE transactions on industry applications, ISSN 0093-9994, E-ISSN 1939-9367, Vol. 51, no 6, p. 4664-4676Article in journal (Refereed) Published
Abstract [en]

This paper presents the design process of a 312-kVA three-phase silicon carbide inverter using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power modules in each phase leg. The design processes of the gate-drive circuits with short-circuit protection and power circuit layout are also presented. Measurements in order to evaluate the performance of the gate-drive circuits have been performed using a double-pulse setup. Moreover, electrical and thermal measurements in order to evaluate the transient performance and steady-state operation of the parallel-connected power modules are shown. Experimental results showing proper steady-state operation of the power converter are also presented. Taking into account measured data, an efficiency of approximately 99.3% at the rated power has been measured for the inverter.

Place, publisher, year, edition, pages
IEEE, 2015
Keywords
Inverter, metal-oxide-semiconductor field-effect transistors (MOSFETs), parallel connection, power module, silicon carbide (SiC)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
urn:nbn:se:kth:diva-180146 (URN)10.1109/TIA.2015.2456422 (DOI)000365415700033 ()2-s2.0-84957922544 (Scopus ID)
Funder
StandUp
Note

QC 20160113

Available from: 2016-01-13 Created: 2016-01-07 Last updated: 2017-11-30Bibliographically approved
Sadik, D.-P., Lim, J.-K., Ranstad, P. & Nee, H.-P. (2015). Investigation of long-term parameter variations of SiC power MOSFETs. In: Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on: . Paper presented at Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on (pp. 1-10). IEEE
Open this publication in new window or tab >>Investigation of long-term parameter variations of SiC power MOSFETs
2015 (English)In: Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on, IEEE , 2015, p. 1-10Conference paper, Published paper (Refereed)
Abstract [en]

Experimental investigations on the gate-oxide and body-diode reliability of commercially available Silicon Carbide (SiC) MOSFETs from the second generation are performed. The body-diode conduction test is performed with a current density of 50 A/cm2 in order to determine if the body-diode of the MOSFETs is free from bipolar degradation. The second test is stressing the gate-oxide. A negative bias is applied on the gate oxide in order to detect and quantify potential drifts.

Place, publisher, year, edition, pages
IEEE, 2015
Keywords
circuit reliability;elemental semiconductors;logic gates;power MOSFET;bipolar degradation;body-diode conduction test;body-diode reliability;gate-oxide reliability;long-term parameter variations;negative bias;potential drift detection;potential drift quantification;silicon carbide power MOSFET;Logic gates;MOSFET;Reliability;Silicon carbide;Stress;Temperature measurement;Threshold voltage;Device characterization;MOSFET;Power semiconductor device;Reliability;Robustness;Silicon Carbide (SiC);Wide bandgap devices
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-182756 (URN)10.1109/EPE.2015.7309314 (DOI)000377101802046 ()2-s2.0-84965026745 (Scopus ID)
Conference
Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on
Funder
StandUp
Note

QC 20160303

Available from: 2016-02-23 Created: 2016-02-23 Last updated: 2017-05-29Bibliographically approved
Sadik, D.-P., Colmenares, J., Peftitsis, D., Tolstoy, G., Rabkowski, J. & Nee, H.-P. (2014). Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection. In: 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014: . Paper presented at 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, Lappeenranta, Finland, 26 August 2014 through 28 August 2014 (pp. 6910789). IEEE
Open this publication in new window or tab >>Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection
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2014 (English)In: 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, IEEE , 2014, p. 6910789-Conference paper, Published paper (Refereed)
Abstract [en]

An experimental analysis of the behavior under short-circuit conditions of three different Silicon Carbide (SiC) 1200 V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short-circuits. A suitable method for short-circuit detection without any comparator is demonstrated. A SiC JFET driver with an integrated short-circuit protection (SCP) is presented where a short-circuit detection is added to a conventional driver design in a simple way. Experimental tests of the SCP driver operating under short-circuit condition and under normal operation are performed successfully.

Place, publisher, year, edition, pages
IEEE, 2014
Keywords
Silicon Carbide (SiC), Fault handling strategy, JFET, MOSFET, BJT, Power semiconductor device, Protection device, Faults, Robustness, Safety, Wide bandgap devices
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering; SRA - Energy
Identifiers
urn:nbn:se:kth:diva-166534 (URN)10.1109/EPE.2014.6910789 (DOI)000361460001041 ()2-s2.0-84923870198 (Scopus ID)978-147993015-9 (ISBN)
Conference
2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, Lappeenranta, Finland, 26 August 2014 through 28 August 2014
Funder
StandUp
Note

QC 20150511

Available from: 2015-05-11 Created: 2015-05-11 Last updated: 2016-02-26Bibliographically approved
Colmenares, J., Peftitsis, D., Rabkowski, J., Sadik, D.-P. & Nee, H.-P. (2014). Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect Transistors. IEEE transactions on power electronics, 29(5), 2367-2379
Open this publication in new window or tab >>Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect Transistors
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2014 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, no 5, p. 2367-2379Article in journal (Refereed) Published
Abstract [en]

Silicon Carbide high-power modules populated with several parallel-connected junction field-effect transistors must be driven properly. Parasitic elements could act as drawbacks in order to achieve fast and oscillation-free switching performance, which are the main goals. These two requirements are related closely to the design of the gate-drive unit, and they must be kept under certain limits when high efficiencies are targeted. This paper deeply investigates several versions of gate-drive units and proposes a dual-function gate-drive unit which is able to switch the module with an acceptable speed without letting the current suffer from significant oscillations. It is experimentally shown that turn-on and turn-off switching times of approximately 130 and 185 ns respectively can be reached, while the magnitude of the current oscillations is kept at an adequate level. Moreover, using the proposed gate driver an efficiency of approximately 99.7% is expected for a three-phase converter rated at 125 kVA and having a switching frequency of 2 kHz.

Place, publisher, year, edition, pages
IEEE, 2014
Keywords
Gate driver, junction field effect transistor, power module, silicone carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
urn:nbn:se:kth:diva-141276 (URN)10.1109/TPEL.2013.2277616 (DOI)000329991500024 ()2-s2.0-84893083630 (Scopus ID)
Funder
StandUp
Note

QC 20140213

Available from: 2014-02-13 Created: 2014-02-13 Last updated: 2017-12-06Bibliographically approved
Lim, J.-K., Peftitsis, D., Sadik, D.-P., Bakowski, M. & Nee, H.-P. (2014). Evaluation of buried grid JBS diodes. In: 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013: . Paper presented at 29 September 2013 through 4 October 2013, Miyazaki (pp. 804-807). Trans Tech Publications Inc.
Open this publication in new window or tab >>Evaluation of buried grid JBS diodes
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2014 (English)In: 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Trans Tech Publications Inc., 2014, p. 804-807Conference paper, Published paper (Refereed)
Abstract [en]

The 4H-SiC Schottky barrier diodes for high temperature operation over 200 °C have been developed using buried grids formed by implantation. Compared to a conventional JBS-type SBD with surface grid (SG), JBS-type SBD with buried grid (BG) has significantly reduced leakage current at reverse bias due to a better field shielding of the Schottky contact. By introducing the BG technology, the 1.7 kV diodes with an anode area 0.0024 cm2 (1 A) and 0.024 cm2 (10 A) were successfully fabricated, encapsulated in TO220 packages, and electrically evaluated. Two types of buried grid arrangement with different grid spacing dimensions were investigated. The measured IV characteristics were compared with simulation. The best fit was obtained with an active area of approximately 60% and 70% of the anode area in large and small devices, respectively. The measured values of the device capacitances were 1000 pF in large devices and 100 pF in small devices at zero bias. The capacitance values are proportional to the device area. The recovery behavior of big devices was measured in a double pulse tester and simulated. The recovery charge, Qc, was 18 nC and 24 nC in simulation and measurement, respectively. The fabricated BG JBS-type SBDs have a smaller maximum reverse recovery current compared to the commercial devices. No influence of the different grid spacing on the recovery charge was observed.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014
Keywords
4H-SiC, Buried grid (BG), Junction barrier schottky (JBS) diode, Schottky barrier diode (SBD), Diodes, High temperature operations, Recovery, Schottky barrier diodes, Commercial Devices, IV characteristics, Junction barrier Schottky diodes, Reverse recovery current, Schottky Barrier Diode(SBD), Simulations and measurements, Silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
urn:nbn:se:kth:diva-167927 (URN)10.4028/www.scientific.net/MSF.778-780.804 (DOI)000336634100190 ()2-s2.0-84896087187 (Scopus ID)9783038350101 (ISBN)
Conference
29 September 2013 through 4 October 2013, Miyazaki
Funder
StandUp
Note

QC 20150608

Available from: 2015-06-08 Created: 2015-05-22 Last updated: 2016-02-26Bibliographically approved
Colmenares, J., Peftitsis, D., Tolstoy, G., Sadik, D.-P., Nee, H.-P. & Rabkowski, J. (2014). High-efficiency three-phase inverter with SiC MOSFET power modules for motor-drive applications. In: : . Paper presented at 2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014 (pp. 468-474). IEEE conference proceedings
Open this publication in new window or tab >>High-efficiency three-phase inverter with SiC MOSFET power modules for motor-drive applications
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2014 (English)Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents the design process of a 312 kVA three-phase silicon carbide inverter using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power modules in each phase-leg. The design processes of the gate-drive circuits with short-circuit protection and the power circuit layout are also presented. Electrical measurements in order to evaluate the performance of the gate-drive circuits have been performed using a double-pulse setup. Experimental results showing the electrical performance during steady-state operation of the power converter are also shown. Taking into account measured data, an efficiency of approximately 99.3% at the rated power has been estimated for the inverter.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2014
Keywords
AC motors, Digital storage, Electric drives, Electric power systems, Electron beam lithography, Field effect transistors, Metals, MOS devices, MOSFET devices, Semiconducting silicon, Silicon carbide, Electrical measurement, Electrical performance, Gate drive circuits, Motor drive applications, Parallel-connected, Short-circuit protection, Steady-state operation, Three-phase inverter, Electric inverters
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
urn:nbn:se:kth:diva-174817 (URN)10.1109/ECCE.2014.6953431 (DOI)2-s2.0-84934312282 (Scopus ID)9781479956982 (ISBN)
Conference
2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014
Funder
StandUp
Note

QC 20151211

Available from: 2015-12-11 Created: 2015-10-07 Last updated: 2016-09-16Bibliographically approved
Sadik, D.-P., Colmenares, J., Peftitsis, D., Lim, J.-K., Rabkowski, J. & Nee, H.-P. (2013). Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs. In: 2013 15th European Conference on Power Electronics and Applications, EPE 2013: . Paper presented at 2013 15th European Conference on Power Electronics and Applications, EPE 2013; Lille, France, 2-6 September 2013.
Open this publication in new window or tab >>Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs
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2013 (English)In: 2013 15th European Conference on Power Electronics and Applications, EPE 2013, 2013Conference paper, Published paper (Refereed)
Abstract [en]

An Experimental performance analysis of a parallel connection of two 1200/80 MΩ silicon carbide SiC MOSFETs is presented. Static parallel connection was found to be unproblematic. The switching performance of several pairs of parallel-connected MOSFETs is shown employing a common simple totem-pole driver. Good transient current sharing and high-speed switching waveforms with small oscillations are presented. To conclude this analysis, a dc/dc boost converter using parallel-connected SiC MOSFETs is designed for stepping up a voltage from 50 V to 560 V. It has been found that at high frequencies, a mismatch in switching losses results in thermal unbalance between the devices.

Series
2013 15th European Conference on Power Electronics and Applications, EPE 2013
Keywords
MOS device, MOSFET, Parallel operation, Silicon Carbide (SiC), Switching losses
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-139155 (URN)10.1109/EPE.2013.6634432 (DOI)2-s2.0-84890162416 (Scopus ID)9781479901166 (ISBN)
Conference
2013 15th European Conference on Power Electronics and Applications, EPE 2013; Lille, France, 2-6 September 2013
Note

QC 20140108

Available from: 2014-01-08 Created: 2014-01-07 Last updated: 2017-05-29Bibliographically approved
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