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Laakso, M. J., Bleiker, S. J., Liljeholm, J., Mårtensson, G. E., Asiatici, M., Fischer, A. C., . . . Niklaus, F. (2018). Through-Glass Vias for Glass Interposers and MEMS Packaging Applications Fabricated Using Magnetic Assembly of Microscale Metal Wires. IEEE Access, 6, 44306-44317
Open this publication in new window or tab >>Through-Glass Vias for Glass Interposers and MEMS Packaging Applications Fabricated Using Magnetic Assembly of Microscale Metal Wires
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2018 (English)In: IEEE Access, E-ISSN 2169-3536, Vol. 6, p. 44306-44317Article in journal (Refereed) Published
Abstract [en]

A through-glass via (TGV) provides a vertical electrical connection through a glass substrate. TGVs are used in advanced packaging solutions, such as glass interposers and wafer-level packaging of microelectromechanical systems (MEMS). However, TGVs are challenging to realize because via holes in glass typically do not have a sufficiently high-quality sidewall profile for super-conformal electroplating of metal into the via holes. To overcome this problem, we demonstrate here that the via holes can instead be filled by magnetically assembling metal wires into them. This method was used to produce TGVs with a typical resistance of 64 m Omega, which is comparable with other metal TGV types reported in the literature. In contrast to many TGV designs with a hollow center, the proposed TGVs can be more area efficient by allowing solder bump placement directly on top of the TGVs, which was demonstrated here using solder-paste jetting. The magnetic assembly process can be parallelized using an assembly robot, which was found to provide an opportunity for increased wafer-scale assembly speed. The aforementioned qualities of the magnetically assembled TGVs allow the realization of glass interposers and MEMS packages in different thicknesses without the drawbacks associated with the current TGV fabrication methods.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018
Keywords
Chip scale packaging, femtosecond laser, glass interposer, laser ablation, multichip modules, robotic assembly, self-assembly, spin-on glass, thermal expansion, through-glass via, through-silicon vias, TSV
National Category
Communication Systems
Identifiers
urn:nbn:se:kth:diva-235465 (URN)10.1109/ACCESS.2018.2861886 (DOI)000444505800001 ()2-s2.0-85050982480 (Scopus ID)
Funder
Knut and Alice Wallenberg FoundationVINNOVA, 324189Swedish Foundation for Strategic Research , GMT14-0071 RIF14-0017
Note

QC 20180928

Available from: 2018-09-28 Created: 2018-09-28 Last updated: 2018-10-02Bibliographically approved
Laakso, M., Bleiker, S. J., Liljeholm, J., Mårtensson, G., Asiatici, M., Fischer, A. C., . . . Niklaus, F. (2018). Through-Glass Vias for MEMS Packaging. In: : . Paper presented at The Micronano System Workshop (MSW), 2018, Helsinki, Finland, 13-15 May.
Open this publication in new window or tab >>Through-Glass Vias for MEMS Packaging
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2018 (English)Conference paper, Oral presentation with published abstract (Other academic)
Abstract [en]

Novelty / Progress Claims We have developed a new method for fabrication of through-glass vias (TGVs). The method allows rapid filling of via holes with metal rods both in thin and thick glass substrates.

Background Vertical electrical feedthroughs in glass substrates, i.e. TGVs, are often required in wafer-scale packaging of MEMS that utilizes glass lids. The current methods of making TGVs have drawbacks that prevent the full utilization of the excellent properties of glass as a package material, e.g. low RF losses. Magnetic assembly has been used earlier to fabricate through-silicon vias (TSVs), and in this work we extend this method to realize TGVs [1].

Methods The entire TGV fabrication process is maskless, and the processes used include: direct patterning of wafer metallization using femtosecond laser ablation, magnetic-fieldassisted self-assembly of metal wires into via holes, and solder-paste jetting of bump bonds on TGVs.

Results We demonstrate that: (1) the magnetically assembled TGVs have a low resistance, which makes them suitable even for low-loss and high-current applications; (2) the magneticassembly process can be parallelized in order to increase the wafer-scale fabrication speed; (3) the magnetic assembly produces void-free metal filling for TGVs, which allows solder placement directly on top of the TGV for the purpose of high integration density; and (4) good thermal-expansion compatibility between TGV metals and glass substrates is possible with the right choice of materials, and several suitable metals-glass pairs are identified for possible improvement of package reliability [2].

[1] M. Laakso et al., IEEE 30th Int. Conf. on MEMS, 2017. DOI:10.1109/MEMSYS.2017.7863517

[2] M. Laakso et al., “Through-Glass Vias for Glass Interposers and MEMS Packaging Utilizing Magnetic Assembly of Microscale Metal Wires,” manuscript in preparatio

National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-238647 (URN)
Conference
The Micronano System Workshop (MSW), 2018, Helsinki, Finland, 13-15 May
Note

QC 20181106

Available from: 2018-11-06 Created: 2018-11-06 Last updated: 2019-05-17Bibliographically approved
Asiatici, M., Fischer, A. C., Rodjegard, H., Haasl, S., Stemme, G. & Niklaus, F. (2016). Capacitive inertial sensing at high temperatures of up to 400 degrees C. Sensors and Actuators A-Physical, 238, 361-368
Open this publication in new window or tab >>Capacitive inertial sensing at high temperatures of up to 400 degrees C
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2016 (English)In: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 238, p. 361-368Article in journal (Refereed) Published
Abstract [en]

High-temperature-resistant inertial sensors are increasingly requested in a variety of fields such as aerospace, automotive and energy. Capacitive detection is especially suitable for sensing at high temperatures due to its low intrinsic temperature dependence. In this paper, we present high-temperature measurements utilizing a capacitive accelerometer, thereby proving the feasibility of capacitive detection at temperatures of up to 400 degrees C. We describe the observed characteristics as the temperature is increased and propose an explanation of the physical mechanisms causing the temperature dependence of the sensor, which mainly involve the temperature dependence of the Young's modulus and of the viscosity and the pressure of the gas inside the sensor cavity. Therefore a static electromechanical model and a dynamic model that takes into account squeeze film damping were developed.

Place, publisher, year, edition, pages
Elsevier, 2016
Keywords
High temperature, Harsh environment, Inertial sensors, Capacitive detection, Accelerometer
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-183657 (URN)10.1016/j.sna.2015.12.025 (DOI)000370306100040 ()2-s2.0-84954190617 (Scopus ID)
Funder
Knut and Alice Wallenberg FoundationEU, European Research Council, 277879
Note

QC 20160319

Available from: 2016-03-19 Created: 2016-03-18 Last updated: 2018-04-11Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-8050-0042

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