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Publications (10 of 47) Show all publications
Inoue, J., Kuroki, S.-I. -., Ishikawa, S., Maeda, T., Sezaki, H., Makino, T., . . . Zetterling, C.-M. (2019). 4H-SIC trench pMOSFETs for high-frequency CMOS inverters. In: Silicon Carbide and Related Materials 2018: . Paper presented at 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, 2-6 September 2018, Birmingham, United Kingdom (pp. 837-840). Trans Tech Publications Ltd
Open this publication in new window or tab >>4H-SIC trench pMOSFETs for high-frequency CMOS inverters
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2019 (English)In: Silicon Carbide and Related Materials 2018, Trans Tech Publications Ltd , 2019, p. 837-840Conference paper, Published paper (Refereed)
Abstract [en]

Low-parasitic-capacitance 4H-SiC pMOSFETs were demonstrated for high-frequency CMOS inverters. In these pMOSFETs, device characteristics including parasitic capacitances (gate-source, gate-drain capacitance) were investigated and low parasitic capacitance was achieved by the trench gate structure.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd, 2019
Series
Materials Science Forum, ISSN 1662-9752 ; 963
Keywords
4H-SiC, Harsh environment electronics, Overlapping capacitance, PMOSFET, Capacitance, CMOS integrated circuits, MOSFET devices, Device characteristics, Gate-drain capacitance, Harsh environment, High frequency HF, Parasitic capacitance, Trench gate structures, Silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-262430 (URN)10.4028/www.scientific.net/MSF.963.837 (DOI)2-s2.0-85071890235 (Scopus ID)9783035713329 (ISBN)
Conference
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, 2-6 September 2018, Birmingham, United Kingdom
Note

QC 20191104

Available from: 2019-11-04 Created: 2019-11-04 Last updated: 2019-11-04Bibliographically approved
Hou, S., Hellström, P.-E., Zetterling, C.-M. & Östling, M. (2019). A 4H-SiC BJT as a Switch for On-Chip Integrated UV Photodiode. IEEE Electron Device Letters, 40(1), 51-54
Open this publication in new window or tab >>A 4H-SiC BJT as a Switch for On-Chip Integrated UV Photodiode
2019 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 40, no 1, p. 51-54Article in journal (Refereed) Published
Abstract [en]

This letter presents the design, fabrication, and characterization of a 4H-SiC n-p-n bipolar junction transistor as a switch controlling an on-chip integrated p-i-n photodiode. The transistor and photodiode share the same epitaxial layers and topside contacts for each terminal. By connecting the collector of the transistor and the anode of the photodiode, the photo current from the photodiode is switched off at low base voltage (cutoff region of the transistor) and switched on at high base voltage (saturation region of the transistor). The transfer voltage of the circuit decreases as the ambient temperature increases (2 mV/degrees C). Both the on-state and off-state current of the circuit have a positive temperature coefficient and the on/off ratio is >80 at temperature ranged from 25 degrees C to 400 degrees C. It is proposed that the on/off ratio can be increased by similar to 1000 times by adding a light blocking layer on the transistor to reduce light induced off-state current in the circuit.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2019
Keywords
4H-SiC, BJT, UV, photodiode, high temperature, switch
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-242990 (URN)10.1109/LED.2018.2883749 (DOI)000456172600013 ()2-s2.0-85057777289 (Scopus ID)
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20190204

Available from: 2019-02-04 Created: 2019-02-04 Last updated: 2019-04-10Bibliographically approved
Hussain, M. W., Elahipanah, H., Schröder, S., Rodriguez, S., Malm, B. G., Östling, M. & Rusu, A. (2019). An Intermediate Frequency Amplifier for High-Temperature Applications (vol 65, pg 1411, 2018). IEEE Transactions on Electron Devices, 66(8), 3694-3694
Open this publication in new window or tab >>An Intermediate Frequency Amplifier for High-Temperature Applications (vol 65, pg 1411, 2018)
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2019 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, no 8, p. 3694-3694Article in journal (Refereed) Published
Abstract [en]

This correspondence highlights an error in the above-titled paper. The corrected material is presented here.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2019
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-256255 (URN)10.1109/TED.2019.2924540 (DOI)000477697400069 ()2-s2.0-85069926790 (Scopus ID)
Note

QC 20191025

Available from: 2019-10-25 Created: 2019-10-25 Last updated: 2019-10-25Bibliographically approved
Östling, M. (2019). Exciting Progress. IEEE Journal of the Electron Devices Society, 7(1), Article ID 8656607.
Open this publication in new window or tab >>Exciting Progress
2019 (English)In: IEEE Journal of the Electron Devices Society, Vol. 7, no 1, article id 8656607Article in journal, Editorial material (Refereed) Published
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc., 2019
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-252117 (URN)10.1109/JEDS.2019.2898562 (DOI)000460753000001 ()2-s2.0-85062697066 (Scopus ID)
Note

QC 20190523

Available from: 2019-05-23 Created: 2019-05-23 Last updated: 2019-10-17Bibliographically approved
Delekta, S. S., Adolfsson, K. H., Benyahia Erdal, N., Hakkarainen, M., Östling, M. & Li, J. (2019). Fully inkjet printed ultrathin microsupercapacitors based on graphene electrodes and a nano-graphene oxide electrolyte. Nanoscale, 11(21), 10172-10177
Open this publication in new window or tab >>Fully inkjet printed ultrathin microsupercapacitors based on graphene electrodes and a nano-graphene oxide electrolyte
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2019 (English)In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 11, no 21, p. 10172-10177Article in journal (Refereed) Published
Abstract [en]

The advance of miniaturized and low-power electronics has a striking impact on the development of energy storage devices with constantly tougher constraints in terms of form factor and performance. Microsupercapacitors (MSCs) are considered a potential solution to this problem, thanks to their compact device structure. Great efforts have been made to maximize their performance with new materials like graphene and to minimize their production cost with scalable fabrication processes. In this regard, we developed a full inkjet printing process for the production of all-graphene microsupercapacitors with electrodes based on electrochemically exfoliated graphene and an ultrathin solid-state electrolyte based on nano-graphene oxide. The devices exploit the high ionic conductivity of nano-graphene oxide coupled with the high electrical conductivity of graphene films, yielding areal capacitances of up to 313 mu F cm-2 at 5 mV s-1 and high power densities of up to 4 mW cm-3 with an overall device thickness of only 1 mu m.

Place, publisher, year, edition, pages
Royal Society of Chemistry, 2019
National Category
Chemical Sciences
Identifiers
urn:nbn:se:kth:diva-254076 (URN)10.1039/c9nr01427f (DOI)000470697800002 ()31107494 (PubMedID)2-s2.0-85066626832 (Scopus ID)
Note

QC 20190624

Available from: 2019-06-24 Created: 2019-06-24 Last updated: 2019-08-16Bibliographically approved
Fan, X., Fredrik, F., Smith, A. D., Schröder, S., Wagner, S., Rödjegård, H., . . . Niklaus, F. (2019). Graphene ribbons with suspended masses as transducers in ultra-small nanoelectromechanical accelerometers. Nature Electronics, 2(9), 394-404
Open this publication in new window or tab >>Graphene ribbons with suspended masses as transducers in ultra-small nanoelectromechanical accelerometers
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2019 (English)In: Nature Electronics, ISSN 2520-1131, Vol. 2, no 9, p. 394-404Article in journal (Refereed) Published
Abstract [eo]

Nanoelectromechanical system (NEMS) sensors and actuators could be of use in the development of next-generation mobile, wearable and implantable devices. However, these NEMS devices require transducers that are ultra-small, sensitive and can be fabricated at low cost. Here, we show that suspended double-layer graphene ribbons with attached silicon proof masses can be used as combined spring–mass and piezoresistive transducers. The transducers, which are created using processes that are compatible with large-scale semiconductor manufacturing technologies, can yield NEMS accelerometers that occupy at least two orders of magnitude smaller die area than conventional state-of-the-art silicon accelerometers. With our devices, we also extract the Young’s modulus values of double-layer graphene and show that the graphene ribbons have significant built-in stresses.

Place, publisher, year, edition, pages
Nature Publishing Group, 2019
National Category
Nano Technology
Identifiers
urn:nbn:se:kth:diva-259517 (URN)10.1038/s41928-019-0287-1 (DOI)000486394600009 ()2-s2.0-85072131685 (Scopus ID)
Note

QC 20191004

Available from: 2019-09-16 Created: 2019-09-16 Last updated: 2019-10-14Bibliographically approved
Jayakumar, G. & Östling, M. (2019). Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology. Nanotechnology, 30(22), Article ID 225502.
Open this publication in new window or tab >>Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology
2019 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 30, no 22, article id 225502Article in journal (Refereed) Published
Abstract [en]

Silicon nanowires (SiNWs) are a widely used technology for sensing applications. Complementary metal-oxide-semiconductor (CMOS) integration of SiNWs advances lab-on-chip (LOC) technology and offers opportunities for read-out circuit integration, selective and multiplexed detection. In this work, we propose novel scalable pixel-based biosensors exploiting the integration of SiNWs with CMOS in fully-depleted silicon-on-insulator technology. A detailed description of the wafer-scale fabrication of SiNW pixels using the CMOS compatible sidewall-transfer-lithography as an alternative to widely investigated time inefficient e-beam lithography is presented. Each 60 nm wide SiNWs sensor is monolithically connected to a control transistor and novel on-chip fluid-gate forming an individual pixel that can be operated in two modes: biasing transistor frontgate (V-G) or substrate backgate (V-BG). We also present the first electrical results of single N and P-type SiNW pixels. In frontgate mode, N and P-type SiNW pixels exhibit subthreshold slope (SS) approximate to 70-80 mV/dec and I-on/I-off approximate to 10(5). The N-type and P-type pixels have an average threshold voltage, Vth of -1.7 V and 0.85 V respectively. In the backgate mode, N and P-type SiNW pixels exhibit SS approximate to 100-150 mV/dec and I-on/I-off approximate to 10(6). The N and P-type pixels have an average V-th of 5 V and -2.5 V respectively. Further, the influence of the backgate and frontgate voltage on the switching characteristics of the SiNW pixels is also studied. In the frontgate mode, the Vth of the SiNW pixels can be tuned at 0.2 V for 1 V change in V-BG for N-type or at -0.2 V for -1 V change in V-BG for P-type pixels. In the backgate mode, it is found that for stable operation of the pixels, the V-G of the N and P-type transistors must be in the range 0.5-2.5 V and 0 V to -2.5 V respectively.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD, 2019
Keywords
silicon nanowire pixel; silicon nanowire biosensor; lab-on-chip; SiNW CMOS integration; selective multiplexed detection; SiNW frontgate mode; SiNW backgate mode
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-248056 (URN)10.1088/1361-6528/ab0469 (DOI)000461650400002 ()30721898 (PubMedID)2-s2.0-85063252229 (Scopus ID)
Note

QC 20190429

Available from: 2019-04-29 Created: 2019-04-29 Last updated: 2019-04-29Bibliographically approved
Hou, S., Shakir, M., Hellström, P.-E., Zetterling, C.-M. & Östling, M. (2019). Process Control and Optimization of 4H-SiC Semiconductor Devices and Circuits. In: Proceedings of the 3rd Electron Devices Technology and Manufacturing, (EDTM) Conference 2019: . Paper presented at The 3rd Electron Devices Technology and Manufacturing (EDTM) Conference. IEEE
Open this publication in new window or tab >>Process Control and Optimization of 4H-SiC Semiconductor Devices and Circuits
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2019 (English)In: Proceedings of the 3rd Electron Devices Technology and Manufacturing, (EDTM) Conference 2019, IEEE, 2019Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
IEEE, 2019
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-248421 (URN)
Conference
The 3rd Electron Devices Technology and Manufacturing (EDTM) Conference
Note

QC 20190411

Available from: 2019-04-08 Created: 2019-04-08 Last updated: 2019-04-11Bibliographically approved
Ishii, T., Kuroki, S.-I. -., Sezaki, H., Ishikawa, S., Maeda, T., Makino, T., . . . Zetterling, C.-M. (2019). Suppression of short-channel effects in 4H-SIC trench MOSFETS. In: Silicon Carbide and Related Materials 2018: . Paper presented at 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, 2-6 September 2018, Birmingham, United Kingdom (pp. 613-616). Trans Tech Publications Ltd
Open this publication in new window or tab >>Suppression of short-channel effects in 4H-SIC trench MOSFETS
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2019 (English)In: Silicon Carbide and Related Materials 2018, Trans Tech Publications Ltd , 2019, p. 613-616Conference paper, Published paper (Refereed)
Abstract [en]

Submicron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC integrated circuits. However, the short channel effects, such as threshold voltage lowering, would be induced at the short-channel devices. In this work, short channel effects were investigated with planar and trench 4H-SiC MOSFETs, and the suppression of the short channel effect with the trench structure was achieved.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd, 2019
Series
Materials Science Forum, ISSN 1662-9752 ; 963
Keywords
Harsh Environment Electronics, Short-Channel Effects, Trench MOSFETs, MOSFET devices, Threshold voltage, 4h-sic mosfets, Harsh environment, High frequency operation, Short-channel devices, Short-channel effect, Submicron, Trench structures, Silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-262431 (URN)10.4028/www.scientific.net/MSF.963.613 (DOI)2-s2.0-85071840627 (Scopus ID)9783035713329 (ISBN)
Conference
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, 2-6 September 2018, Birmingham, United Kingdom
Note

QC 20191104

Available from: 2019-11-04 Created: 2019-11-04 Last updated: 2019-11-04Bibliographically approved
Fan, X., Forsberg, F., Smith, A. D., Schröder, S., Wagner, S., Östling, M., . . . Niklaus, F. (2019). Suspended Graphene Membranes with Attached Silicon Proof Masses as Piezoresistive Nanoelectromechanical Systems Accelerometers. Nano letters (Print), 19(10), 6788-6799
Open this publication in new window or tab >>Suspended Graphene Membranes with Attached Silicon Proof Masses as Piezoresistive Nanoelectromechanical Systems Accelerometers
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2019 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 19, no 10, p. 6788-6799Article in journal (Refereed) Published
Abstract [en]

Graphene is an atomically thin material that features unique electrical and mechanical properties, which makes it an extremely promising material for future nanoelectromechanical systems (NEMS). Recently, basic NEMS accelerometer functionality has been demonstrated by utilizing piezoresistive graphene ribbons with suspended silicon proof masses. However, the proposed graphene ribbons have limitations regarding mechanical robustness, manufacturing yield, and the maximum measurement current that can be applied across the ribbons. Here, we report on suspended graphene membranes that are fully clamped at their circumference and have attached silicon proof masses. We demonstrate their utility as piezoresistive NEMS accelerometers, and they are found to be more robust, have longer life span and higher manufacturing yield, can withstand higher measurement currents, and are able to suspend larger silicon proof masses, as compared to the previous graphene ribbon devices. These findings are an important step toward bringing ultraminiaturized piezoresistive graphene NEMS closer toward deployment in emerging applications such as in wearable electronics, biomedical implants, and internet of things (IoT) devices.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2019
National Category
Nano Technology
Identifiers
urn:nbn:se:kth:diva-259524 (URN)10.1021/acs.nanolett.9b01759 (DOI)000490353500011 ()2-s2.0-85073124932 (Scopus ID)
Note

QC 20191011. QC 20191111

Available from: 2019-09-16 Created: 2019-09-16 Last updated: 2019-11-11Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-5845-3032

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