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Publications (10 of 16) Show all publications
Kargarrazi, S., Elahipanah, H., Saggini, S., Senesky, D. & Zetterling, C.-M. (2019). 500 degrees C SiC PWM Integrated Circuit. IEEE transactions on power electronics, 34(3), 1997-2001
Open this publication in new window or tab >>500 degrees C SiC PWM Integrated Circuit
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2019 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 34, no 3, p. 1997-2001Article in journal (Refereed) Published
Abstract [en]

This letter reports on a high-temperature pulsewidth modulation (PWM) integrated circuit microfabricated in 4H-SiC bipolar process technology that features an on-chip integrated ramp generator. The circuit has been characterized and shown to be operational in a wide temperature range from 25 to 500 degrees C. The operating frequency of the PWM varies in the range of 160 to 210 kHz and the duty cycle varies less than 17% over the entire temperature range. The proposed PWM is suggested to efficiently and reliably control power converters in extreme environments.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2019
Keywords
Bipolar junction transistor (BJT), high-temperature integrated circuit (IC), pulsewidth modulator (PWM), silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-244489 (URN)10.1109/TPEL.2018.2859430 (DOI)000458179200003 ()2-s2.0-85050612857 (Scopus ID)
Note

QC 20190321

Available from: 2019-03-21 Created: 2019-03-21 Last updated: 2019-03-21Bibliographically approved
Hussain, M. W., Elahipanah, H., Zumbro, J. E., Rodriguez, S., Malm, B. G., Mantooth, H. A. & Rusu, A. (2019). A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications. IEEE Journal of the Electron Devices Society, 7(1), 191-195
Open this publication in new window or tab >>A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications
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2019 (English)In: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 7, no 1, p. 191-195Article in journal (Refereed) Published
Abstract [en]

This brief presents a 59.5 MHz negative resistanceoscillator for high-temperature operation. The oscillator employs an in-house 4H-SiC BJT, integrated with the requiredcircuit passives on a low-temperature co-fired ceramic substrate. Measurements show that the oscillator operates from room-temperature up to 400 C. The oscillator delivers an output◦power of 11.2 dBm into a 50 Ω load at 25 C, which decreases to 8.4 dBm at 400 C. The oscillation frequency varies by 3.3% in the entire temperature range. The oscillator is biased witha collector current of 35 mA from a 12 V supply and has amaximum DC power consumption of 431 mW.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2019
Keywords
4H-SiC BJT, high-temperature, LTCC, negative resistance, oscillator
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-245068 (URN)10.1109/JEDS.2018.2889638 (DOI)000460753000029 ()2-s2.0-85059455428 (Scopus ID)
Note

QC 20190311

Available from: 2019-03-05 Created: 2019-03-05 Last updated: 2019-10-17Bibliographically approved
Hussain, M. W., Elahipanah, H., Schröder, S., Rodriguez, S., Malm, B. G., Östling, M. & Rusu, A. (2019). An Intermediate Frequency Amplifier for High-Temperature Applications (vol 65, pg 1411, 2018). IEEE Transactions on Electron Devices, 66(8), 3694-3694
Open this publication in new window or tab >>An Intermediate Frequency Amplifier for High-Temperature Applications (vol 65, pg 1411, 2018)
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2019 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, no 8, p. 3694-3694Article in journal (Refereed) Published
Abstract [en]

This correspondence highlights an error in the above-titled paper. The corrected material is presented here.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2019
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-256255 (URN)10.1109/TED.2019.2924540 (DOI)000477697400069 ()2-s2.0-85069926790 (Scopus ID)
Note

QC 20191025

Available from: 2019-10-25 Created: 2019-10-25 Last updated: 2019-10-25Bibliographically approved
Hussain, M. W., Elahipanah, H., Rodriguez, S., Malm, B. G. & Rusu, A. (2019). Silicon carbide BJT oscillator design using S-parameters. In: Silicon Carbide and Related Materials 2018: . Paper presented at 12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018. (pp. 674-678). Trans Tech Publications Ltd
Open this publication in new window or tab >>Silicon carbide BJT oscillator design using S-parameters
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2019 (English)In: Silicon Carbide and Related Materials 2018, Trans Tech Publications Ltd , 2019, p. 674-678Conference paper, Published paper (Refereed)
Abstract [en]

Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation is further aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, an alternative small-signal, S-parameter based design method can be employed directly without going into complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 °C) was accessed by on-wafer probing and connected by RF-cables to the rest of circuit passives, which were kept at room temperature (RT).

Place, publisher, year, edition, pages
Trans Tech Publications Ltd, 2019
Series
Materials Science Forum, ISSN 1662-9752 ; 963
Keywords
4H-SiC BJT, RF oscillator, S-parameters, Bipolar transistors, Design, Extraction, Parameter extraction, Silicon carbide, Silicon wafers, Elevated temperature, High frequency simulation, High temperature, Oscillator design, Radio frequencies, SiC BJT, Wide temperature ranges, Scattering parameters
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-262429 (URN)10.4028/www.scientific.net/MSF.963.674 (DOI)2-s2.0-85071839366 (Scopus ID)9783035713329 (ISBN)978-3-0357-3332-7 (ISBN)
Conference
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018.
Note

QC 20191104

Available from: 2019-11-04 Created: 2019-11-04 Last updated: 2019-11-04Bibliographically approved
Salemi, A., Elahipanah, H., Jacobs, K., Zetterling, C.-M. & Östling, M. (2018). 15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain. IEEE Electron Device Letters, 39(1), 63-66
Open this publication in new window or tab >>15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain
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2018 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, no 1, p. 63-66Article in journal (Refereed) Published
Abstract [en]

Implantation-free mesa-etched ultra-high-voltage (0.08 mm(2)) 4H-SiC bipolar junction transistors (BJTs) with record current gain of 139 are fabricated, measured, and analyzed by device simulation. High current gain is achieved by optimized surface passivation and optimal cell geometries. The area-optimized junction termination extension is utilized to obtain a high and stable breakdown voltage without ion implantation. The open-base blocking voltage of 15.8 kV at a leakage current density of 0.1 mA/cm(2) is achieved. Different cell geometries (single finger, square, and hexagon cell geometries) are also compared.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018
Keywords
Ultra-high-voltage 4H-SiC BJT, implantation-free, area-optimized junction termination extension (O-JTE), current gain, on-resistance, optimal cell geometries, surface passivation
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-220997 (URN)10.1109/LED.2017.2774139 (DOI)000418874200016 ()2-s2.0-85036592983 (Scopus ID)
Funder
StandUpSwedish Energy Agency
Note

QC 20180111

Available from: 2018-01-11 Created: 2018-01-11 Last updated: 2018-01-11Bibliographically approved
Kargarrazi, S., Elahipanah, H., Rodriguez, S. & Zetterling, C.-M. (2018). 500 °c, High Current Linear Voltage Regulator in 4H-SiC BJT Technology. IEEE Electron Device Letters, 39(4), 548-551
Open this publication in new window or tab >>500 °c, High Current Linear Voltage Regulator in 4H-SiC BJT Technology
2018 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, no 4, p. 548-551Article in journal (Refereed) Published
Abstract [en]

This letter reports on a fully integrated 2-linear voltage regulator operational in a wide temperature range from 25 °C up to 500 °C fabricated in 4H-SiC technology. The circuit provides a stable output voltage with less than 1% variation in the entire temperature range. This letter demonstrates the first power supply solution providing both high-temperature (up to 500 °C) and high-load driving capabilities (up to 2).

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018
Keywords
Bipolar junction transistor (BJT), high-temperature IC, linear voltage regulator (LVR), silicon carbide (SiC)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-227638 (URN)10.1109/LED.2018.2805229 (DOI)000428689000022 ()2-s2.0-85041829681 (Scopus ID)
Funder
Swedish Foundation for Strategic Research Knut and Alice Wallenberg Foundation
Note

QC 20180514

Available from: 2018-05-14 Created: 2018-05-14 Last updated: 2018-05-14Bibliographically approved
Hussain, M. W., Elahipanah, H., Zumbro, J. E., Schröder, S., Rodriguez, S., Malm, B. G., . . . Rusu, A. (2018). A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology. IEEE Electron Device Letters, 39(6), 855-858
Open this publication in new window or tab >>A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology
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2018 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, no 6, p. 855-858Article in journal (Refereed) Accepted
Abstract [en]

This letter presents an active down-conversion mixer for high-temperature communication receivers. The mixer is based on an in-house developed 4H-SiC BJT and down-converts a narrow-band RF input signal centered around 59 MHz to an intermediate frequency of 500 kHz. Measurements show that the mixer operates from room temperature up to 500 °C. The conversion gain is 15 dB at 25 °C, which decreases to 4.7 dB at 500 °C. The input 1-dB compression point is 1 dBm at 25 °C and −2.5 dBm at 500 °C. The mixer is biased with a collector current of 10 mA from a 20 V supply and has a maximum DC power consumption of 204 mW. High-temperature reliability evaluation of the mixer shows a conversion gain degradation of 1.4 dB after 3-hours of continuous operation at 500 °C.

Place, publisher, year, edition, pages
IEEE Press, 2018
Keywords
4H-SiC BJTs, high-temperature, RF, mixer
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-228486 (URN)10.1109/LED.2018.2829628 (DOI)000437086800018 ()2-s2.0-85045754083 (Scopus ID)
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20180601

Available from: 2018-05-25 Created: 2018-05-25 Last updated: 2019-04-24Bibliographically approved
Hussain, M. W., Elahipanah, H., Schröder, S., Rodriguez, S., Malm, B. G., Östling, M. & Rusu, A. (2018). An Intermediate Frequency Amplifier for High-Temperature Applications. IEEE Transactions on Electron Devices, 65(4), 1411-1418
Open this publication in new window or tab >>An Intermediate Frequency Amplifier for High-Temperature Applications
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2018 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 65, no 4, p. 1411-1418Article in journal (Refereed) Accepted
Abstract [en]

This paper presents a two-stage small signal intermediate frequency amplifier for high-temperature communication systems. The proposed amplifier is implemented using in-house silicon carbide bipolar technology. Measurements show that the proposed amplifier can operate from room temperature up to 251 °C. At a center frequency of 54.6 MHz, the amplifier has a gain of 22 dB at room temperature, which decreases gradually to 16 dB at 251 °C. Throughout the measured temperature range, it achieves an input and output return loss of less than-7 and-11 dB, respectively. The amplifier has a 1-dB output compression point of about 1.4 dBm, which remains fairly constant with temperature. Each amplifier stage is biased with a collector current of 10 mA and a base-collector voltage of 3 V. Under the aforementioned biasing, the maximum power dissipation of the amplifier is 221 mW.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018
Keywords
4H-silicon carbide (4H-SiC) bipolar junction transistors (BJTs), high temperature, intermediate frequency (IF) amplifiers, matching networks
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-227642 (URN)10.1109/TED.2018.2804392 (DOI)000427856300022 ()2-s2.0-85042860667 (Scopus ID)
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20180509

Available from: 2018-05-09 Created: 2018-05-09 Last updated: 2019-04-24Bibliographically approved
Salemi, A., Elahipanah, H., Zetterling, C.-M. & Östling, M. (2018). Conductivity modulated and implantation-free 4H-SiC ultra-high-voltage PiN Diodes. In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017: . Paper presented at 17 September 2017 through 22 September 2017 (pp. 568-572). Trans Tech Publications Inc.
Open this publication in new window or tab >>Conductivity modulated and implantation-free 4H-SiC ultra-high-voltage PiN Diodes
2018 (English)In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Trans Tech Publications Inc., 2018, p. 568-572Conference paper, Published paper (Refereed)
Abstract [en]

Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2 are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2018
Keywords
4H-SiC PiN diode, Conductivity modulation, Differential on-resistance, Forward voltage drop, Implantation-free, Ultra-high-voltage, Diodes, Heterojunction bipolar transistors, Leakage currents, Modulation, Nitrogen compounds, Semiconductor junctions, Silicon carbide, Forward voltage drops, On-resistance, SiC PiN diodes, Ultra high voltage, Power semiconductor diodes
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-236358 (URN)10.4028/www.scientific.net/MSF.924.568 (DOI)2-s2.0-85049010479 (Scopus ID)9783035711455 (ISBN)
Conference
17 September 2017 through 22 September 2017
Note

QC 20181106

Available from: 2018-11-06 Created: 2018-11-06 Last updated: 2018-11-06Bibliographically approved
Ekström, M., Hou, S., Elahipanah, H., Salemi, A., Östling, M. & Zetterling, C.-M. (2018). Low temperature Ni-Al ohmic contacts to p-TYPE 4H-SiC using semi-salicide processing. In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017: . Paper presented at International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, United States, 17 September 2017 through 22 September 2017 (pp. 389-392). Trans Tech Publications, 924
Open this publication in new window or tab >>Low temperature Ni-Al ohmic contacts to p-TYPE 4H-SiC using semi-salicide processing
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2018 (English)In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Trans Tech Publications, 2018, Vol. 924, p. 389-392Conference paper, Published paper (Refereed)
Abstract [en]

Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.

Place, publisher, year, edition, pages
Trans Tech Publications, 2018
Series
Materials Science Forum, ISSN 0255-5476 ; 924
Keywords
Ni-Al, P-type ohmic contact, Rapid thermal processing (RTP), Silicon carbide (4H-SiC), Transfer length method (TLM)
National Category
Other Engineering and Technologies
Identifiers
urn:nbn:se:kth:diva-238393 (URN)10.4028/www.scientific.net/MSF.924.389 (DOI)2-s2.0-85049019579 (Scopus ID)9783035711455 (ISBN)
Conference
International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, United States, 17 September 2017 through 22 September 2017
Note

QC 20181108

Available from: 2018-11-08 Created: 2018-11-08 Last updated: 2019-04-29Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-7845-3988

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