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Anand, Srinivasan
Publications (9 of 9) Show all publications
Visser, D., Basuvalingam, S. B., Desieres, Y. & Anand, S. (2019). Optical properties and fabrication of dielectric metasurfaces based on amorphous silicon nanodisk arrays. Optics Express, 27(4), 5353-5367
Open this publication in new window or tab >>Optical properties and fabrication of dielectric metasurfaces based on amorphous silicon nanodisk arrays
2019 (English)In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 27, no 4, p. 5353-5367Article in journal (Refereed) Published
Abstract [en]

Dielectric metasurfaces based on amorphous silicon (a-Si) nanodisks are interesting for nanophotonic applications due to the high refractive index and mature/low temperature fabrication of a-Si. The investigated metasurfaces consist of a-Si nanodisk arrays embedded in a transparent film. The diameter-dependent optical properties of the nanodisk Mie resonators have been investigated by finite-difference time-domain (FDTD) simulations and spectrally-resolved reflectivity and transmission measurements. Well-ordered substrate-free a-Si nanodisk arrays were fabricated and characterized with regard to their broadband anti-reflection properties when placed on a crystalline silicon (c-Si) surface, and reflectivity/ transmission properties when embedded in a polydimethylsiloxane (PDMS) film. Our results confirm broadband anti-reflection when placed on silicon, while the optical characteristics of the nanodisks embedded in PDMS are shown to be potentially useful for color/NIR filter applications as well as for coloring on the micro/nanoscale. under the terms of the OSA Open Access Publishing Agreement

Place, publisher, year, edition, pages
Optical Society of America, 2019
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-245918 (URN)10.1364/OE.27.005353 (DOI)000459152800142 ()2-s2.0-85061966847 (Scopus ID)
Note

QC 20190318

Available from: 2019-03-18 Created: 2019-03-18 Last updated: 2019-03-18Bibliographically approved
Maknys, K., Douhéret, O. & Anand, S. (2018). Electrical characterization of InGaAs/InP quantum wells by scanning capacitance microscopy. In: Microscopy of Semiconducting Materials 2003: (pp. 645-648). CRC Press
Open this publication in new window or tab >>Electrical characterization of InGaAs/InP quantum wells by scanning capacitance microscopy
2018 (English)In: Microscopy of Semiconducting Materials 2003, CRC Press, 2018, p. 645-648Chapter in book (Refereed)
Abstract [en]

In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate 5, 10, and 20 nm InGaAs/InP (lattice matched) quantum wells grown by metalorganic vapour phase epitaxy and sandwiched between Si-doped InP barriers. It is demonstrated that SCM is capable of detecting the electrons accumulated in the quantum wells and that the SCM signal shows a systematic trend for the wells of different width. It is also shown that at appropriate tip-sample DC biases depletion regions in the barriers adjacent to the wells are clearly resolved.

Place, publisher, year, edition, pages
CRC Press, 2018
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-238336 (URN)10.1201/9781351074636 (DOI)2-s2.0-85053350389 (Scopus ID)9781351083089 (ISBN)0750309792 (ISBN)9781315895536 (ISBN)
Note

QC 20181115

Available from: 2018-11-15 Created: 2018-11-15 Last updated: 2018-11-15Bibliographically approved
De Luca, E., Visser, D., Anand, S. & Swillo, M. (2018). Gallium indium phosphide nanostructures with suppressed photoluminescence for applications in nonlinear optics. In: Optics InfoBase Conference Papers: . Paper presented at Frontiers in Optics, FIO 2018, 16 September 2018 through 20 September 2018. OSA - The Optical Society
Open this publication in new window or tab >>Gallium indium phosphide nanostructures with suppressed photoluminescence for applications in nonlinear optics
2018 (English)In: Optics InfoBase Conference Papers, OSA - The Optical Society , 2018Conference paper, Published paper (Refereed)
Abstract [en]

Nanostructured GaInP shows remarkable second-order nonlinear properties. By measuring the second harmonic generation before and after stimulating intrinsic photobleaching, we observed suppressed photoluminescence and unchanged nonlinear properties, making it suitable for low-noise applications. 

Place, publisher, year, edition, pages
OSA - The Optical Society, 2018
Keywords
Gallium alloys, III-V semiconductors, Indium alloys, Nonlinear optics, Photobleaching, Photoluminescence, Semiconducting indium phosphide, Semiconductor alloys, Gallium indium phosphide, Low-noise applications, Nano-structured, Nonlinear properties, Second orders, Indium phosphide
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-247436 (URN)10.1364/FIO.2018.JTu3A.83 (DOI)2-s2.0-85059406720 (Scopus ID)9781943580460 (ISBN)
Conference
Frontiers in Optics, FIO 2018, 16 September 2018 through 20 September 2018
Note

QC 20190403

Available from: 2019-04-03 Created: 2019-04-03 Last updated: 2019-05-20Bibliographically approved
Chen, S., Huang, Y., Visser, D., Anand, S., Buyanova, I. A. & Chen, W. M. (2018). Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects. Nature Communications, 9, Article ID 3575.
Open this publication in new window or tab >>Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects
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2018 (English)In: Nature Communications, ISSN 2041-1723, E-ISSN 2041-1723, Vol. 9, article id 3575Article in journal (Refereed) Published
Abstract [en]

Owing to their superior optical properties, semiconductor nanopillars/nanowires in one-dimensional (1D) geometry are building blocks for nano-photonics. They also hold potential for efficient polarized spin-light conversion in future spin nano-photonics. Unfortunately, spin generation in 1D systems so far remains inefficient at room temperature. Here we propose an approach that can significantly enhance the radiative efficiency of the electrons with the desired spin while suppressing that with the unwanted spin, which simultaneously ensures strong spin and light polarization. We demonstrate high optical polarization of 20%, inferring high electron spin polarization up to 60% at room temperature in a 1D system based on a GaNAs nanodisk-in-GaAs nanopillar structure, facilitated by spin-dependent recombination via merely 2-3 defects in each nanodisk. Our approach points to a promising direction for realization of an interface for efficient spin-photon quantum information transfer at room temperature-a key element for future spin-photonic applications.

Place, publisher, year, edition, pages
Nature Publishing Group, 2018
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-235108 (URN)10.1038/s41467-018-06035-1 (DOI)000443466700015 ()30177701 (PubMedID)2-s2.0-85052744081 (Scopus ID)
Funder
Swedish Research Council, 2016-05091 349-2007-8664Swedish Energy Agency, P40119-1
Note

QC 20180919

Available from: 2018-09-19 Created: 2018-09-19 Last updated: 2018-09-19Bibliographically approved
Desieres, Y., Chen, D. Y., Visser, D., Schippers, C. & Anand, S. (2018). Strong light extraction enhancement using TiO2 nanoparticles-based microcone arrays embossed on III-Nitride light emitting diodes. Applied Physics Letters, 112(23), Article ID 231101.
Open this publication in new window or tab >>Strong light extraction enhancement using TiO2 nanoparticles-based microcone arrays embossed on III-Nitride light emitting diodes
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2018 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, no 23, article id 231101Article in journal (Refereed) Published
Abstract [en]

Colloidal TiO2 nanoparticles were used for embossing of composite microcone arrays on III-Nitride vertical-thin-film blue light emitting diodes (LEDs) as well as on silicon, glass, gallium arsenide, and gallium nitride surfaces. Ray tracing simulations were performed to optimize the design of microcones for light extraction and to explain the experimental results. An optical power enhancement of similar to 2.08 was measured on III-Nitride blue LEDs embossed with a hexagonal array of TiO2 microcones of similar to 1.35 mu m in height and similar to 2.6 mu m in base width, without epoxy encapsulation. A voltage increase in similar to 70mV at an operating current density of similar to 35 A/cm(2) was measured for the embossed LEDs. The TiO2 microcone arrays were embossed on functioning LEDs, using low pressures (similar to 100 g/cm(2)) and temperatures <= 100 degrees C. 

Place, publisher, year, edition, pages
AMER INST PHYSICS, 2018
National Category
Other Physics Topics
Identifiers
urn:nbn:se:kth:diva-231714 (URN)10.1063/1.5021301 (DOI)000434840600001 ()2-s2.0-85048155669 (Scopus ID)
Note

QC 20180817

Available from: 2018-08-17 Created: 2018-08-17 Last updated: 2018-10-16Bibliographically approved
De Luca, E., Sanatinia, R., Mensi, M., Anand, S. & Swillo, M. (2017). Modal phase matching in nanostructured zincblende semiconductors for second-harmonic generation. In: Optics InfoBase Conference Papers: . Paper presented at CLEO: Applications and Technology, CLEO_AT 2017, 14 May 2017 through 19 May 2017. OSA - The Optical Society
Open this publication in new window or tab >>Modal phase matching in nanostructured zincblende semiconductors for second-harmonic generation
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2017 (English)In: Optics InfoBase Conference Papers, OSA - The Optical Society , 2017Conference paper, Published paper (Refereed)
Abstract [en]

Gallium phosphide nanowaveguide arrays, designed to fulfill the phase matching conditions and field-overlap, are characterized by second-harmonic generation. The bandwidth of 30nm with maximum conversion efficiency of 10-3 is measured for 150fs optical pulses.

Place, publisher, year, edition, pages
OSA - The Optical Society, 2017
Keywords
Gallium phosphide, Harmonic generation, Nonlinear optics, Zinc sulfide, Modal phase matching, Nano-structured, Phase matching conditions, Zincblende semiconductors, Phase matching
National Category
Nano Technology
Identifiers
urn:nbn:se:kth:diva-216568 (URN)10.1364/CLEO_AT.2017.JTu5A.60 (DOI)000427296201312 ()2-s2.0-85020426863 (Scopus ID)9781943580279 (ISBN)
Conference
CLEO: Applications and Technology, CLEO_AT 2017, 14 May 2017 through 19 May 2017
Note

QC 20171108

Available from: 2017-11-08 Created: 2017-11-08 Last updated: 2018-05-30Bibliographically approved
Anand, S., Desieres, Y., Visser, D. & Chen, D.-Y. (2017). Optical Coatings and Films Based on Photonic Semiconductor Nanostructure Assemblies. In: 2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON): . Paper presented at 19th International Conference on Transparent Optical Networks (ICTON), JUL 02-06, 2017, Girona, SPAIN. IEEE
Open this publication in new window or tab >>Optical Coatings and Films Based on Photonic Semiconductor Nanostructure Assemblies
2017 (English)In: 2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON), IEEE , 2017Conference paper, Published paper (Refereed)
Abstract [en]

Photonic semiconductor nanostructure assemblies offer unique possibilities for light manipulation as well as for tailoring light-matter interaction by appropriate choice of their geometrical and material properties. The material-structure combination offers a variety of options for wavelength specific applications, deriving from the electronic properties of semiconductors and optical properties of individual and assemblies of nanostructures (particles, disks, pillars/wires etc.). We present an overview of our research on optical coatings based on semiconductor nanostructure assemblies focusing on their optical properties, different fabrication technologies and selected application examples. Design and simulations of the optical coatings are performed by finite difference time domain calculations, and are used as a guideline for fabrication. We discuss different routes for fabrication of nanostructured optical films/coatings including directed assembly and patterning of nanoparticles from solution phase, solution synthesis, combination of dry etching and colloidal lithography, transfer printing, and generation of flexible polymer films with embedded nanostructures. The fabricated films are validated by optical measurements and some device specific properties such as omni-directional broad-band anti-reflection in solar cells and efficient light extraction in light emitting diodes are demonstrated.

Place, publisher, year, edition, pages
IEEE, 2017
Series
International Conference on Transparent Optical Networks-ICTON, ISSN 2162-7339
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-225243 (URN)000427031500084 ()978-1-5386-0859-3 (ISBN)
Conference
19th International Conference on Transparent Optical Networks (ICTON), JUL 02-06, 2017, Girona, SPAIN
Note

QC 20180403

Available from: 2018-04-03 Created: 2018-04-03 Last updated: 2018-04-03Bibliographically approved
Dev Choudhury, B. & Anand, S. (2017). Rapid thermal annealing treated spin-on doped antireflective radial junction Si nanopillar solar cell. Optics Express, 25(8), A200-A207
Open this publication in new window or tab >>Rapid thermal annealing treated spin-on doped antireflective radial junction Si nanopillar solar cell
2017 (English)In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 25, no 8, p. A200-A207Article in journal (Refereed) Published
Abstract [en]

Radial junction nanopillar Si solar cells are interesting for cost effective efficiency improvement. Here, we address a convenient top-down fabrication of Si nanopillar solar cells using spin-on doping and rapid thermal annealing (RTA) for conformal PN junction formation. Broadband suppressed reflection as low as an average of 5% in the 300-1100 nm wavelength range and un-optimized cell efficiency of 7.3% are achieved. The solar cell performance can be improved by optimization of spin-on-doping and suitable surface passivation. Overall, the all RTA processed, spin-on doped nanopillar radial junction solar cell shows a very promising route for low cost and high efficiency thin film solar cell perspectives.

Place, publisher, year, edition, pages
Optical Society of America, 2017
National Category
Materials Chemistry
Identifiers
urn:nbn:se:kth:diva-207906 (URN)10.1364/OE.25.00A200 (DOI)000400665200001 ()28437915 (PubMedID)2-s2.0-85018502583 (Scopus ID)
Note

QC 20170530

Available from: 2017-05-30 Created: 2017-05-30 Last updated: 2017-11-29Bibliographically approved
Sahoo, P. K., Choudhury, B. D., Joseph, J. & Anand, S. (2017). ZnO nanowire-enabled light funneling effect for antireflection and light convergence applications. Optics Letters, 42(1), 45-48
Open this publication in new window or tab >>ZnO nanowire-enabled light funneling effect for antireflection and light convergence applications
2017 (English)In: Optics Letters, ISSN 0146-9592, E-ISSN 1539-4794, Vol. 42, no 1, p. 45-48Article in journal (Refereed) Published
Abstract [en]

We present a new light trapping technique to reduce reflection loss, as well as for light, focusing at submicron scales for solar cell and image sensing applications. We have fabricated hexagonal arrays of ZnO funnel-like structures on Si substrate by the patterned growth of ZnO nanowires in a hydrothermal growth process. The funnels are optimized so that the effective refractive index along the vertical direction decreases gradually from the Si surface to the top of funnel to reduce Fresnel reflection at a device-air interface. Finite difference time domain simulation is used for optimization of the minimum reflectivity and to analyze optical properties such as angle dependency, polarization dependency, and funneling effect. The structures function similar to a GRIN lens in light trapping and convergence. An optimized structure reduces the average reflectivity close to 3% in the wavelength range of 300-1200 nm with the possibility of confining incident light to a few hundreds of nano-meters.

Place, publisher, year, edition, pages
The Optical Society, 2017
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-200754 (URN)10.1364/OL.42.000045 (DOI)000391396800013 ()2-s2.0-85009742094 (Scopus ID)
Note

QC 20170210

Available from: 2017-02-10 Created: 2017-02-10 Last updated: 2017-11-29Bibliographically approved
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