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Publications (9 of 9) Show all publications
Zichi, J., Chang, J., Steinhauer, S., Von Fieandt, K., Los, J. W. N., Visser, G., . . . Zwiller, V. (2019). Optimizing the stoichiometry of ultrathin NbTiN films for high-performance superconducting nanowire single-photon detectors. Optics Express, 27(19), 26579-26587
Open this publication in new window or tab >>Optimizing the stoichiometry of ultrathin NbTiN films for high-performance superconducting nanowire single-photon detectors
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2019 (English)In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 27, no 19, p. 26579-26587Article in journal (Refereed) Published
Abstract [en]

The requirements in quantum optics experiments for high single-photon detection efficiency. low timing jitter, low dark count rate and short dead time have been fulfilled with the development of superconducting nanowire single-photon detectors. Although they offer a detection efficiency above 90%, achieving a high time resolution in devices made of amorphous materials is a challenge, particularly at temperatures above 0.8 K. Devices made from niobium nitride and niobium titanium nitride allow us to reach the best timing jitter but. in turn, have stronger requirements in terms of film quality to achieve a high efficiency. Here we take advantage of the flexibility of reactive co-sputter deposition to tailor the composition of NbxTi1-xN superconducting films and show that a Nb fraction of x = 0.62 allows for the fabrication of detectors from films as thick as 9 nm and covering an active area of 20 mu m. with a wide detection saturation plateau at telecom wavelengths and in particular at 1550 nm. This is a signature of an internal detection efficiency saturation, achieved while maintaining the high time resolution associated with NbTiN and operation at 2.5K. With our optimized recipe, we reliably fabricated detectors with high critical current densities reaching a saturation plateau at 1550 nm with 80% system detection efficiency and with a FWHM timing jitter as low as 19.5 ps. Open Access Publishing Agreement

Place, publisher, year, edition, pages
OPTICAL SOC AMER, 2019
National Category
Atom and Molecular Physics and Optics
Research subject
Physics, Atomic, Subatomic and Astrophysics
Identifiers
urn:nbn:se:kth:diva-261307 (URN)10.1364/OE.27.026579 (DOI)000486373100026 ()2-s2.0-85072623051 (Scopus ID)
Note

QC 20191008

Available from: 2019-10-08 Created: 2019-10-08 Last updated: 2019-11-20Bibliographically approved
Schöll, E., Hanschke, L., Schweickert, L., Zeuner, K. D., Reindl, M., da Silva, S. F., . . . Jöns, K. D. (2019). Resonance Fluorescence of GaAs Quantum Dots with Near-Unity Photon Indistinguishability. Nano letters (Print), 19(4), 2404-2410
Open this publication in new window or tab >>Resonance Fluorescence of GaAs Quantum Dots with Near-Unity Photon Indistinguishability
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2019 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 19, no 4, p. 2404-2410Article in journal (Refereed) Published
Abstract [en]

Photonic quantum technologies call for scalable quantum light sources that can be integrated, while providing the end user with single and entangled photons on demand. One promising candidate is strain free GaAs/A1GaAs quantum dots obtained by aluminum droplet etching. Such quantum dots exhibit ultra low multi-photon probability and an unprecedented degree of photon pair entanglement. However, different to commonly studied InGaAs/GaAs quantum dots obtained by the Stranski-Krastanow mode, photons with a near-unity indistinguishability from these quantum emitters have proven to be elusive so far. Here, we show on-demand generation of near-unity indistinguishable photons from these quantum emitters by exploring pulsed resonance fluorescence. Given the short intrinsic lifetime of excitons and trions confined in the GaAs quantum dots, we show single photon indistinguishability with a raw visibility of V-raw = (95.0(-6.1)(+5.0))%, without the need for Purcell enhancement. Our results represent a milestone in the advance of GaAs quantum dots by demonstrating the final missing property standing in the way of using these emitters as a key component in quantum communication applications, e.g., as quantum light sources for quantum repeater architectures.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC, 2019
Keywords
Semiconductor quantum dot, resonance fluorescence, indistinguishable photons, Al droplet etching
National Category
Nano Technology
Identifiers
urn:nbn:se:kth:diva-251341 (URN)10.1021/acs.nanolett.8b05132 (DOI)000464769100028 ()30862165 (PubMedID)2-s2.0-85063372001 (Scopus ID)
Note

QC 20190521

Available from: 2019-05-21 Created: 2019-05-21 Last updated: 2019-05-21Bibliographically approved
Zeuner, K. D., Paul, M., Lettner, T., Reuterskiold Hedlund, C., Schweickert, L., Steinhauer, S., . . . Zwiller, V. (2018). A stable wavelength-tunable triggered source of single photons and cascaded photon pairs at the telecom C-band. Applied Physics Letters, 112(17), Article ID 173102.
Open this publication in new window or tab >>A stable wavelength-tunable triggered source of single photons and cascaded photon pairs at the telecom C-band
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2018 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, no 17, article id 173102Article in journal (Refereed) Published
Abstract [en]

The implementation of fiber-based long-range quantum communication requires tunable sources of single photons at the telecom C-band. Stable and easy-to-implement wavelength-tunability of individual sources is crucial to (i) bring remote sources into resonance, (ii) define a wavelength standard, and (iii) ensure scalability to operate a quantum repeater. So far, the most promising sources for true, telecom single photons are semiconductor quantum dots, due to their ability to deterministically and reliably emit single and entangled photons. However, the required wavelength-tunability is hard to attain. Here, we show a stable wavelength-tunable quantum light source by integrating strain-released InAs quantum dots on piezoelectric substrates. We present triggered single-photon emission at 1.55 mu m with a multi-photon emission probability as low as 0.097, as well as photon pair emission from the radiative biexciton-exciton cascade. We achieve a tuning range of 0.25 nm which will allow us to spectrally overlap remote quantum dots or tuning distant quantum dots into resonance with quantum memories. This opens up realistic avenues for the implementation of photonic quantum information processing applications at telecom wavelengths. 

Place, publisher, year, edition, pages
AMER INST PHYSICS, 2018
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-227769 (URN)10.1063/1.5021483 (DOI)000431072800036 ()2-s2.0-85046072975 (Scopus ID)
Funder
Swedish Research Council, 638-2013-7152VINNOVA
Note

QC 20180514

Available from: 2018-05-14 Created: 2018-05-14 Last updated: 2018-05-14Bibliographically approved
Schweickert, L., Jöns, K. D., Lettner, T., Zeuner, K., Zichi, J., Elshaari, A. W., . . . Zwiller, V. (2018). Generating, manipulating and detecting quantum states of light at the nanoscale. In: Optics InfoBase Conference Papers: . Paper presented at Latin America Optics and Photonics Conference, LAOP 2018, 12 November 2018 through 15 November 2018. OSA - The Optical Society
Open this publication in new window or tab >>Generating, manipulating and detecting quantum states of light at the nanoscale
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2018 (English)In: Optics InfoBase Conference Papers, OSA - The Optical Society , 2018Conference paper, Published paper (Refereed)
Abstract [en]

We generate, manipulate and detect light at the single photon level with semiconducting and superconducting nanowires.

Place, publisher, year, edition, pages
OSA - The Optical Society, 2018
Keywords
Light, Particle beams, Photonics, Nano scale, Quantum state, Single-photon level, Superconducting nanowire, Quantum theory
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-247434 (URN)10.1364/LAOP.2018.Tu5D.3 (DOI)2-s2.0-85059482342 (Scopus ID)9781943580491 (ISBN)
Conference
Latin America Optics and Photonics Conference, LAOP 2018, 12 November 2018 through 15 November 2018
Note

QC20190418

Available from: 2019-04-18 Created: 2019-04-18 Last updated: 2019-04-18Bibliographically approved
Schweickert, L., Jöns, K. D., Zeuner, K., da Silva, S. F., Huang, H., Lettner, T., . . . Zwiller, V. (2018). On-demand generation of background-free single photons from a solid-state source. Applied Physics Letters, 112(9), Article ID 093106.
Open this publication in new window or tab >>On-demand generation of background-free single photons from a solid-state source
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2018 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, no 9, article id 093106Article in journal (Refereed) Published
Abstract [en]

True on-demand high-repetition-rate single-photon sources are highly sought after for quantum information processing applications. However, any coherently driven two-level quantum system suffers from a finite re-excitation probability under pulsed excitation, causing undesirable multi-photon emission. Here, we present a solid-state source of on-demand single photons yielding a raw second-order coherence of g((2)) (0) = (7.5 +/- 1.6) x 10(-5) without any background subtraction or data processing. To this date, this is the lowest value of g((2)) (0) Peported for any single-photon source even compared to the previously reported best background subtracted values. We achieve this result on GaAs/AlGaAs quantum dots embedded in a low-Q planar cavity by employing (i) a two-photon excitation process and (ii) a filtering and detection setup featuring two superconducting single-photon detectors with ultralow dark-count rates of (0.0056 +/- 0.0007) s(-1) and (0.017 +/- 0.001) s(-1), respectively. Re-excitation processes are dramatically suppressed by (i), while (ii) removes false coincidences resulting in a negligibly low noise floor.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2018
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-225217 (URN)10.1063/1.5020038 (DOI)000427022500038 ()2-s2.0-85042689547 (Scopus ID)
Funder
Swedish Research Council, 638-2013-7152EU, European Research Council, 679183; 307687
Note

QC 20180404

Available from: 2018-04-04 Created: 2018-04-04 Last updated: 2020-01-16Bibliographically approved
Elshaari, A. W., Buyukozer, E., Zadeh, I. E., Lettner, T., Zhao, P., Schöll, E., . . . Zwiller, V. (2018). Strain-Tunable Quantum Integrated Photonics. Nano letters (Print), 18(12), 7969-7976
Open this publication in new window or tab >>Strain-Tunable Quantum Integrated Photonics
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2018 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 18, no 12, p. 7969-7976Article in journal (Refereed) Published
Abstract [en]

Semiconductor quantum dots are crucial parts of the photonic quantum technology toolbox because they show excellent single-photon emission properties in addition to their potential as solid-state qubits. Recently, there has been an increasing effort to deterministically integrate single semiconductor quantum dots into complex photonic circuits. Despite rapid progress in the field, it remains challenging to manipulate the optical properties of waveguide-integrated quantum emitters in a deterministic, reversible, and nonintrusive manner. Here we demonstrate a new class of hybrid quantum photonic circuits combining III V semiconductors, silicon nitride, and piezoelectric crystals. Using a combination of bottom-up, top-down, and nanomanipulation techniques, we realize strain tuning of a selected, waveguide-integrated, quantum emitter and a planar integrated optical resonator. Our findings are an important step toward realizing reconfigurable quantum-integrated photonics, with full control over the quantum sources and the photonic circuit.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2018
Keywords
Nanowires, strain tuning, quantum dot, quantum integrated photonics, ring resonator, single photon
National Category
Chemical Sciences
Identifiers
urn:nbn:se:kth:diva-240745 (URN)10.1021/acs.nanolett.8b03937 (DOI)000453488800074 ()30474987 (PubMedID)2-s2.0-85058112477 (Scopus ID)
Funder
Swedish Research Council, 2016-03905
Note

QC 20190108

Available from: 2019-01-08 Created: 2019-01-08 Last updated: 2019-01-08Bibliographically approved
Ziss, D., Martin-Sanchez, J., Lettner, T., Halilovic, A., Trevisi, G., Trotta, R., . . . Stangl, J. (2017). Comparison of different bonding techniques for efficient strain transfer using piezoelectric actuators. Journal of Applied Physics, 121(13), Article ID 135303.
Open this publication in new window or tab >>Comparison of different bonding techniques for efficient strain transfer using piezoelectric actuators
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2017 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 121, no 13, article id 135303Article in journal (Refereed) Published
Abstract [en]

In this paper, strain transfer efficiencies from a single crystalline piezoelectric lead magnesium niobatelead titanate substrate to a GaAs semiconductor membrane bonded on top are investigated using state-of-the-art x-ray diffraction (XRD) techniques and finite-element-method (FEM) simulations. Two different bonding techniques are studied, namely, gold-thermo-compression and polymer-based SU8 bonding. Our results show a much higher strain-transfer for the "soft" SU8 bonding in comparison to the "hard" bonding via gold-thermo-compression. A comparison between the XRD results and FEM simulations allows us to explain this unexpected result with the presence of complex interface structures between the different layers.

Place, publisher, year, edition, pages
AMER INST PHYSICS, 2017
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-206251 (URN)10.1063/1.4979859 (DOI)000398636600035 ()2-s2.0-85017180139 (Scopus ID)
Note

QC 20170512

Available from: 2017-05-12 Created: 2017-05-12 Last updated: 2017-06-30Bibliographically approved
Zichi, J., Yang, L., Gyger, S., Lettner, T., Errando-Herranz, C., Jöns, K. D., . . . Zwiller, V.Heterogeneous integration of NbTiN by universal room temperature deposition.
Open this publication in new window or tab >>Heterogeneous integration of NbTiN by universal room temperature deposition
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(English)Manuscript (preprint) (Other academic)
Abstract [en]

Being the Nb-based compound with the highest known critical temperature, NbTiN is of particular interest for many applications. It is used in Josephson junctions for single flux quantum logic gates, as a superconducting electrode to contact semiconductor devices, and one important use is in superconducting nanowire single photon detectors. These detectors are the ideal candidate for on-chip integration in photonic circuits, offering near-unity detection efficiency, low noise and excellent time resolution, therefore it is desirable to implement them on a wide variety of platforms. However, it remains a challenge to deposit the superconducting material with a process suitable for heterogeneous integration, as the most widespread material, NbN, is associated with a deposition at a high temperature. Taking advantage of the possibility to deposit superconducting NbTiN with various stoichiometries by co-sputter deposition at room temperature, we demonstrate growth on six different substrates – silicon dioxide, silicon nitride, gallium arsenide, lithium niobate, [Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] or PMN-PT, and aluminum nitride – in the same deposition run, and show that all the films exhibit superconducting properties with similar critical temperatures. We fabricated waveguide-compatible superconducting nanowire single photon detectors on five substrates, report short dead times for all devices with a narrow spread of performances, and discuss their different photon detection saturation behavior. Our method simplifies the fabrication of superconducting devices on a wide range of materials.

National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-251751 (URN)
Note

QC 20190521

Available from: 2019-05-21 Created: 2019-05-21 Last updated: 2019-05-21Bibliographically approved
Zichi, J., Chang, C., Steinhauer, S., von Fieandt, K., Los, J. W. N., Visser, G., . . . Zwiller, V.NbxTi1-xN low timing jitter single-photon detectors with unity internal detection efficiency at 1550 nm.
Open this publication in new window or tab >>NbxTi1-xN low timing jitter single-photon detectors with unity internal detection efficiency at 1550 nm
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(English)Manuscript (preprint) (Other academic)
Abstract [en]

The requirements in quantum optics experiments for high single photon detectionefficiency, low timing jitter, low dark count rate and short dead time have been fulfilled withthe development of superconducting nanowire single photon detectors. Although they offer adetection efficiency above 90%, achieving a high time resolution in devices made ofamorphous materials is a challenge, particularly at temperatures above 0.8 K. Devices madefrom niobium nitride and niobium titanium nitride allow to reach the best timing jitter, but inturn have stronger requirements in terms of film quality to achieve a high efficiency. Here wetake advantage of the flexibility of reactive co-sputter deposition to tailor the composition ofNbxTi1-xN superconducting films, and show that a Nb fraction of x = 0.62 allows for thefabrication of detectors from films as thick as 9 nm and covering an active area of 20 μm,with a wide detection saturation plateau at telecom wavelengths and in particular at 1550 nm.This is a signature of an internal detection efficiency saturation, achieved while maintainingthe high time resolution associated with NbTiN and operation at 2.5K. With our optimizedrecipe, we reliably fabricated detectors with high critical current densities reaching asaturation plateau at 1550 nm with 80% system detection efficiency, and with a FWHMtiming jitter as low as 19.47 ps.

National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-251747 (URN)
Funder
Swedish Research Council, 2013-7152Knut and Alice Wallenberg Foundation
Note

QC 20190521

Available from: 2019-05-21 Created: 2019-05-21 Last updated: 2019-05-21Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-5814-7510

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