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Ekström, Mattias
Publications (3 of 3) Show all publications
Ekström, M., Hou, S., Elahipanah, H., Salemi, A., Östling, M. & Zetterling, C.-M. (2018). Low temperature Ni-Al ohmic contacts to p-TYPE 4H-SiC using semi-salicide processing. In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017: . Paper presented at International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, United States, 17 September 2017 through 22 September 2017 (pp. 389-392). Trans Tech Publications, 924
Open this publication in new window or tab >>Low temperature Ni-Al ohmic contacts to p-TYPE 4H-SiC using semi-salicide processing
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2018 (English)In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Trans Tech Publications, 2018, Vol. 924, p. 389-392Conference paper, Published paper (Refereed)
Abstract [en]

Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.

Place, publisher, year, edition, pages
Trans Tech Publications, 2018
Series
Materials Science Forum, ISSN 0255-5476 ; 924
Keywords
Ni-Al, P-type ohmic contact, Rapid thermal processing (RTP), Silicon carbide (4H-SiC), Transfer length method (TLM)
National Category
Other Engineering and Technologies
Identifiers
urn:nbn:se:kth:diva-238393 (URN)10.4028/www.scientific.net/MSF.924.389 (DOI)2-s2.0-85049019579 (Scopus ID)9783035711455 (ISBN)
Conference
International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, United States, 17 September 2017 through 22 September 2017
Note

QC 20181108

Available from: 2018-11-08 Created: 2018-11-08 Last updated: 2019-04-29Bibliographically approved
Elahipanah, H., Asadollahi, A., Ekström, M., Salemi, A., Zetterling, C.-M. & Östling, M. (2017). A wafer-scale Ni-salicide contact technology on n-type 4H-SiC. ECS Journal of Solid State Science and Technology, 6(4), P197-P200
Open this publication in new window or tab >>A wafer-scale Ni-salicide contact technology on n-type 4H-SiC
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2017 (English)In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, E-ISSN 2162-8777, Vol. 6, no 4, p. P197-P200Article in journal (Refereed) Published
Abstract [en]

A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed on wafer-level and a contact resistivity below 5 × 10−6 Ω · cm2 is achieved. The influence of the proposed process on the oxide quality is investigated and no significant effect is observed. The proposed self-aligned technology eliminates the undesirable effects of the lift-off process. Moreover, it is simple, fast, and manufacturable at wafer-scale which saves time and cost.

Place, publisher, year, edition, pages
Electrochemical Society, 2017
National Category
Other Engineering and Technologies
Identifiers
urn:nbn:se:kth:diva-219898 (URN)10.1149/2.0041705jss (DOI)000418886800004 ()2-s2.0-85036466021 (Scopus ID)
Note

QC 20171215

Available from: 2017-12-15 Created: 2017-12-15 Last updated: 2018-01-11Bibliographically approved
Ekström, M., Khartsev, S., Östling, M. & Zetterling, C.-M. (2017). Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide. Journal of Electronic Materials, 46(7), 4478-4484
Open this publication in new window or tab >>Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide
2017 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 46, no 7, p. 4478-4484Article in journal (Refereed) Published
Abstract [en]

4H-SiC electronics can operate at high temperature (HT), e.g., 300A degrees C to 500A degrees C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P-E hysteresis loops measured at room temperature showed maximum 2P (r) of 48 mu C/cm(2), large enough for wide read margins. P-E loops were measurable up to 450A degrees C, with losses limiting measurements above 450A degrees C. The phase-transition temperature was determined to be about 660A degrees C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

Place, publisher, year, edition, pages
SPRINGER, 2017
Keywords
Ferroelectric, high temperature (HT), memory device, silicon carbide (4H-SiC), thin film, vanadium-doped bismuth titanate (BiTV)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-210461 (URN)10.1007/s11664-017-5447-3 (DOI)000403016800089 ()2-s2.0-85015704004 (Scopus ID)
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20170706

Available from: 2017-07-06 Created: 2017-07-06 Last updated: 2019-04-29Bibliographically approved
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