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Publications (9 of 9) Show all publications
Shakir, M., Hou, S., Metreveli, A., Rashid, A. U., Mantooth, H. A. & Zetterling, C.-M. (2019). 555-Timer and Comparators Operational at 500 degrees C. IEEE Transactions on Electron Devices, 66(9), 3734-3739
Open this publication in new window or tab >>555-Timer and Comparators Operational at 500 degrees C
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2019 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, no 9, p. 3734-3739Article in journal (Refereed) Published
Abstract [en]

This paper reports an industry standard monolithic 555-timer circuit designed and fabricated in the in-house silicon carbide (SiC) low-voltage bipolar technology. This paper demonstrates the 555-timer integrated circuits (ICs) characterization in both astable and monostable modes of operation, with a supply voltage of 15 V over the wide temperature range of 25 degrees C-500 degrees C. Nonmonotonic temperature dependence was observed for the 555-timer IC frequency, rise time, fall-time, and power dissipation.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2019
Keywords
Bipolar SiC 555-timer integrated circuit (IC), high temperature ( HT) ICs, SiC ICs, transistor-transistor logic (TTL) comparator
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-259423 (URN)10.1109/TED.2019.2925915 (DOI)000482583200005 ()2-s2.0-85071318661 (Scopus ID)
Note

QC 20190924

Available from: 2019-09-24 Created: 2019-09-24 Last updated: 2019-09-24Bibliographically approved
Shakir, M. (2019). 555-Timer IC Operational at 500 °C. Bipolar SiC 555-timer IC, High Temperature ICs, TTL Comparator, SiC Integrated Circuits
Open this publication in new window or tab >>555-Timer IC Operational at 500 °C
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2019 (English)In: Bipolar SiC 555-timer IC, High Temperature ICs, TTL Comparator, SiC Integrated CircuitsArticle in journal (Other academic) [Artistic work] Submitted
Abstract [en]

This paper reports an industry standard monolithic 555-timer circuit designed and fabricated in the in-house silicon carbide (SiC) low-voltage bipolar technology. The paper demonstrates the 555-timer ICs characterization in both astable and monostable modes of operation, with a supply voltage of 15 V over the wide temperature range of 25 to 500°C. Nonmonotonictemperature dependence was observed for the 555-timer IC frequency, rise-time, fall-time, and power dissipation.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-251765 (URN)
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20190523

Available from: 2019-05-21 Created: 2019-05-21 Last updated: 2019-05-23Bibliographically approved
Hou, S., Hellström, P.-E., Zetterling, C.-M. & Östling, M. (2019). A 4H-SiC BJT as a Switch for On-Chip Integrated UV Photodiode. IEEE Electron Device Letters, 40(1), 51-54
Open this publication in new window or tab >>A 4H-SiC BJT as a Switch for On-Chip Integrated UV Photodiode
2019 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 40, no 1, p. 51-54Article in journal (Refereed) Published
Abstract [en]

This letter presents the design, fabrication, and characterization of a 4H-SiC n-p-n bipolar junction transistor as a switch controlling an on-chip integrated p-i-n photodiode. The transistor and photodiode share the same epitaxial layers and topside contacts for each terminal. By connecting the collector of the transistor and the anode of the photodiode, the photo current from the photodiode is switched off at low base voltage (cutoff region of the transistor) and switched on at high base voltage (saturation region of the transistor). The transfer voltage of the circuit decreases as the ambient temperature increases (2 mV/degrees C). Both the on-state and off-state current of the circuit have a positive temperature coefficient and the on/off ratio is >80 at temperature ranged from 25 degrees C to 400 degrees C. It is proposed that the on/off ratio can be increased by similar to 1000 times by adding a light blocking layer on the transistor to reduce light induced off-state current in the circuit.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2019
Keywords
4H-SiC, BJT, UV, photodiode, high temperature, switch
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-242990 (URN)10.1109/LED.2018.2883749 (DOI)000456172600013 ()2-s2.0-85057777289 (Scopus ID)
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20190204

Available from: 2019-02-04 Created: 2019-02-04 Last updated: 2019-04-10Bibliographically approved
Shakir, M., Hou, S. & Zetterling, C.-M. (2019). A Monolithic 500 °C D-flip flop Realized in Bipolar 4H-SiC TTL technology. In: : . Paper presented at Materials Science Forum, Proceedings of European Conference on Silicon Carbide and Related Materials 2018.
Open this publication in new window or tab >>A Monolithic 500 °C D-flip flop Realized in Bipolar 4H-SiC TTL technology
2019 (English)Conference paper, Poster (with or without abstract) (Other academic) [Artistic work]
Keywords
TTL-based DFF, Bipolar SiC integrated circuits, High-temperature integrated circuits (ICs), Transistor-transistor logic (TTL), Bipolar junction transistor (BJT), Digital gates
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-251764 (URN)
Conference
Materials Science Forum, Proceedings of European Conference on Silicon Carbide and Related Materials 2018
Note

QC 20190523

Available from: 2019-05-21 Created: 2019-05-21 Last updated: 2019-05-23Bibliographically approved
Shakir, M., Hou, S., Hedayati, R., Malm, B. G., Östling, M. & Zetterling, C.-M. (2019). Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications. Electronics, 8(5)
Open this publication in new window or tab >>Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications
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2019 (English)In: Electronics, ISSN 2079-9292, Vol. 8, no 5Article in journal (Other academic) Published
Abstract [en]

A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK development process included basic device modeling, and design of gate library and parameterized cells. A transistor–transistor logic (TTL)-based PDK gate library design will also be discussed with delay, power, noise margin, and fan-out as main design criterion to tolerate the threshold voltage shift, beta (β) and collector current (IC) variation of SiC devices as temperature increases. The PDK-based complex digital ICsdesign flow based on layout, physical verification, and in-house fabrication process will also be demonstrated. Both combinational and sequential circuits have been designed, such as a 720-device ALU and a 520-device 4 bit counter. All the integrated circuits and devices are fully characterized up to 500 °C. The inverter and a D-type flip-flop (DFF) are characterized as benchmark standard cells. The proposed work is a key step towards SiC-based very large-scale integrated (VLSI) circuits implementation for high-temperature applications.

Keywords
Process Design Kit (PDK); bipolar logic gates; high temperature digital integrated circuits (ICs); transistor–transistor logic (TTL); SiC bipolar transistor; SiC VLSI Circuits
National Category
Engineering and Technology Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-248424 (URN)10.3390/electronics8050496 (DOI)000470999900027 ()2-s2.0-85067024612 (Scopus ID)
Funder
Knut and Alice Wallenberg Foundation, Working on Venus
Note

QC 20190410

Available from: 2019-04-08 Created: 2019-04-08 Last updated: 2019-10-09Bibliographically approved
Shakir, M., Hou, S., Malm, B. G., Östling, M. & Zetterling, C.-M. (2018). A 600 degrees C TTL-Based 11-Stage Ring Oscillator in Bipolar Silicon Carbide Technology. IEEE Electron Device Letters, 39(10), 1540-1543
Open this publication in new window or tab >>A 600 degrees C TTL-Based 11-Stage Ring Oscillator in Bipolar Silicon Carbide Technology
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2018 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, no 10, p. 1540-1543Article in journal (Refereed) Published
Abstract [en]

Ring oscillators (ROs) are used to study the high-temperature characteristics of an in-house silicon carbide (SiC) technology. Design and successful operation of the in-house-fabricated 4H-SiC n-p-n bipolar transistors and TTL inverter-based 11-stage RO are reported from 25 degrees C to 600 degrees C. Non-monotonous temperature dependence was observed for the oscillator frequency; in the range of 25 degrees C to 300 degrees C, it increased with the temperature (1.33 MHz at 300 degrees C and V-CC = 15 V), while it decreased in the range of 300 degrees C-600 degrees C. The oscillator output frequency and delay were also characterized over a wide range of supply voltage (10 to 20 V). The noise margins of the TTL inverter were also measured; noise margin low (NML) decreases with the temperature, whereas noise margin high (NMH) increases with the temperature. The measured power-delay product (P-D . T-P) of the TTL inverter and 11-stage RO was approximate to 4.5 and approximate to 285 nJ, respectively, at V-CC= 15 V. Reliability testing indicated that the RO frequency of oscillation decreased 16% after HT characterization.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018
Keywords
Ring oscillator, TTL gates, Bipolar SiC gates, high temperature digital integrated circuits (ICs), transistor-transistor logic, silicon carbide electronics
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-237111 (URN)10.1109/LED.2018.2864338 (DOI)000446449300014 ()2-s2.0-85050029554 (Scopus ID)
Note

QC 20181120

Available from: 2018-11-20 Created: 2018-11-20 Last updated: 2019-05-23Bibliographically approved
Ekström, M., Hou, S., Elahipanah, H., Salemi, A., Östling, M. & Zetterling, C.-M. (2018). Low temperature Ni-Al ohmic contacts to p-TYPE 4H-SiC using semi-salicide processing. In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017: . Paper presented at International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, United States, 17 September 2017 through 22 September 2017 (pp. 389-392). Trans Tech Publications, 924
Open this publication in new window or tab >>Low temperature Ni-Al ohmic contacts to p-TYPE 4H-SiC using semi-salicide processing
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2018 (English)In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Trans Tech Publications, 2018, Vol. 924, p. 389-392Conference paper, Published paper (Refereed)
Abstract [en]

Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.

Place, publisher, year, edition, pages
Trans Tech Publications, 2018
Series
Materials Science Forum, ISSN 0255-5476 ; 924
Keywords
Ni-Al, P-type ohmic contact, Rapid thermal processing (RTP), Silicon carbide (4H-SiC), Transfer length method (TLM)
National Category
Other Engineering and Technologies
Identifiers
urn:nbn:se:kth:diva-238393 (URN)10.4028/www.scientific.net/MSF.924.389 (DOI)2-s2.0-85049019579 (Scopus ID)9783035711455 (ISBN)
Conference
International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, United States, 17 September 2017 through 22 September 2017
Note

QC 20181108

Available from: 2018-11-08 Created: 2018-11-08 Last updated: 2019-04-29Bibliographically approved
Hou, S., Hellström, P.-E., Zetterling, C.-M. & Östling, M. (2018). Scaling and modeling of high temperature 4H-SiC p-i-n photodiodes. IEEE Journal of the Electron Devices Society, 6(1), 139-145, Article ID 8240922.
Open this publication in new window or tab >>Scaling and modeling of high temperature 4H-SiC p-i-n photodiodes
2018 (English)In: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 6, no 1, p. 139-145, article id 8240922Article in journal (Refereed) Published
Abstract [en]

4H-SiC p-i-n photodiodes with various mesa areas (40,000μm2, 2500μm2, 1600μm2, and 400μm2) have been fabricated. Both C-V and I-V characteristics of the photodiodes have been measured at room temperature, 200 °C, 400 °C, and 500 °C. The capacitance and photo current (at 365 nm) of the photodiodes are directly proportional to the area. However, the dark current density increases as the device is scaled down due to the perimeter surface recombination effect. The photo to dark current ratio at the full depletion voltage of the intrinsic layer (-2.7 V) of the photodiode at 500 °C decreases 7 times as the size of the photodiode scales down 100 times. The static and dynamic behavior of the photodiodes are modeled with SPICE parameters at the four temperatures.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc., 2018
Keywords
4H-SiC, high temperature, photodiode, scaling, Capacitance, Photodiodes, Silicon carbide, Dark current ratio, Full-depletion voltage, IV characteristics, Static and dynamic behaviors, Surface recombinations, Silicon compounds
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-223196 (URN)10.1109/JEDS.2017.2785618 (DOI)000423582900022 ()2-s2.0-85040046747 (Scopus ID)
Funder
Knut and Alice Wallenberg Foundation
Note

Export Date: 13 February 2018; Article; Correspondence Address: Hou, S.; School of Information and Communication Technology, KTH Royal Institute of TechnologySweden; email: shuoben@kth.se; Funding details: Knut och Alice Wallenbergs Stiftelse; Funding details: KTH, Kungliga Tekniska Högskolan. QC 20180228

Available from: 2018-02-28 Created: 2018-02-28 Last updated: 2019-04-10Bibliographically approved
Hou, S., Hellström, P.-E., Zetterling, C.-M. & Östling, M. (2017). 4H-SiC PIN diode as high temperature multifunction sensor. In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016: . Paper presented at 25 September 2016 through 29 September 2016 (pp. 630-633). Trans Tech Publications Ltd
Open this publication in new window or tab >>4H-SiC PIN diode as high temperature multifunction sensor
2017 (English)In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Trans Tech Publications Ltd , 2017, p. 630-633Conference paper (Refereed)
Abstract [en]

An in-house fabricated 4H-SiC PIN diode that has both optical sensing and temperature sensing functions from room temperature (RT) to 550 ºC is presented. The two sensing functions can be simply converted from one to the other by switching the bias voltage on the diode. The optical responsivity of the diode at 365 nm is 31.8 mA/W at 550 ºC. The temperature sensitivity of the diode is 2.7 mV/ºC at the forward current of 1 μA.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd, 2017
Keywords
4H-SiC, High Temperature, PIN Diode, Sensor
National Category
Materials Engineering
Identifiers
urn:nbn:se:kth:diva-216564 (URN)10.4028/www.scientific.net/MSF.897.630 (DOI)2-s2.0-85020034685 (Scopus ID)9783035710434 (ISBN)
Conference
25 September 2016 through 29 September 2016
Note

QC 20171108

Available from: 2017-11-08 Created: 2017-11-08 Last updated: 2017-11-08Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0001-8854-7446

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