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Hussain, Muhammad WaqarORCID iD iconorcid.org/0000-0003-2540-8726
Publications (4 of 4) Show all publications
Hussain, M. W., Elahipanah, H., Schröder, S., Rodriguez, S., Malm, B. G., Östling, M. & Rusu, A. (2019). An Intermediate Frequency Amplifier for High-Temperature Applications (vol 65, pg 1411, 2018). IEEE Transactions on Electron Devices, 66(8), 3694-3694
Open this publication in new window or tab >>An Intermediate Frequency Amplifier for High-Temperature Applications (vol 65, pg 1411, 2018)
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2019 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, no 8, p. 3694-3694Article in journal (Refereed) Published
Abstract [en]

This correspondence highlights an error in the above-titled paper. The corrected material is presented here.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2019
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-256255 (URN)10.1109/TED.2019.2924540 (DOI)000477697400069 ()2-s2.0-85069926790 (Scopus ID)
Note

QC 20191025

Available from: 2019-10-25 Created: 2019-10-25 Last updated: 2019-10-25Bibliographically approved
Hussain, M. W., Elahipanah, H., Rodriguez, S., Malm, B. G. & Rusu, A. (2019). Silicon carbide BJT oscillator design using S-parameters. In: Silicon Carbide and Related Materials 2018: . Paper presented at 12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018. (pp. 674-678). Trans Tech Publications Ltd
Open this publication in new window or tab >>Silicon carbide BJT oscillator design using S-parameters
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2019 (English)In: Silicon Carbide and Related Materials 2018, Trans Tech Publications Ltd , 2019, p. 674-678Conference paper, Published paper (Refereed)
Abstract [en]

Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation is further aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, an alternative small-signal, S-parameter based design method can be employed directly without going into complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 °C) was accessed by on-wafer probing and connected by RF-cables to the rest of circuit passives, which were kept at room temperature (RT).

Place, publisher, year, edition, pages
Trans Tech Publications Ltd, 2019
Series
Materials Science Forum, ISSN 1662-9752 ; 963
Keywords
4H-SiC BJT, RF oscillator, S-parameters, Bipolar transistors, Design, Extraction, Parameter extraction, Silicon carbide, Silicon wafers, Elevated temperature, High frequency simulation, High temperature, Oscillator design, Radio frequencies, SiC BJT, Wide temperature ranges, Scattering parameters
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-262429 (URN)10.4028/www.scientific.net/MSF.963.674 (DOI)2-s2.0-85071839366 (Scopus ID)9783035713329 (ISBN)978-3-0357-3332-7 (ISBN)
Conference
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018.
Note

QC 20191104

Available from: 2019-11-04 Created: 2019-11-04 Last updated: 2019-11-04Bibliographically approved
Hussain, M. W., Elahipanah, H., Zumbro, J. E., Schröder, S., Rodriguez, S., Malm, B. G., . . . Rusu, A. (2018). A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology. IEEE Electron Device Letters, 39(6), 855-858
Open this publication in new window or tab >>A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology
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2018 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, no 6, p. 855-858Article in journal (Refereed) Accepted
Abstract [en]

This letter presents an active down-conversion mixer for high-temperature communication receivers. The mixer is based on an in-house developed 4H-SiC BJT and down-converts a narrow-band RF input signal centered around 59 MHz to an intermediate frequency of 500 kHz. Measurements show that the mixer operates from room temperature up to 500 °C. The conversion gain is 15 dB at 25 °C, which decreases to 4.7 dB at 500 °C. The input 1-dB compression point is 1 dBm at 25 °C and −2.5 dBm at 500 °C. The mixer is biased with a collector current of 10 mA from a 20 V supply and has a maximum DC power consumption of 204 mW. High-temperature reliability evaluation of the mixer shows a conversion gain degradation of 1.4 dB after 3-hours of continuous operation at 500 °C.

Place, publisher, year, edition, pages
IEEE Press, 2018
Keywords
4H-SiC BJTs, high-temperature, RF, mixer
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-228486 (URN)10.1109/LED.2018.2829628 (DOI)000437086800018 ()2-s2.0-85045754083 (Scopus ID)
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20180601

Available from: 2018-05-25 Created: 2018-05-25 Last updated: 2019-04-24Bibliographically approved
Hussain, M. W., Elahipanah, H., Rodriguez, S., Malm, B. G. & Rusu, A. (2018). Silicon Carbide BJT Oscillator Design Using S-Parameters. In: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018.: . Paper presented at 12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018..
Open this publication in new window or tab >>Silicon Carbide BJT Oscillator Design Using S-Parameters
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2018 (English)In: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018., 2018Conference paper, Poster (with or without abstract) (Refereed)
Abstract [en]

Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation isfurther aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, analternative small-signal, S-parameter based design method can be employed directly without goinginto complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 0C) was accessed by on-wafer probing and connectedby RF-cables to the rest of circuit passives, which were kept at room temperature (RT).

Keywords
RF oscillator, 4H-SiC BJT, S-parameters
National Category
Materials Engineering
Identifiers
urn:nbn:se:kth:diva-249685 (URN)
Conference
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018.
Funder
Knut and Alice Wallenberg Foundation, 66167
Note

Accepted for publication in Materials Science Forum.

QC 20190507

Available from: 2019-04-17 Created: 2019-04-17 Last updated: 2019-05-07Bibliographically approved
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ORCID iD: ORCID iD iconorcid.org/0000-0003-2540-8726

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