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Errando-Herranz, C., Schöll, E., Picard, R., Laini, M., Gyger, S., Elshaari, A. W., . . . Jöns, K. D. (2021). Resonance Fluorescence from Waveguide-Coupled, Strain-Localized, Two-Dimensional Quantum Emitters. ACS Photonics, 8(4), 1069-1076
Open this publication in new window or tab >>Resonance Fluorescence from Waveguide-Coupled, Strain-Localized, Two-Dimensional Quantum Emitters
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2021 (English)In: ACS Photonics, E-ISSN 2330-4022, Vol. 8, no 4, p. 1069-1076Article in journal (Refereed) Published
Abstract [en]

Efficient on-chip integration of single-photon emitters imposes a major bottleneck for applications of photonic integrated circuits in quantum technologies. Resonantly excited solid-state emitters are emerging as near-optimal quantum light sources, if not for the lack of scalability of current devices. Current integration approaches rely on cost-inefficient individual emitter placement in photonic integrated circuits, rendering applications impossible. A promising scalable platform is based on two-dimensional (2D) semiconductors. However, resonant excitation and single-photon emission of waveguide-coupled 2D emitters have proven to be elusive. Here, we show a scalable approach using a silicon nitride photonic waveguide to simultaneously strain-localize single-photon emitters from a tungsten diselenide (WSe2) monolayer and to couple them into a waveguide mode. We demonstrate the guiding of single photons in the photonic circuit by measuring second-order autocorrelation of g((2))(0) = 0.150 +/- 0.093 and perform on-chip resonant excitation, yielding a g((2))(0) = 0.377 +/- 0.081. Our results are an important step to enable coherent control of quantum states and multiplexing of high-quality single photons in a scalable photonic quantum circuit.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2021
Keywords
two-dimensional materials, single-photon emitter, photonic integrated circuit, quantum photonics, resonance fluorescence, strain engineering
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-296210 (URN)10.1021/acsphotonics.0c01653 (DOI)000643600400016 ()34056034 (PubMedID)2-s2.0-85105036567 (Scopus ID)
Note

QC 20210601

Available from: 2021-06-01 Created: 2021-06-01 Last updated: 2022-06-25Bibliographically approved
Branny, A., Didier, P., Zichi, J., Zadeh, I. E., Steinhauer, S., Zwiller, V. & Vogt, U. (2021). X-Ray Induced Secondary Particle Counting With Thin NbTiN Nanowire Superconducting Detector. IEEE transactions on applied superconductivity (Print), 31(4), Article ID 2200305.
Open this publication in new window or tab >>X-Ray Induced Secondary Particle Counting With Thin NbTiN Nanowire Superconducting Detector
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2021 (English)In: IEEE transactions on applied superconductivity (Print), ISSN 1051-8223, E-ISSN 1558-2515, Vol. 31, no 4, article id 2200305Article in journal (Refereed) Published
Abstract [en]

We characterized the performance of abiased superconducting nanowire to detect X-ray photons. The device, made of a 10 nm thin NbTiN film and fabricated on a dielectric substrate (SiO2, Nb3O5) detected 1000 times larger signal than anticipated from direct X-ray absorption. We attributed this effect to X-ray induced generation of secondary particles in the substrate. The enhancement corresponds to an increase in the flux by the factor of 3.6, relative to a state-of-the-art commercial X-ray silicon drift detector. The detector exhibited 8.25 ns temporal recovery time and 82 ps timing resolution, measured using optical photons. Our results emphasize the importance of the substrate in superconducting X-ray single photon detectors.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2021
Keywords
Nanowire single photon detector, niobium titanium nitride, superconducting thin film, X-ray detection
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-295834 (URN)10.1109/TASC.2021.3066578 (DOI)000649704900003 ()2-s2.0-85103192843 (Scopus ID)
Note

QC 20210528

Available from: 2021-05-28 Created: 2021-05-28 Last updated: 2022-06-25Bibliographically approved
Brotons-Gisbert, M., Branny, A., Kumar, S., Picard, R., Proux, R., Gray, M., . . . Gerardot, B. D. (2019). Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir. Nature Nanotechnology, 14(5), 442-446
Open this publication in new window or tab >>Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir
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2019 (English)In: Nature Nanotechnology, ISSN 1748-3387, E-ISSN 1748-3395, Vol. 14, no 5, p. 442-446Article in journal (Refereed) Published
Abstract [en]

Gate-tunable quantum-mechanical tunnelling of particles between a quantum confined state and a nearby Fermi reservoir of delocalized states has underpinned many advances in spintronics and solid-state quantum optics. The prototypical example is a semiconductor quantum dot separated from a gated contact by a tunnel barrier. This enables Coulomb blockade, the phenomenon whereby electrons or holes can be loaded one-by-one into a quantum dot(1,2). Depending on the tunnel-coupling strength(3,4), this capability facilitates single spin quantum bits(1,2,5) or coherent many-body interactions between the confined spin and the Fermi reservoirs(6,7). Van der Waals (vdW) heterostructures, in which a wide range of unique atomic layers can easily be combined, offer novel prospects to engineer coherent quantum confined spins(8,9), tunnel barriers down to the atomic limit(10) or a Fermi reservoir beyond the conventional flat density of states(11). However, gate-control of vdW nanostructuresu(12-16) at the single particle level is needed to unlock their potential. Here we report Coulomb blockade in a vdW heterostructure consisting of a transition metal dichalcogenide quantum dot coupled to a graphene contact through an atomically thin hexagonal boron nitride (hBN) tunnel barrier. Thanks to a tunable Fermi reservoir, we can deterministically load either a single electron or a single hole into the quantum dot. We observe hybrid excitons, composed of localized quantum dot states and delocalized continuum states, arising from ultra-strong spin-conserving tunnel coupling through the atomically thin tunnel barrier. Probing the charged excitons in applied magnetic fields, we observe large gyromagnetic ratios (similar to 8). Our results establish a foundation for engineering next-generation devices to investigate either novel regimes of Kondo physics or isolated quantum bits in a vdW heterostructure platform.

Place, publisher, year, edition, pages
NATURE PUBLISHING GROUP, 2019
National Category
Nano Technology
Identifiers
urn:nbn:se:kth:diva-252393 (URN)10.1038/s41565-019-0402-5 (DOI)000467053100020 ()30858522 (PubMedID)2-s2.0-85062868278 (Scopus ID)
Note

QC 20190717

Available from: 2019-07-17 Created: 2019-07-17 Last updated: 2022-06-26Bibliographically approved
Brotons-Gisbert, M., Proux, R., Picard, R., Andres-Penares, D., Branny, A., Molina-Sanchez, A., . . . Gerardot, B. D. (2019). Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide. Nature Communications, 10, Article ID 3913.
Open this publication in new window or tab >>Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide
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2019 (English)In: Nature Communications, E-ISSN 2041-1723, Vol. 10, article id 3913Article in journal (Refereed) Published
Abstract [en]

Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe2 and MoSe2. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe2 and MoSe2 at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.

Place, publisher, year, edition, pages
Springer Nature, 2019
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-259420 (URN)10.1038/s41467-019-11920-4 (DOI)000483305400004 ()31477714 (PubMedID)2-s2.0-85071752850 (Scopus ID)
Note

QC 20220503

Available from: 2019-09-24 Created: 2019-09-24 Last updated: 2023-03-28Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0003-3458-4684

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