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Study of the slow-wave interaction in a three valley semiconductor in high electric fields
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0002-9746-1537
KTH, School of Electrical Engineering (EES).ORCID iD: 0000-0003-1443-403X
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0003-3339-9137
2017 (English)In: 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, IEEE Computer Society, 2017, article id 8066856Conference paper, Published paper (Refereed)
Abstract [en]

The interaction of a slow-wave in a corrugated dielectric waveguide with drifting electron gas in a semiconductor with the multi-valleys conduction band is studied in the linear model. Contribution of each valley into the net loss/amplification is investigated. Substantial amplification is possible in large fields due to slow-wave interaction with carriers in satellite valleys.

Place, publisher, year, edition, pages
IEEE Computer Society, 2017. article id 8066856
Series
International Conference on Infrared Millimeter and Terahertz Waves, ISSN 2162-2027
Keywords [en]
Electric fields, Electron gas, Landforms, High electric fields, Linear modeling, Net loss, Slow wave, Terahertz waves
National Category
Fusion, Plasma and Space Physics
Identifiers
URN: urn:nbn:se:kth:diva-227089DOI: 10.1109/IRMMW-THz.2017.8066856ISI: 000784176700011Scopus ID: 2-s2.0-85033668838OAI: oai:DiVA.org:kth-227089DiVA, id: diva2:1206040
Conference
42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017, 27 August 2017 through 1 September 2017, Cancun, Quintana Roo
Note

QC 20220922

Part of proceedings: ISBN 978-150906048-1; 978-1-5090-6050-4

Available from: 2018-05-15 Created: 2018-05-15 Last updated: 2022-11-30Bibliographically approved

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Makhalov, Petr B.Lioubtchenko, DmitriOberhammer, Joachim

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