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A 140 GHz Transmitter with an Integrated Chip-to-Waveguide Transition using 130nm SiGe BiCMOS Process
Chalmers Univ Technol, Dept Microtechnol & Nanosci, Microwave Elect Lab, S-41296 Gothenburg, Sweden..
Ericsson Res, Stockholm, Sweden..
Ericsson Res, Stockholm, Sweden..
Chalmers Univ Technol, Dept Microtechnol & Nanosci, Microwave Elect Lab, S-41296 Gothenburg, Sweden..
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2018 (English)In: 2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC), IEEE , 2018, p. 28-30Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with f(t)/f(max) values of 250 GHz/ 370 GHz. This design comprises of a frequency sixtupler, a balanced transconductance mixer, an amplifier and chip-to-waveguide transition. The frequency multiplier operates in wide frequency band from 110-147 GHz, while the amplifier operates between 115-155 GHz. The total DC power consumption of the chipset is 420 mW. The chip size is 3 mm x 0.73 mm including chip-to-waveguide transition. The transmitter gives -4 dBm output power at 140 GHz and can operate between 129-148 GHz. Wireless data transmission up to 6 Gbps is measured using PSK and QAM modulation schemes.

Place, publisher, year, edition, pages
IEEE , 2018. p. 28-30
Keywords [en]
D-band, transmitter chipset, mixer, SiGe BiCMOS, chip-to-waveguide transition
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering Telecommunications
Identifiers
URN: urn:nbn:se:kth:diva-244583ISI: 000457599800010Scopus ID: 2-s2.0-85061778811OAI: oai:DiVA.org:kth-244583DiVA, id: diva2:1294145
Conference
30th Asia-Pacific Microwave Conference, APMC 2018; Kyoto; Japan; 6 November 2018 through 9 November 2018
Note

QC 20190306

Available from: 2019-03-06 Created: 2019-03-06 Last updated: 2019-03-06Bibliographically approved

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Campion, JamesOberhammer, Joachim

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Citation style
  • apa
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