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500 degrees C SiC PWM Integrated Circuit
Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA..
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0002-7845-3988
DIEGM Univ Udine, I-33100 Udine, Italy..
Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA..
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2019 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 34, no 3, p. 1997-2001Article in journal (Refereed) Published
Abstract [en]

This letter reports on a high-temperature pulsewidth modulation (PWM) integrated circuit microfabricated in 4H-SiC bipolar process technology that features an on-chip integrated ramp generator. The circuit has been characterized and shown to be operational in a wide temperature range from 25 to 500 degrees C. The operating frequency of the PWM varies in the range of 160 to 210 kHz and the duty cycle varies less than 17% over the entire temperature range. The proposed PWM is suggested to efficiently and reliably control power converters in extreme environments.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2019. Vol. 34, no 3, p. 1997-2001
Keywords [en]
Bipolar junction transistor (BJT), high-temperature integrated circuit (IC), pulsewidth modulator (PWM), silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-244489DOI: 10.1109/TPEL.2018.2859430ISI: 000458179200003Scopus ID: 2-s2.0-85050612857OAI: oai:DiVA.org:kth-244489DiVA, id: diva2:1298064
Note

QC 20190321

Available from: 2019-03-21 Created: 2019-03-21 Last updated: 2019-03-21Bibliographically approved

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Elahipanah, HosseinZetterling, Carl-Mikael

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