Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss
KTH, Superseded Departments (pre-2005), Electronics. KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0002-8760-1137
Show others and affiliations
2019 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, no 5, p. 2307-2313Article in journal (Refereed) Published
Abstract [en]

In this paper, an improved 4H-SiC U-shaped trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) structure with low ON-resistance (R-ON) and switching energy loss is proposed. The novel structure features an added n-type region, which reduces ON-resistance of the device significantly while maintaining the breakdown voltage (V-BR). In addition, the gate of the improved structure is designed as a p-n junction to reduce the switching energy loss. Simulations by Sentaurus TCAD are carried out to reveal the working mechanism of this improved structure. For the static performance, the ON-resistance and the figure of merit (FOM = V-BR(2)/R-ON) of the optimized structure are improved by 40% and 44%, respectively, as compared to a conventional trench MOSFET without the added n-type region and modified gate. For the dynamic performance, the turn-on time (T-ON) and turn-off time (T-OFF) of the proposed structure are both shorter than that of the conventional structure, bringing a 43% and 30% reduction in turn-on energy loss and total switching energy loss (E-SW).

Place, publisher, year, edition, pages
2019. Vol. 66, no 5, p. 2307-2313
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-252987DOI: 10.1109/TED.2019.2905636ISI: 000466028500041OAI: oai:DiVA.org:kth-252987DiVA, id: diva2:1342816
Note

QC 20190814

Available from: 2019-08-14 Created: 2019-08-14 Last updated: 2019-08-14Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Authority records BETA

Hallén, Anders

Search in DiVA

By author/editor
Tian, KaiHallén, AndersLiu, Weihua
By organisation
ElectronicsIntegrated devices and circuits
In the same journal
IEEE Transactions on Electron Devices
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 13 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf