The concept of semiconductor slow wave amplifier aimed at sub-terahetz frequencies is studied numerically. The scheme of the transversal amplifier with metal grating is proposed. The requirements on semiconductor parameters that provide positive net amplification are given and discussed, and the choice of GaN is explained. For the proposed device, different regimes are studied, and the dependence of the net amplification on device parameters is given. One regime has high linear gain, more than 50 dB/mm. The proof-of-principle structure for the excitation of the device in this regime is proposed and simulated.