Impact of barrier height on the interwell carrier transport in InGaN/(In)GaN multiple quantum wellsShow others and affiliations
2019 (English)In: Optics InfoBase Conference Papers, OSA - The Optical Society , 2019Conference paper, Published paper (Refereed)
Abstract [en]
Interwell carrier transport, important for efficient LED and laser diode operation, was studied in InGaN multiple quantum wells by time-resolved photoluminescence. A strong increase in transport efficiency was achieved in structures in which GaN barriers were replaced with that of InGaN.
Place, publisher, year, edition, pages
OSA - The Optical Society , 2019.
Keywords [en]
Gallium nitride, III-V semiconductors, Quantum chemistry, Quantum well lasers, Semiconductor alloys, Solid state lasers, Barrier heights, Time-resolved photoluminescence, Transport efficiency, Semiconductor quantum wells
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-274813DOI: 10.1364/ASSL.2019.JW2A.27Scopus ID: 2-s2.0-85084558683OAI: oai:DiVA.org:kth-274813DiVA, id: diva2:1445564
Conference
Advanced Solid State Lasers, ASSL_2019, 29 September - 3 October 2019, Vienna, Switzerland
Note
Duplicate record in Scopus 2-s2.0-85086286877
QC 20200623
Part of ISBN 9781557528209
2020-06-232020-06-232024-10-25Bibliographically approved