Engineering of quantum barriers for efficient InGaN quantum well LEDs Number of Authors: 72022 (English)In: Novel Optical Materials and Applications, NOMA 2022, Optica Publishing Group (formerly OSA) , 2022, article id NoW4D.6Conference paper, Published paper (Refereed)

Abstract [en]

Ways to improve efficiency of high-power LEDs based on InGaN/(In)GaN multiple quantum wells are explored by studying interwell carrier transport and recombination. Best results are achieved for InGaN barriers with thin GaN or AlGaN interlayers.

Place, publisher, year, edition, pages

Optica Publishing Group (formerly OSA) , 2022. article id NoW4D.6

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Atom and Molecular Physics and Optics

Identifiers

URN: urn:nbn:se:kth:diva-333449Scopus ID: 2-s2.0-85146691995OAI: oai:DiVA.org:kth-333449DiVA, id: diva2:1785212

Conference

Novel Optical Materials and Applications, NOMA 2022, Maastricht, Netherlands, Kingdom of the, Jul 24 2022 - Jul 28 2022

Note

Part of ISBN 9781557528209

QC 20230801

Available from: 2023-08-01 Created: 2023-08-01 Last updated: 2023-08-01Bibliographically approved

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Yapparov, RinatMarcinkevičius, Saulius

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Yapparov, RinatMarcinkevičius, Saulius

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Applied Physics

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Atom and Molecular Physics and Optics

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