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Peculiarities of the Formation and Growth of Thin Gold Films on the Surface of Gallium Arsenide during Thermal Evaporation in Vacuum
Russian Acad Sci, Inst Radioengn & Elect, Fryazino Branch, Fryazino 141120, Moscow Oblast, Russia..
Russian Acad Sci, Inst Radioengn & Elect, Fryazino Branch, Fryazino 141120, Moscow Oblast, Russia..
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0003-1443-403X
Russian Acad Sci, Inst Radioengn & Elect, Fryazino Branch, Fryazino 141120, Moscow Oblast, Russia..
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2023 (English)In: Journal of communications technology & electronics, ISSN 1064-2269, E-ISSN 1555-6557, Vol. 68, no 5, p. 566-574Article in journal (Refereed) Published
Abstract [en]

Changes in the morphology and structure of the GaAs surface during the deposition of an Au film by thermal evaporation in vacuum have been studied. It has been found that the deposition of an Au film with the participation of a flow of particles and light from a heated evaporator causes the appearance of photo effects in the near-surface GaAs layers, including light diffraction on surface acoustic waves, the growth of whiskers, and electron emission, which leads to the formation of microcracks on the GaAs surface and the growth of GaAs crystallites. It is shown that the structure and composition of the film boundaries of Au and GaAs surfaces depend on the electron concentration in gallium arsenide, which ultimately determines the properties of the electrophysical parameters of the Au-GaAs contacts.

Place, publisher, year, edition, pages
Pleiades Publishing Ltd , 2023. Vol. 68, no 5, p. 566-574
National Category
Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-333794DOI: 10.1134/S1064226923050030ISI: 001022443400011Scopus ID: 2-s2.0-85163633436OAI: oai:DiVA.org:kth-333794DiVA, id: diva2:1787014
Note

QC 20230810

Available from: 2023-08-10 Created: 2023-08-10 Last updated: 2023-08-10Bibliographically approved

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Lyubchenko, Dmitri

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