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A CPW Probe to Rectangular Waveguide Transition for On-Wafer Micromachined Waveguide Characterization
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0001-5662-6748
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0002-8514-6863
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0002-7033-2452
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0002-8264-3231
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2024 (English)In: IEEE Transactions on Terahertz Science and Technology, ISSN 2156-342X, E-ISSN 2156-3446, Vol. 14, no 1, p. 98-108Article in journal (Refereed) Published
Abstract [en]

A new transition from coplanar waveguide probe to micromachined rectangular waveguide for on-wafer device characterization is presented in this article. The transition is fabricated in the same double H-plane split silicon micromachined waveguide technology as the devices under test, requiring no additional post-processing or assembly steps. We outline the design and fabrication process of the transition for the frequency band of 220–330 GHz. A coplanar waveguide structure acts as the probing interface, with an E-field probe protruding in the waveguide cavity exciting the fundamental waveguide mode. Guard structures around the E-field probe increase the aspect ratio during deep reactive ion etching and secure its geometry. A full equivalent circuit model is provided by analyzing its working principle. RF characterization of fabricated devices is performed for both single-ended and back-to-back configurations. Measured S-parameters of the single-ended transition are obtained by applying a two-tiered calibration and are analyzed using the equivalent circuit model. The insertion loss of the single-ended transition lies between 0.3 dB and 1.5 dB over the whole band, with the return loss in excess of 8 dB. In addition to previously reported characterization of a range of devices under test the viability of the transition for on-wafer device calibration is demonstrated by characterizing a straight waveguide line, achieving an insertion loss per unit length of 0.02–0.08 dB/mm in the frequency band of 220–330 GHz.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE) , 2024. Vol. 14, no 1, p. 98-108
Keywords [en]
Coplanar waveguide (CPW) probe, silicon micromachining, submillimeter wave, terahertz, transition, waveguide probe, waveguide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-342039DOI: 10.1109/tthz.2023.3332304Scopus ID: 2-s2.0-85177086769OAI: oai:DiVA.org:kth-342039DiVA, id: diva2:1825882
Funder
EU, European Research Council, 616846Swedish Foundation for Strategic Research, SE13-007
Note

QC 20240111

Available from: 2024-01-10 Created: 2024-01-10 Last updated: 2024-01-11Bibliographically approved

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Beuerle, BernhardCampion, JamesGlubokov, OleksandrShah, UmerOberhammer, Joachim

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