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Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electric Power and Energy Systems. State Key Laboratory of Electrical Insulation and Power Equipment, Xi′an Jiaotong University, Xi′an 710049, China.ORCID iD: 0000-0002-9405-0353
Hitachi Energy Research, 72178 Västerås, Sweden.
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2024 (English)In: Energies, E-ISSN 1996-1073, Vol. 17, no 2, p. 462-Article in journal (Refereed) Published
Abstract [en]

An increasing share of fluctuating and intermittent renewable energy sources can cause over-currents (OCs) in the power system. The heat generated during OCs increases the junction temperature of semiconductor devices and could even lead to thermal runaway if thermal limits are reached. In order to keep the junction temperature within the thermal limit of the semiconductor, the power module structure with heat-absorbing material below the chip is investigated through COMSOL Multiphysics simulations. The upper limits of the junction temperature for Silicon (Si) and Silicon Carbide (SiC) are assumed to be 175 and 250 ∘∘C, respectively. The heat-absorbing materials considered for analysis are a copper block and a copper block with phase change materials (PCMs). Two times, three times, and four times of OCs would be discussed for durations of a few hundred milliseconds and seconds. This article also discusses the thermal performance of a copper block and a copper block with PCMs. PCMs used for Si and SiC are LM108 and Lithium, respectively. It is concluded that the copper block just below the semiconductor chip would enable OC capability in Si and SiC devices and would be more convenient to manufacture as compared to the copper block with PCM.

Place, publisher, year, edition, pages
MDPI, 2024. Vol. 17, no 2, p. 462-
National Category
Energy Engineering
Research subject
Electrical Engineering
Identifiers
URN: urn:nbn:se:kth:diva-342424DOI: 10.3390/en17020462ISI: 001149106000001Scopus ID: 2-s2.0-85183326046OAI: oai:DiVA.org:kth-342424DiVA, id: diva2:1829167
Note

QC 20240209

Available from: 2024-01-18 Created: 2024-01-18 Last updated: 2024-02-09Bibliographically approved

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Bhadoria, ShubhangiNee, Hans-Peter

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