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A 220–260-GHz Silicon-Micromachined Waveguide MEMS Crossover Switch
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0001-5048-2296
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0002-8264-3231
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0009-0009-0687-9355
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0003-3339-9137
2024 (English)In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, p. 1-11Article in journal, Editorial material (Refereed) Published
Abstract [en]

This article presents a novel subterahertz (sub-THz) crossover waveguide switch concept operating in the 220–260-GHz frequency band. The crossover switching circuit is implemented by two hybrid couplers and two single-pole-single-throw (SPST) switching mechanisms, utilizing microelectromechanically reconfigurable switching surfaces. The silicon-micromachined crossover switch prototype is very compact, with a total footprint of 5.6 × 5 × 1.2 mm, including four standard WR-3.4 waveguide ports and the waveguide routing to these ports. The measured insertion loss (IL) is 0.9–1.4 dB in the crossover state and 0.8–1.3 dB in the straight state from 220 to 260 GHz, and the isolation (ISO) is better than 29.3 and 29 dB, respectively, for these states. The measured return loss (RL) is better than 14 dB in the crossover state and better than 13.6 dB in the straight state. Besides, the measured input-to-input ISO is better than 13.7 and 34 dB in the crossover and straight states, respectively. The measurement results are in excellent agreement with the simulation data. Moreover, the signal paths are fully symmetric for all input-to-output signal paths, making the crossover switching circuit suitable for redundancy applications.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE) , 2024. p. 1-11
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-344621DOI: 10.1109/tmtt.2024.3373870OAI: oai:DiVA.org:kth-344621DiVA, id: diva2:1846353
Note

QC 20240325

Available from: 2024-03-22 Created: 2024-03-22 Last updated: 2024-03-25Bibliographically approved

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Karimi, ArminShah, UmerYu, SuxianOberhammer, Joachim

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