In this paper we analyze GaAs grown by hydride vapor phase epitaxy (HVPE) and doped with four different iron concentrations between 4 X 10(16) and 4.5 X 10(20) cm(-3). From temperature dependent current-voltage measurements we observed the highest resistivity in the lowest doped sample. We also quantified the activation energy. These results together with those of time resolved photoluminescence measurements indicate that in the sample with the lowest Fe concentration, EL2 may be dominant. From the analysis of the time resolved photoluminescence measurements, the intrinsic EL2 concentration and the electron and hole capture cross sections of Fe in GaAs were estimated.