Transient electromagnetically induced transparency in InGaAs quantum dots 2008 (English)In: 2008 Conference On Lasers And Electro-Optics & Quantum Electronics And Laser Science Conference: Vols 1-9, 2008, p. 3597-3598Conference paper, Published paper (Refereed)

Abstract [en]

Electromagnetically induced transparency (EIT) based on exciton spin transitions is observed in InGaAs quantum dots. Inhomogeneous broadening of the quantum dot ensemble, detrimental for EIT, is effectively reduced by using spectrally narrow pulses.

Place, publisher, year, edition, pages

2008. p. 3597-3598

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Physical Sciences

Identifiers

URN: urn:nbn:se:kth:diva-38753DOI: 10.1109/QELS.2008.4553252ISI: 000260498401794Scopus ID: 2-s2.0-51349166645ISBN: 978-1-55752-859-9 (print)OAI: oai:DiVA.org:kth-38753DiVA, id: diva2:439268

Conference

Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008; San Jose, CA; 4 May 2008 through 9 May 2008

Available from: 2011-09-07 Created: 2011-08-31 Last updated: 2022-06-24Bibliographically approved

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Marcinkevicius, Saulius

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Microelectronics and Applied Physics, MAP

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