Carrier capture and relaxation in modulation doped InAs quantum dots 2005 (English)Conference paper, Published paper (Refereed)

Abstract [en]

Carrier dynamics in n and p-doped and undoped InAs/GaAs quantum dots were studied by time-resolved photoluminescence with selective excitation. Ultrafast carrier relaxation in doped dots is attributed to efficient carrier-carrier scattering.

Place, publisher, year, edition, pages

2005. p. 454-455

Series

IQEC, International Quantum Electronics Conference Proceedings ; Volume 2005

Keywords [en]

Carrier concentration, Photoluminescence, Semiconducting indium compounds, Ultrafast phenomena, Carrier carrier scattering, Time resolved photoluminescence, Ultrafast carrier relaxation, Semiconductor quantum dots

National Category

Electrical Engineering, Electronic Engineering, Information Engineering

Identifiers

URN: urn:nbn:se:kth:diva-157101DOI: 10.1109/IQEC.2005.1560909Scopus ID: 2-s2.0-33846539100ISBN: 078039240X (print)ISBN: 9780780392403 (print)OAI: oai:DiVA.org:kth-157101DiVA, id: diva2:771276

Conference

International Quantum Electronics Conference 2005; Tokyo; Japan

Note

QC 20141212

Available from: 2014-12-12 Created: 2014-12-05 Last updated: 2022-06-23Bibliographically approved

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Publisher's full textScopus

Authority records

Marcinkevičius, Saulius

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Marcinkevičius, SauliusSiegert, Jörg

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Microelectronics and Information Technology, IMITPhysics

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Electrical Engineering, Electronic Engineering, Information Engineering

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