Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Silicon Carbide BJT Oscillator Design Using S-Parameters
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0003-2540-8726
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits. Ascatron AB.ORCID iD: 0000-0002-7845-3988
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0003-0565-9907
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0001-6459-749X
Show others and affiliations
2018 (English)In: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018., 2018Conference paper, Poster (with or without abstract) (Refereed)
Abstract [en]

Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation isfurther aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, analternative small-signal, S-parameter based design method can be employed directly without goinginto complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 0C) was accessed by on-wafer probing and connectedby RF-cables to the rest of circuit passives, which were kept at room temperature (RT).

Place, publisher, year, edition, pages
2018.
Keywords [en]
RF oscillator, 4H-SiC BJT, S-parameters
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-249685OAI: oai:DiVA.org:kth-249685DiVA, id: diva2:1305535
Conference
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018.
Funder
Knut and Alice Wallenberg Foundation, 66167
Note

Accepted for publication in Materials Science Forum.

QC 20190507

Available from: 2019-04-17 Created: 2019-04-17 Last updated: 2019-05-07Bibliographically approved
In thesis
1. High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology
Open this publication in new window or tab >>High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology
2019 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

High-temperature electronics find many niche applications in downhole drilling, aviation, automotive and future exploration of inner planets like Venus and Mercury. Past studies have shown the potential of silicon carbide (SiC) electronics for catering these extreme temperature applications. In particular, analog, digital and mixed-signal integrated circuits, based on in-house SiC bipolar technology, have been shown to operate successfully for temperatures as high as 500 oC. This thesis aims at exploring the potential of in-house SiC bipolar technology for realizing high-temperature radio frequency (RF) circuits.

To that end, the in-house SiC bipolar junction transistors (BJTs) are first characterized up to 300 oC for RF figures of merit like unity current gain bandwidth and unity power gain bandwidth. The measurement results showed the feasibility of the current batch of SiC BJTs for developing RF circuits operating at low-end of very high frequency (VHF) band. Thereafter, three fundamental blocks of a high-temperature radio receiver, i.e. an intermediate-frequency amplifier, an oscillator and a down-conversion mixer were implemented. Firstly, an intermediate-frequency amplifier has been designed and measurement results demonstrated operation up to 251 oC. The proposed amplifier achieved a gain, input, and output matching of 16 dB, -7.5 dB and -11.2 dB, respectively, at 54.6 MHz and 251 oC. Next, 500 oC operation of an active down-conversion mixer has been exhibited. Measurements have shown that the conversion gain of the proposed mixer is 4.7 dB at 500 oC. Lastly, a negative resistance oscillator has been designed and tested successfully up to 400 oC. It has been shown that at 400 oC, the proposed oscillator delivers an output power of 8.4 dBm into a 50 Ω load.

In addition to SiC BJTs, the aforementioned circuits also employed spiral inductors implemented on PCBs, commercially available ceramic capacitors and thick-film resistors. Therefore, this thesis presents the evaluation of passives to assess their feasibility for high temperature operation. This work also identifies and addresses several challenges associated with the development flow of high-temperature RF circuits.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2019. p. viii-xix, 82
Series
TRITA-EECS-AVL ; 2019:40
Keywords
4H-SiC, active down-conversion mixer, BJT, EM simulations, silicon carbide, high-temperature, IF amplifier, LTCC, negative resistance oscillator, passives, RF circuits
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
urn:nbn:se:kth:diva-249972 (URN)978-91-7873-170-1 (ISBN)
Public defence
2019-05-29, Sal-C, Forum, Isafjordgatan 39, Kista, Stockholm, 13:00 (English)
Opponent
Supervisors
Funder
Knut and Alice Wallenberg Foundation, 66167
Note

QC 20190425

Available from: 2019-04-25 Created: 2019-04-24 Last updated: 2019-04-26Bibliographically approved

Open Access in DiVA

fulltext(424 kB)44 downloads
File information
File name FULLTEXT01.pdfFile size 424 kBChecksum SHA-512
613749a6056be9576e8715586e188814bb773283a8e34ef58201a47d1f39353f0aec037341d3493c48aa902c70320d09cd87c3a649f1d6f0959f710e917d6c02
Type fulltextMimetype application/pdf

Other links

Conference

Authority records BETA

Hussain, Muhammad WaqarElahipanah, HosseinRodriguez, SaulMalm, B. GunnarRusu, Ana

Search in DiVA

By author/editor
Hussain, Muhammad WaqarElahipanah, HosseinRodriguez, SaulMalm, B. GunnarRusu, Ana
By organisation
Integrated devices and circuits
Materials Engineering

Search outside of DiVA

GoogleGoogle Scholar
Total: 44 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

urn-nbn

Altmetric score

urn-nbn
Total: 224 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf