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Systematic Optimization of Boron Diffusion for Solar Cell Emitters
Vise andre og tillknytning
2017 (engelsk)Inngår i: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 46, nr 7, s. 4236-4241Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

To achieve p-n junctions for n-type solar cells, we have studied BBr3 diffusion in an open tube furnace, varying parameters of the BBr3 diffusion process such as temperature, gas flows, and duration of individual process steps, i.e., predeposition and drive-in. Then, output parameters such as carrier lifetime, sheet resistance, and diffusion profile were measured and statistically analyzed to optimize the emitter characteristics. Statistical analysis (factorial design) was finally employed to systematically explore the effects of the set of input variables on the outputs. The effect of the interactions between inputs was also evaluated for each output, quantified using a two-level factorial method. Temperature and BBr3 flow were found to have the most significant effect on different outputs such as carrier lifetime, junction depth, sheet resistance, and final surface concentration.

sted, utgiver, år, opplag, sider
Springer, 2017. Vol. 46, nr 7, s. 4236-4241
Emneord [en]
Silicon solar cells, boron diffusion, sheet resistance, lifetime, junction depth
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-210460DOI: 10.1007/s11664-017-5364-5ISI: 000403016800059Scopus ID: 2-s2.0-85013751239OAI: oai:DiVA.org:kth-210460DiVA, id: diva2:1120569
Merknad

QC 20170706

Tilgjengelig fra: 2017-07-06 Laget: 2017-07-06 Sist oppdatert: 2017-07-06bibliografisk kontrollert

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Radamson, Henry H.

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