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Scaling of 4H-SiC p-i-n photodiodes for high temperature applications
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
2017 (engelsk)Inngår i: 2017 75th Annual Device Research Conference (DRC), Institute of Electrical and Electronics Engineers (IEEE), 2017Konferansepaper (Fagfellevurdert)
Abstract [en]

Ultraviolet (UV) detection is important in astronomy, combustion detections and medical analysis. Solid-state UV detectors based on wide band gap semiconductors, such as 4H-SiC, are widely studied because of their excellent electrical properties [1]. 4H-SiC based UV detectors are solar blind and can be applied in extremely high temperature environments [2]. However, the state-of-art 4H-SiC photodetectors still have large sizes (>10000 μm2), which are not suitable to be integrated into high resolution UV photography sensors. To build a full-frame UV imaging sensor containing megapixels, photodiodes smaller than 20 μm by side are necessary. Here, we report the fabrication and characterization of 4H-SiC p-i-n photodiodes with mesa areas scaled from 40000 μm2 to 400 μm2. The relationships between the parameters and the areas of the photodiodes are discussed. The photodiodes are fully functional from room temperature (RT) to 500 °C.

sted, utgiver, år, opplag, sider
Institute of Electrical and Electronics Engineers (IEEE), 2017.
Serie
Device Research Conference - Conference Digest, DRC, ISSN 1548-3770
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-213521DOI: 10.1109/DRC.2017.7999445Scopus ID: 2-s2.0-85028060479ISBN: 9781509063277 (tryckt)OAI: oai:DiVA.org:kth-213521DiVA, id: diva2:1137839
Konferanse
75th Annual Device Research Conference, DRC 2017, University of Notre DameSouth Bend, United States, 25 June 2017 through 28 June 2017
Merknad

QC 20170901

Tilgjengelig fra: 2017-09-01 Laget: 2017-09-01 Sist oppdatert: 2017-09-01bibliografisk kontrollert

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Hou, ShuobenHellström, Per-ErikZetterling, Carl-MikaelÖstling, Mikael
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Totalt: 156 treff
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