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Smart Power Devices Nanotechnology
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
Vise andre og tillknytning
2017 (engelsk)Inngår i: Nanoelectronics: Materials, Devices, Applications, Wiley-VCH Verlagsgesellschaft, 2017, Vol. 1, s. 163-204Kapittel i bok, del av antologi (Fagfellevurdert)
Abstract [en]

The scope of this chapter is to present the state of the art of the available power devices, highlighting the main potential and limitation and indicating the path for the future materials and device technology that will be required to meet the request for a green energy world. Starting with a general introduction on the role of power electronics in nanoelectronics, a summary of the main advances in device technology will then be presented. Advanced new Si technologies, new power device based on silicon carbide (SiC), and gallium nitride (GaN) will be described in detail, highlighting the main potential and limitation of the different technologies. The main challenges for the availability of new materials and new substrates will also be discussed. These materials and substrates need to be available with very high quality and at low cost. This study will highlight the main issues, which are limiting the production of reliable devices in applications where, next to efficiency, reliability is also a must (automotive, satellite, etc.).

sted, utgiver, år, opplag, sider
Wiley-VCH Verlagsgesellschaft, 2017. Vol. 1, s. 163-204
Emneord [en]
High cell densities, Insulated gate bipolar technology, Integrated power devices, Metal oxide semiconductor ffield effect transistor, Power electronics technology, Renewable energy sources, Semiconductors technology
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-214642DOI: 10.1002/9783527800728.ch7Scopus ID: 2-s2.0-85028845707ISBN: 9783527800728 (tryckt)ISBN: 9783527340538 (tryckt)OAI: oai:DiVA.org:kth-214642DiVA, id: diva2:1142336
Merknad

QC 20170919

Tilgjengelig fra: 2017-09-19 Laget: 2017-09-19 Sist oppdatert: 2017-09-19bibliografisk kontrollert

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