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The impact of atomic layer depositions on high quality Ge/GeO2 interfaces fabricated by rapid thermal annealing in O-2 ambient
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik.ORCID-id: 0000-0001-6705-1660
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0002-5845-3032
2017 (engelsk)Inngår i: 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers (IEEE), 2017, s. 164-166, artikkel-id 7947553Konferansepaper (Fagfellevurdert)
Abstract [en]

This work demonstrates high quality Ge/GeO2 interfaces fabricated by O-2 RTA that are degraded by a good quality SiO2 layer deposited by ALD. However, neither O-3 and H2O precursors commonly used during subsequent high-k ALDs nor Si precursor AP-LTO-330 do not degrade the interface. Thus Dit increase after SiO2 deposition is likely due to intermixing. Therefore, the effect of subsequent ALDs on the interface quality has to be considered while designing Ge-based gate stacks.

sted, utgiver, år, opplag, sider
Institute of Electrical and Electronics Engineers (IEEE), 2017. s. 164-166, artikkel-id 7947553
Emneord [en]
Germanium, GeO2, high-k, ALD, D-it
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-214907ISI: 000409022100069Scopus ID: 2-s2.0-85021891351ISBN: 978-1-5090-4660-7 (tryckt)OAI: oai:DiVA.org:kth-214907DiVA, id: diva2:1151010
Konferanse
2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 28 February 2017 through 2 March 2017
Forskningsfinansiär
Swedish Foundation for Strategic Research
Merknad

QC 20171020

Tilgjengelig fra: 2017-10-20 Laget: 2017-10-20 Sist oppdatert: 2017-10-23bibliografisk kontrollert

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Hellström, Per-ErikÖstling, Mikael

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