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Interface between Al2O3 and 4H-SiC investigated by time-of-flight medium energy ion scattering
KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Materialfysik, MF.ORCID-id: 0000-0002-0292-224X
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0002-8760-1137
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT).
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2017 (engelsk)Inngår i: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 50, nr 49, artikkel-id 495111Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The formation of interfacial oxides during heat treatment of dielectric films on 4H-SiC has been studied. The 4H-SiC surface has been carefully prepared to create a clean and abrupt interface to Al2O3. An amorphous, 3 nm thick, Al2O3 film has been prepared on 4H-SiC by atomic layer deposition and rapid thermal annealing was then performed in N2O ambient at 700 degrees C and 1100 degrees C during 1 min. The samples were studied by time-of-flight medium energy ion scattering (ToF-MEIS), with sub-nanometer depth resolution and it is seen that, at both annealing temperatures, a thin SiOx (1 <= x <= 2) is formed at the interface. Our results further indicate that carbon remains in the silicon oxide in samples annealed at 700 degrees C. Additional electrical capacitance voltage measurements indicate that a large concentration of interface traps is formed at this temperature. After 1100 degrees C annealing, both MEIS and XRD measurements show that these features disappear, in accordance with electrical data.

sted, utgiver, år, opplag, sider
Institute of Physics Publishing (IOPP), 2017. Vol. 50, nr 49, artikkel-id 495111
Emneord [en]
ALD, ToF-MEIS, 4H-SiC, Al2O3, interface
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-219324DOI: 10.1088/1361-6463/aa9431ISI: 000415834100006Scopus ID: 2-s2.0-85039788159OAI: oai:DiVA.org:kth-219324DiVA, id: diva2:1162735
Forskningsfinansiär
Swedish Research Council, E0510501; D0674701
Merknad

QC 20171205

Tilgjengelig fra: 2017-12-05 Laget: 2017-12-05 Sist oppdatert: 2019-05-13bibliografisk kontrollert

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Linnarsson, Margareta K.Hallén, AndersKhartsev, SergiyUsman, Muhammad

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