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Scaling and modeling of high temperature 4H-SiC p-i-n photodiodes
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik.ORCID-id: 0000-0001-6705-1660
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik.ORCID-id: 0000-0001-8108-2631
KTH, Skolan för informations- och kommunikationsteknik (ICT).ORCID-id: 0000-0002-5845-3032
2018 (engelsk)Inngår i: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 6, nr 1, s. 139-145, artikkel-id 8240922Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

4H-SiC p-i-n photodiodes with various mesa areas (40,000μm2, 2500μm2, 1600μm2, and 400μm2) have been fabricated. Both C-V and I-V characteristics of the photodiodes have been measured at room temperature, 200 °C, 400 °C, and 500 °C. The capacitance and photo current (at 365 nm) of the photodiodes are directly proportional to the area. However, the dark current density increases as the device is scaled down due to the perimeter surface recombination effect. The photo to dark current ratio at the full depletion voltage of the intrinsic layer (-2.7 V) of the photodiode at 500 °C decreases 7 times as the size of the photodiode scales down 100 times. The static and dynamic behavior of the photodiodes are modeled with SPICE parameters at the four temperatures.

sted, utgiver, år, opplag, sider
Institute of Electrical and Electronics Engineers Inc. , 2018. Vol. 6, nr 1, s. 139-145, artikkel-id 8240922
Emneord [en]
4H-SiC, high temperature, photodiode, scaling, Capacitance, Photodiodes, Silicon carbide, Dark current ratio, Full-depletion voltage, IV characteristics, Static and dynamic behaviors, Surface recombinations, Silicon compounds
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-223196DOI: 10.1109/JEDS.2017.2785618ISI: 000423582900022Scopus ID: 2-s2.0-85040046747OAI: oai:DiVA.org:kth-223196DiVA, id: diva2:1186293
Forskningsfinansiär
Knut and Alice Wallenberg Foundation
Merknad

Export Date: 13 February 2018; Article; Correspondence Address: Hou, S.; School of Information and Communication Technology, KTH Royal Institute of TechnologySweden; email: shuoben@kth.se; Funding details: Knut och Alice Wallenbergs Stiftelse; Funding details: KTH, Kungliga Tekniska Högskolan. QC 20180228

Tilgjengelig fra: 2018-02-28 Laget: 2018-02-28 Sist oppdatert: 2019-04-10bibliografisk kontrollert
Inngår i avhandling
1. Silicon Carbide High Temperature Photodetectors and Image Sensor
Åpne denne publikasjonen i ny fane eller vindu >>Silicon Carbide High Temperature Photodetectors and Image Sensor
2019 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. Driven by the objective of probing the high temperature surface of Venus (460 °C), this thesis develops SiC photodetectors and an image sensor for extremely high temperature functions. The devices and circuits are demonstrated through the procedure of layout design, in-house processing and characterizations on two batches.

The process flow has been optimized to be suitable for large scale integration (LSI) of SiC bipolar integrated circuits (IC). The improved processing steps are SiC dry etching, ohmic contacts and two-level metal interconnect with chemical-mechanical polishing (CMP). The optimized process flow is applied in the fabrication of discrete devices, a transistor-transistor logic (TTL) process design kit (PDK) and LSI circuits.

The photodetectors developed in this thesis, including photodiodes with various mesa areas, a phototransistor and a phototransistor Darlington pair have stable characteristics in a wide temperature range (25 °C ~ 500 °C). The maximum operational temperature of the p-i-n photodiode (550 °C) is the highest recorded temperature accomplished ever by a photodiode. The optical responsivity of the photodetectors covers the spectrum from 220 nm to 380 nm, which is UV-only.

The SiC pixel sensor and image sensor developed in this thesis are pioneer works. The pixel sensor overcomes the challenge of monolithic integration of SiC photodiode and transistors by sharing the same epitaxial layers and topside contacts. The pixel sensor is characterized from 25 °C to 500 °C. The whole image sensor circuit has 256 (16 ×16) pixel sensors and one 8-bit counter together with two 4-to-16 decoders for row/column selection. The digital circuits are built by the standard logic gates selected from the TTL PDK. The image sensor has 1959 transistors in total. The function of the image sensor up to 400 °C is verified by taking basic photos of nonuniform UV illumination on the pixel sensor array.

This thesis makes an important attempt on the demonstration of SiC opto-electronic on-chip integration. The results lay a foundation on the development of future high temperature high resolution UV image sensors.

sted, utgiver, år, opplag, sider
KTH Royal Institute of Technology, 2019. s. 81
Serie
TRITA-EECS-AVL ; 2019:37
Emneord
Silicon Carbide (SiC), high temperature, photodetector, photodiode, phototransistor, ultraviolet (UV), transistor-transistor logic (TTL), bipolar junction transistor (BJT), integrated circuit (IC), pixel sensor, image sensor
HSV kategori
Forskningsprogram
Informations- och kommunikationsteknik
Identifikatorer
urn:nbn:se:kth:diva-248426 (URN)978-91-7873-160-2 (ISBN)
Disputas
2019-05-03, Ka-Sal B (Sal Peter Weissglas), Kistagången 16, Kista, 10:00 (engelsk)
Opponent
Veileder
Forskningsfinansiär
Knut and Alice Wallenberg Foundation, Working on VenusSwedish Foundation for Strategic Research , CMP Lab
Merknad

QC 20190411

Tilgjengelig fra: 2019-04-11 Laget: 2019-04-09 Sist oppdatert: 2019-04-11bibliografisk kontrollert

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Hou, ShuobenHellström, Per-ErikZetterling, Carl-MikaelÖstling, Mikael

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