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500 °c, High Current Linear Voltage Regulator in 4H-SiC BJT Technology
KTH, Skolan för informations- och kommunikationsteknik (ICT).
KTH, Skolan för informations- och kommunikationsteknik (ICT).
KTH, Skolan för informations- och kommunikationsteknik (ICT).ORCID-id: 0000-0001-8108-2631
2018 (engelsk)Inngår i: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, nr 4, s. 548-551Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

This letter reports on a fully integrated 2-linear voltage regulator operational in a wide temperature range from 25 °C up to 500 °C fabricated in 4H-SiC technology. The circuit provides a stable output voltage with less than 1% variation in the entire temperature range. This letter demonstrates the first power supply solution providing both high-temperature (up to 500 °C) and high-load driving capabilities (up to 2).

sted, utgiver, år, opplag, sider
Institute of Electrical and Electronics Engineers (IEEE), 2018. Vol. 39, nr 4, s. 548-551
Emneord [en]
Bipolar junction transistor (BJT), high-temperature IC, linear voltage regulator (LVR), silicon carbide (SiC)
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-227638DOI: 10.1109/LED.2018.2805229ISI: 000428689000022Scopus ID: 2-s2.0-85041829681OAI: oai:DiVA.org:kth-227638DiVA, id: diva2:1205520
Forskningsfinansiär
Swedish Foundation for Strategic Research Knut and Alice Wallenberg Foundation
Merknad

QC 20180514

Tilgjengelig fra: 2018-05-14 Laget: 2018-05-14 Sist oppdatert: 2018-05-14bibliografisk kontrollert

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Elahipanah, HosseinRodriguez, SaulZetterling, Carl-Mikael

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