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Silicon Carbide BJT Oscillator Design Using S-Parameters
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0003-2540-8726
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektronik, Integrerade komponenter och kretsar. Ascatron AB.ORCID-id: 0000-0002-7845-3988
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0003-0565-9907
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0001-6459-749X
Vise andre og tillknytning
2018 (engelsk)Inngår i: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018., 2018Konferansepaper, Poster (with or without abstract) (Fagfellevurdert)
Abstract [en]

Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation isfurther aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, analternative small-signal, S-parameter based design method can be employed directly without goinginto complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 0C) was accessed by on-wafer probing and connectedby RF-cables to the rest of circuit passives, which were kept at room temperature (RT).

sted, utgiver, år, opplag, sider
2018.
Emneord [en]
RF oscillator, 4H-SiC BJT, S-parameters
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-249685OAI: oai:DiVA.org:kth-249685DiVA, id: diva2:1305535
Konferanse
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018.
Forskningsfinansiär
Knut and Alice Wallenberg Foundation, 66167
Merknad

Accepted for publication in Materials Science Forum.

QC 20190507

Tilgjengelig fra: 2019-04-17 Laget: 2019-04-17 Sist oppdatert: 2019-05-07bibliografisk kontrollert
Inngår i avhandling
1. High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology
Åpne denne publikasjonen i ny fane eller vindu >>High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology
2019 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

High-temperature electronics find many niche applications in downhole drilling, aviation, automotive and future exploration of inner planets like Venus and Mercury. Past studies have shown the potential of silicon carbide (SiC) electronics for catering these extreme temperature applications. In particular, analog, digital and mixed-signal integrated circuits, based on in-house SiC bipolar technology, have been shown to operate successfully for temperatures as high as 500 oC. This thesis aims at exploring the potential of in-house SiC bipolar technology for realizing high-temperature radio frequency (RF) circuits.

To that end, the in-house SiC bipolar junction transistors (BJTs) are first characterized up to 300 oC for RF figures of merit like unity current gain bandwidth and unity power gain bandwidth. The measurement results showed the feasibility of the current batch of SiC BJTs for developing RF circuits operating at low-end of very high frequency (VHF) band. Thereafter, three fundamental blocks of a high-temperature radio receiver, i.e. an intermediate-frequency amplifier, an oscillator and a down-conversion mixer were implemented. Firstly, an intermediate-frequency amplifier has been designed and measurement results demonstrated operation up to 251 oC. The proposed amplifier achieved a gain, input, and output matching of 16 dB, -7.5 dB and -11.2 dB, respectively, at 54.6 MHz and 251 oC. Next, 500 oC operation of an active down-conversion mixer has been exhibited. Measurements have shown that the conversion gain of the proposed mixer is 4.7 dB at 500 oC. Lastly, a negative resistance oscillator has been designed and tested successfully up to 400 oC. It has been shown that at 400 oC, the proposed oscillator delivers an output power of 8.4 dBm into a 50 Ω load.

In addition to SiC BJTs, the aforementioned circuits also employed spiral inductors implemented on PCBs, commercially available ceramic capacitors and thick-film resistors. Therefore, this thesis presents the evaluation of passives to assess their feasibility for high temperature operation. This work also identifies and addresses several challenges associated with the development flow of high-temperature RF circuits.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2019. s. viii-xix, 82
Serie
TRITA-EECS-AVL ; 2019:40
Emneord
4H-SiC, active down-conversion mixer, BJT, EM simulations, silicon carbide, high-temperature, IF amplifier, LTCC, negative resistance oscillator, passives, RF circuits
HSV kategori
Forskningsprogram
Informations- och kommunikationsteknik
Identifikatorer
urn:nbn:se:kth:diva-249972 (URN)978-91-7873-170-1 (ISBN)
Disputas
2019-05-29, Sal-C, Forum, Isafjordgatan 39, Kista, Stockholm, 13:00 (engelsk)
Opponent
Veileder
Forskningsfinansiär
Knut and Alice Wallenberg Foundation, 66167
Merknad

QC 20190425

Tilgjengelig fra: 2019-04-25 Laget: 2019-04-24 Sist oppdatert: 2019-04-26bibliografisk kontrollert

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