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Utilizing the superior etch stop quality of HfO 2 in the front end of line wafer scale integration of silicon nanowire biosensors
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektronik.ORCID-id: 0000-0001-9690-2292
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektronik.ORCID-id: 0000-0001-6705-1660
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektronik.ORCID-id: 0000-0002-5845-3032
2019 (engelsk)Inngår i: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 212, s. 13-20Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Silicon nanowire (SiNW) biosensors have received a special attention from the research community due to its ability to detect a range of species. The nano feature size of the SiNW has been exploited to fabricate small, low-cost, robust, portable, real-time read-out biosensors. These sensors are manufactured by two methods – top-down or bottom-up. Instead of the bottom-up method, the top-down approach is widely used due to its compatibility with complementary metal-oxide semiconductor (CMOS) process and scope of mass production. However, in the top-down method, the post fabrication microfluidic channel integration to access the SiNW test site remains complex and challenging. Since the nanosensor is expected to operate in a bio environment, it is essential to passivate the metal electrodes while pathways have to be made to access the test site. In this paper, we present a relatively easier method to access the SiNW test site without employing complex microfluidic channels while achieving leakage free passivation of metal electrodes and preserving the integrity of the nanosensor. This is accomplished in the last step of the manufacturing process by employing a lithography mask and reactive ion etching (RIE). HfO 2 integrated crystalline silicon nanosensors are manufactured using novel top-down front end of line (FEOL) sidewall transfer lithography (STL) process. HfO 2 acts as an etch stop layer while performing RIE in the last step to access the sensor test site. The 100 mm wafer scale results of 20 nm × 60 nm × 6 μm (H x W x L) p-type nanosensors shows an average I on /I off ≥ 10 5 with maximum turn-on voltage of −4 V and uniform subthreshold slope of 70 mV/dec. In comparison with sensors encapsulated with SiO 2 , the HfO 2 integrated nanosensors were found to improve the threshold voltage variation by 50%. Based on this work, the HfO 2 integrated SiNW demonstrates good stability for biosensing application.

sted, utgiver, år, opplag, sider
Elsevier B.V. , 2019. Vol. 212, s. 13-20
Emneord [en]
Biosensor, CMOS compatible, FEOL, HfO 2, LOC, Silicon nanowire access, Biosensors, CMOS integrated circuits, Electrodes, Fluidic devices, Hafnium oxides, Lithography, Metals, Microfluidics, MOS devices, Nanosensors, Nanowires, Oxide semiconductors, Reactive ion etching, Silica, Silicon oxides, Silicon wafers, Threshold voltage, WSI circuits, Biosensing applications, Complementary metal oxide semiconductor process, HfO2, Manufacturing process, Silicon nanowires, Threshold voltage variation, Nitrogen compounds
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Identifikatorer
URN: urn:nbn:se:kth:diva-252476DOI: 10.1016/j.mee.2019.03.006ISI: 000468708700003Scopus ID: 2-s2.0-85063917094OAI: oai:DiVA.org:kth-252476DiVA, id: diva2:1337444
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QC 20190715

Tilgjengelig fra: 2019-07-15 Laget: 2019-07-15 Sist oppdatert: 2019-07-15bibliografisk kontrollert

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Jayakumar, GaneshHellström, Per-ErikÖstling, Mikael

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