Greatly enhanced hole collection of MoOx is demonstrated experimentally with a top sub-10 nm thick Ag film, allowing for an efficient dopant-free contacted crystalline silicon (c-Si) heterojunction solar cell without a front grid electrode. With the removal of shadows induced by the front grid electrode, the gridless solar cell with the MoOx/Ag hole-selective contact (HSC) shows an increment of similar to 8% in its power conversion efficiency (PCE) due to the greatly improved short-circuit current density (J(sc)) as well as the almost undiminished fill factor (FF) and open-circuit voltage (V-oc), while the gridless solar cells with the conventional MoOx/ITO and pure MoOx HSCs exhibit similar to 20% and similar to 43% degradations in PCE due to the overwhelming decrease in their FF and J(sc), respectively. Through systematic characterizations and analyses, it is found that the ultrathin Ag film (more conductive than ITO) provides an additional channel for photogenerated holes to transport on MoOx, contributing to the great enhancement in the hole collection and the great suppression of the shunt loss in the gridless solar cells. A 50 mu m thick gridless c-Si heterojunction solar cell with the MoOx/Ag HSC is 75% thinner but is 86% efficient compared to its 200 mu m thick counterpart (while the 50 mu m thick gridless solar cell with the MoOx/ITO HSC is much less efficient). It is over 82% efficient after being bent to a curvature radius as small as 4 mm, also showing superior mechanical flexibility to its counterpart with the MoOx/ITO HSC. Our MoOx/Ag double-layer HSC can be easily fabricated through thermal evaporation without breaking the vacuum, saving both the time and cost of the fabrication of the whole device. Therefore, this work provides a guide for the design of efficient HSCs for high-efficiency, low-cost, and flexible solar cells.