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Electrically active point defects in n-type 4H–SiC
KTH, Tidigare Institutioner, Elektronik.
KTH, Tidigare Institutioner, Elektronik.ORCID-id: 0000-0002-0292-224X
KTH, Tidigare Institutioner, Elektronik.
KTH, Tidigare Institutioner, Elektronik.
Vise andre og tillknytning
1998 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 84, nr 3, s. 61-68Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers of 4H–SiC grown by vapor phase epitaxy with a concentration of approximately 1×1013 cm−3. Secondary ion mass spectrometry revealed no evidence of the transition metals Ti, V, and Cr. Furthermore, after electron irradiation with 2 MeV electrons, the 0.70 eV level is not observed to increase in concentration although three new levels are observed at approximately 0.32, 0.62, and 0.68 eV below Ec with extrapolated capture cross sections of 4×10−14, 4×10−14, and 5×10−15 cm2, respectively. However, the defects causing these levels are unstable and decay after a period of time at room temperature, resulting in the formation of the 0.70 eV level. Our results suggest strongly that the 0.70 eV level originates from a defect of intrinsic nature. The unstable behavior of the electron irradiation-induced defects at room temperature has not been observed in the 6H–SiC polytype.

sted, utgiver, år, opplag, sider
1998. Vol. 84, nr 3, s. 61-68
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-13025DOI: 10.1063/1.368247OAI: oai:DiVA.org:kth-13025DiVA, id: diva2:320276
Merknad

QC 20100524

Tilgjengelig fra: 2010-05-24 Laget: 2010-05-24 Sist oppdatert: 2017-12-12bibliografisk kontrollert
Inngår i avhandling
1. Compound semiconductors: defects and relocation of atoms during growth sputtering and diffusion
Åpne denne publikasjonen i ny fane eller vindu >>Compound semiconductors: defects and relocation of atoms during growth sputtering and diffusion
1997 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
sted, utgiver, år, opplag, sider
Stockholm: KTH, 1997. s. viii, 48
Serie
Trita-FTE, ISSN 0284-0545 ; 1997:10
Emneord
secondary ion mass spectrometry (SIMS), cascade mixing, redistribution, diffusion, defects, passivation, SiC, A1xGa1-xAs
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-2545 (URN)99-2452010-6 (ISBN)
Disputas
1997-09-08, 00:00 (engelsk)
Merknad
QC 20100524Tilgjengelig fra: 2000-01-01 Laget: 2000-01-01 Sist oppdatert: 2010-05-24bibliografisk kontrollert

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