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Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire
KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Electrumlaboratoriet, ELAB.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Electrumlaboratoriet, ELAB.ORCID-id: 0000-0002-0977-2598
KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Electrumlaboratoriet, ELAB.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Electrumlaboratoriet, ELAB.
Vise andre og tillknytning
2006 (engelsk)Inngår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, nr 2, s. 705-707Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We have developed a virtual GaN substrate on sapphire based on a two-step growth method. By optimizing the growth scheme for the virtual substrate we have improved crystal quality and reduced interface roughness. Our Al0.22Ga0.78N/GaN HEMT structure grown on the optimized semi-insulating GaN virtual substrate, exhibits Hall mobilities as high as 1720 and 7350 cm(2)/Vs and sheet carrier concentrations of 8.4 x 1012 and 10.0 x 1012 cm(-2) at 300 K and 20 K, respectively The presence of good AlGaN/GaN interface quality and surface morphology is also substantiated by X-Ray reflectivity and Atomic Force Microscopy measurements. A simplified transport model is used to fit the experimental Hall mobility.

sted, utgiver, år, opplag, sider
2006. Vol. 515, nr 2, s. 705-707
Emneord [en]
MOVPE, HEMT, scattering, interface roughness, X-ray reflectivity, dislocations, CHEMICAL-VAPOR-DEPOSITION, GAN, HETEROSTRUCTURES
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-13646DOI: 10.1016/j.tsf.2006.04.052ISI: 000241220600078Scopus ID: 2-s2.0-33748909151OAI: oai:DiVA.org:kth-13646DiVA, id: diva2:326308
Merknad
QC 20100622Tilgjengelig fra: 2010-06-22 Laget: 2010-06-22 Sist oppdatert: 2017-12-12bibliografisk kontrollert
Inngår i avhandling
1. Gallium nitride templates and its related materials for electronic and photonic devices
Åpne denne publikasjonen i ny fane eller vindu >>Gallium nitride templates and its related materials for electronic and photonic devices
2008 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

 

sted, utgiver, år, opplag, sider
Stockholm: KTH, 2008. s. xiv, 89
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:8
Emneord
GaN, heteroepitaxy of GaN, BGaAlN, Fe doped GaN, HEMT, carrier capture cross section, intersubband transition modulator
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-4759 (URN)978-91-7178-981-5 (ISBN)
Disputas
2008-06-05, N2, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:15
Opponent
Veileder
Merknad
QC 20100623Tilgjengelig fra: 2008-05-16 Laget: 2008-05-16 Sist oppdatert: 2010-09-20bibliografisk kontrollert

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